Process of making components for electronic and optical devices using laser processing
The present invention relates to processes of making components for electronic and optical devices using laser processing and devices comprising such components. Such process uses a laser to introduce chemical and/or structural changes in substrates and films that are the raw materials from which components for electronic and optical devices are made. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized.
1 . A process of making an electrical component, an optical component, or a combined electrical and optical component, said process comprising:
pattern illumination-based annealing at a intensity and for a time, at least one material that comprises, prior to said annealing, two or more regions that are amorphous, nanocrystalline, microcrystalline or crystalline with the proviso that at least two of said regions are not identical with respect being amorphous, nanocrystalline, microcrystalline or crystalline, said at least one material comprising a transition metal and an element selected from the group consisting of hydrogen, carbon, nitrogen, oxygen, sulfur, selenium, phosphorous and mixtures thereof, using a laser or lamp, to form on, within or on and within said material:
(i) at least two electronic elements selected from a conductor, semiconductor and an insulator;
(ii) two or more different conductors having at least one of the following: different electrical properties or different optical properties;
(iii) two or more different semiconductors having at least one of the following: different electrical properties or different optical properties; or
(iv) two or more different insulators having at least one of the following: different electrical properties or different optical properties;
said process being performed under one of the following conditions: vacuum of less than 100 torr, air, or under a fluid blanket other than air;
said pattern illumination-based annealing resulting in at least one of a chemical change or structural change in at least one of said materials that results in an electrical component, an optical component or a combined electrical and optical component being created to form on, within or on and within said material.
2 . The process of claim 1 wherein said at least one material is a single material.
3 . The process of claim 1 wherein said transition metal is selected from the group consisting of: molybdenum, tungsten, niobium, tantalum, vanadium, titanium, chromium, iron, rhodium, hafnium, rhenium, and mixtures thereof.
4 . The process of claim 1 wherein said process is performed only under atmospheric air.
5 . The process of claim 1 wherein said process is performed under a fluid blanket other than air, and said fluid blanket comprises:
a) an element selected from the group consisting of krypton, xenon, radon, argon, neon, helium, hydrogen, carbon, nitrogen, oxygen, sulfur, selenium, phosphorous and mixtures thereof;
b) based on total fluid volume greater than 0% to about 19% or from 21% to 100% oxygen; and/or
c) greater than 0% to about 78% or from 80% to 100% nitrogen.
6 . A process according to claim 1 wherein said two or more regions are nanocrystalline, microcrystalline, or crystalline.
7 . A process according to claim 1 wherein said pattern illumination-based annealing is achieved by using a laser to subject said material for a time of about 1 femtosecond to 60 seconds, said laser having power of from about 1 W/cm 2 to about 1×10 15 W/cm 2 over said time of about 1 femtosecond to 60 seconds.
8 . A process according to claim 1 wherein said pattern illumination-based annealing is achieved by using a continuous wave laser to subject said material for a time of about 0.1 milliseconds to 60 seconds to said laser, said laser having power of from about 1 W/cm 2 to about 1×10 8 W/cm 2 over said time of about 0.1 milliseconds to 60 seconds.
9 . A process according to claim 1 wherein said pattern illumination-based annealing is achieved by using a continuous wave laser to subject said material for a time of about 1 femtosecond to 60 seconds to said laser, said laser having power of from about 1×10 8 W/cm 2 to about 1×10 16 W/cm 2 over said time of about 1 femtosecond to 60 seconds.
10 . The process of claim 1 wherein, said material comprises a film having a thickness of from about 0.1 nanometers to about 1 centimeter.
11 . The process of claim 1 wherein, said material comprises a film having a thickness of from about 0.3 nanometers to about 10 micrometers.
12 . The process of claim 1 wherein, said electrical and/or optical component is selected from the group consisting of an inductor, a capacitor, a resistor, a diode, a transistor, a trace, a battery, an optical filter, and a solar cell.
13 . A process of making electrical device, an optical device or a combined electrical and optical device, said process comprising combining:
a) two or more electrical, an optical or a combined electrical and optical components produced according to the process of claim 1 ; or
b) at least one electrical, optical or combined electrical and optical component produced according to the process of claim 1 , and one or more additional electrical, optical or combined electrical and optical components, said one or more additional electrical, optical or combined electrical and optical components are not produced according to the processes of claim 1 .
14 . An electrical device, an optical device or a combined electrical and optical device:
a) on, within or on and within at least one material that comprises two or more regions that are amorphous, nanocrystalline, microcrystalline or crystalline with the proviso that at least two of said regions are not identical with respect being amorphous, nanocrystalline, microcrystalline or crystalline, said at least one material comprising a transition metal and an element selected from the group consisting of hydrogen, carbon, nitrogen, oxygen, sulfur, selenium, phosphorous and mixtures thereof; or
b) on, within or on and within at least one material that comprises at least one region that is amorphous, nanocrystalline, microcrystalline or crystalline, said at least one material comprising a transition metal and an element selected from the group consisting of hydrogen, carbon, nitrogen, oxygen, sulfur, selenium, phosphorous and mixtures thereof;
said electrical device, an optical device or a combined electrical and optical device being produced according to the process of claim 1 .
15 . The process of claim 1 wherein said pattern illumination-based annealing results in a chemical change in at least one of said materials that results in an electrical component, an optical component or a combined electrical and optical component being created to form on, or within said material.
16 . The process of claim 2 wherein said single material is a single substrate or film, and said process provides multiple functions that are integrated on, within, or on and within said single substrate or film.
17 . The process of claim 1 wherein said pattern illumination-based annealing results in a change in the molecular composition in a region of at least one of said materials that results in an electrical component, an optical component or a combined electrical and optical component being formed on, within or on and within said material.
18 . The process of claim 17 wherein the transition metal is Mo, and the element is oxygen, and the process forms different oxide phases MoO 2 and MoO 3 on, within, or on and within said material.