Thin film structure and semiconductor device comprising the same
A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.
1. A thin film structure comprising:
a substrate; and
a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which a <112> crystal orientation is aligned in a direction normal to a surface of the substrate, the material layer comprising a material expressed by MO 2 X 8 (where M is Hf, Zr or combinations of Hf and Zr, and X is an element selected from the group including O, N, and H, and 0≤δ≤1), the material layer having a ratio of the element X inside the material layer different from a ratio of the element X in one or more surface layers of the material layer.
2. The thin film structure of claim 1 ,
wherein the material layer comprises the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.
3. The thin film structure of claim 1 ,
wherein the material layer comprises at least 20% of the crystals of which the <112> crystal orientation is aligned in the direction among all crystals of the material layer.
4. The thin film structure of claim 1 ,
wherein the material layer has ferroelectricity.
5. The thin film structure of claim 1 ,
wherein the material layer comprises a material expressed by MO 2 X 8 (where M is Hf, Zr or combinations of Hf and Zr, X is an element selected from the group including O, N, and H, and 0≤δ≤1) as a base material, and the material layer further comprises one or more dopant materials selected from the group including of C, Si, Ge, Sn, Pb, Al, Y, La, Gd, Mg, Ca, Sr, Ba, or Ti.
6. The thin film structure of claim 5 ,
wherein the material layer comprises a content of the one or more dopant materials greater than 0 at % and less than or equal to 20 at % compared to a metal element of the base material.
7. The thin film structure of claim 1 ,
wherein the material layer comprises a material expressed by MO 2 X δ (where M is Hf, Zr or combinations of Hf and Zr, and X is an element selected from the group including O, N, and H, and δ>0).
8. The thin film structure of claim 1 ,
wherein the ratio of the element X in the one or more surface layers of the material sface-layers. layer is greater than or equal to 0.
9. The thin film structure of claim 1 ,
wherein the one or more surface layers of the material layer comprises a material expressed in MO 2 X δ2 (where M is Hf, Zr, or combinations of Hf and Zr, X is an element selected from the group including O, N, and H, and 0.1 ≤δ 2 ≤0.95).
10. The thin film structure of claim 1 ,
wherein the material layer has a thickness of between 0.1 nm or more and 10 nm or less.
11. The thin film structure of claim 1 ,
wherein the material layer has a thickness greater than or equal to 0.1 nm and less than or equal to 5 nm.
12. A semiconductor device comprising the thin film structure of claim 1 .
13. The semiconductor device of claim 12 , further comprising:
a first electrode; and
a second electrode apart from the first electrode,
wherein the material layer is between the first electrode and the second electrode, and
at least one of the first electrode or the second electrode corresponds to the substrate.
14. The semiconductor device of claim 13 , further comprising:
a paraelectric material layer.
15. The semiconductor device of claim 14 ,
wherein the paraelectric material layer is between the material layer and the substrate.
16. The semiconductor device of claim 15 ,
wherein the paraelectric material layer comprises one or more materials selected from the group including aluminum oxide (Al 2 O 3 ), lanthanum oxide (La 2 O 3 ), yttrium oxide (Y 2 O 3 ), and silicon oxide (SiO 2 ).
17. The semiconductor device of claim 13 ,
wherein one of the first electrode or the second electrode comprises a semiconductor material.
18. The semiconductor device of claim 17 ,
wherein the one of the first electrode or the second electrode comprising the semiconductor material comprises a source and a drain.
19. A semiconductor circuitry comprising:
the semiconductor device of claim 12 ; and
at least one other circuit.
20. The thin film structure of claim 1 ,
wherein the ratio of the element X inside the material layer is smaller than the ratio of the element X in the one or more surface layers of the material layer.