Semiconductor device and method for forming the same

1. A method of forming a semiconductor device, comprising:

forming a semiconductor fin extending upwardly from a substrate;

forming a gate structure extending across the semiconductor fin;

forming a source structure and a drain structure on the semiconductor fin and on opposite sides of the gate structure in a plan view;

forming a source contact landing on the source structure and a drain contact landing on the drain structure;

forming a source via landing on the source contact and a drain via landing on the drain contact; and

after forming the source and drain vias, forming a first metal line in contact with the drain via, wherein the source contact has a length extending past a first longitudinal side of the first metal line.

2. The method of claim 1 , wherein forming the source and drain contacts is performed such that in the plan view, the length of the source contact is greater than a maximal dimension of the drain contact.

3. The method of claim 1 , wherein forming the source and drain contacts is performed such that in the plan view, the source contact forms a rectangular pattern and the drain contact forms a first circular pattern.

4. The method of claim 3 , wherein forming the drain via is performed such that in the plan view, the drain via forms a second circular pattern, the first circular pattern of the drain contact enclosing the second circular pattern of the drain via.

5. The method of claim 1 , wherein the length of the source contact further extends past a second longitudinal side of the first metal line opposite to the first longitudinal side.

6. The method of claim 1 , further comprising:

after forming the source and drain vias, forming a second metal line landing on the source via, wherein the drain contact non-overlaps the second metal line.

7. The method of claim 1 , wherein the source via non-overlaps the semiconductor fin.

8. The method of claim 1 , wherein the drain via overlaps the semiconductor fin.

9. A method of forming a semiconductor device, comprising:

forming a semiconductor fin extending upwardly from a substrate;

forming a gate structure extending across the semiconductor fin;

forming a source structure on the semiconductor fin;

forming a drain structure on the semiconductor fin, wherein the source and drain structures are respectively on opposite sides of the gate structure in a plan view; and

forming a source contact landing on the source structure and having a rectangular pattern in the plan view, and a drain contact landing on the drain structure and having a circular pattern in the plan view, wherein the rectangular pattern of the source contact has a length greater than a longest dimension of the circular pattern of the drain contact.

10. The method of claim 9 , further comprising:

forming a source via landing on the source contact, wherein in the plan view, the source via non-overlaps the semiconductor fin.

11. The method of claim 10 , further comprising:

forming a metal line in contact with the source via and extending along a lengthwise direction of the semiconductor fin, wherein in the plan view, the metal line non-overlaps the semiconductor fin.

12. The method of claim 10 , further comprising:

forming a metal line in contact with the source via and extending along a lengthwise direction of the semiconductor fin, wherein in the plan view, the gate structure overlaps a first longitudinal side of the metal line and non-overlaps a second longitudinal side of the metal line opposite to the first longitudinal side.

13. The method of claim 9 , further comprising:

forming a drain via landing on the drain contact and a metal line in contact with the drain via and extending along a lengthwise direction of the semiconductor fin, wherein the source contact extends past a first longitudinal side of the metal line.

14. The method of claim 13 , wherein the source contact further extends past a second longitudinal side of the metal line opposite to the first longitudinal side.

15. The method of claim 13 , wherein the drain via overlaps the semiconductor fin.

16. A method of forming a semiconductor device, comprising:

forming a semiconductor fin extending upwardly from a substrate;

forming a gate structure extending across the semiconductor fin;

forming a source structure on the semiconductor fin, and a drain structure on the semiconductor fin, wherein the source and drain structures are respectively on opposite sides of the gate structure in a plan view;

forming a source contact landing on the source structure; and

forming a metal line having a length extending along a lengthwise direction of the semiconductor fin and overlapping the semiconductor fin, wherein the source contact having a length extends past opposite longitudinal sides of the metal line along a lengthwise direction of the gate structure in the plan view.

17. The method of claim 16 , wherein in the plan view, source contact has a rectangular pattern.

18. The method of claim 16 , further comprising:

forming a drain contact landing on the drain structure, wherein in the plan view, the length of the source contact is greater than a dimension of the drain contact along the lengthwise direction of the gate structure.

19. The method of claim 18 , further comprising:

forming a drain via on the drain contact, wherein the metal line lands on the drain via.

20. The method of claim 16 , further comprising:

forming a drain contact landing on the drain structure, wherein in the plan view, the source contact has a greater profile area than the drain contact.