Sensors based on negative capacitance field effect transistors
Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.
1. A chemical sensor, comprising:
a semiconductor substrate having an input terminal and an output terminal;
a negative capacitance structure positioned on the semiconductor substrate, configured to control a current passing from the input terminal to the output terminal, comprising a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers; and
a functionalized electrode in electrical contact with the negative capacitance structure, configured to change surface potential, in the presence of an analyte, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.
2. The chemical sensor of claim 1 , wherein the ferroelectric layer is formed from a polyvinylidene fluoride.
3. The chemical sensor of claim 2 , wherein the ferroelectric layer is formed from P(VDF0.75-TrFe0.25, PbZr0.52Ti0.48O3).
4. The chemical sensor of claim 1 , wherein the input and output terminals are a source and drain region of a field-effect transistor and wherein the ferroelectric layer acts as a gate for the field-effect transistor.
5. The chemical sensor of claim 1 , wherein the input and output terminals are a collector and drain of a bipolar junction transistor and wherein the ferroelectric layer acts as a base for the bipolar junction transistor.
6. The chemical sensor of claim 1 , wherein the polarization change in the ferroelectric layer causes a change in the current passing from the input terminal to the output terminal.
7. A method for sensing the presence of an analyte, comprising:
exposing a functionalized electrode to a substance to be tested, wherein the functionalized electrode is electrically connected to a sensor having a transistor comprising a negative capacitance structure, and wherein the negative capacitance structure includes a ferroelectric layer, positioned between two metal layers that are arranged vertically with respect to one another, and has a voltage threshold that triggers a discontinuous polarization change in the negative capacitance structure when the functionalized electrode exerts a potential in response to the presence of the analyte, and controls a current that passes between an input terminal and an output terminal of the transistor;
measuring the current passing between the input terminal and the output terminal of the transistor; and
determining the presence of the analyte based on changes in the measured current.
8. The method of claim 7 , wherein determining the presence of the analyte comprises indicating the presence of the analyte if a change in the measured current exceeds a threshold.
9. The method of claim 7 , wherein determining the presence of the analyte comprises comparing a voltage derived from the measured current to a voltage of a reference electrode.
10. A method of forming a chemical sensor, comprising:
forming an input terminal and an output terminal on a semiconductor substrate;
forming a negative capacitance structure over the semiconductor substrate, the input terminal, and the output terminal, the negative capacitance structure having a threshold voltage that triggers a discontinuous polarization change in the negative capacitance structure, by:
forming a first metal layer;
forming a ferroelectric layer on the first metal layer; and
forming a second metal layer on the ferroelectric layer; and
forming a functionalized electrode, in electrical communication with the negative capacitance structure, that exerts an above-threshold voltage on the negative capacitance structure in the presence of an analyte.
11. The method of claim 10 , wherein forming the functionalized electrode comprises treating a top surface of the second metal layer with a functionalizing substance.
12. The method of claim 10 , wherein the ferroelectric layer is formed from polyvinylidene fluoride.
13. The method of claim 12 , wherein the ferroelectric layer is formed from P(VDF0.75-TrFe0.25, PbZr0.52Ti0.48O3).
14. The method of claim 10 , wherein forming the functionalized electrode comprises treating a separate metal electrode with a functionalizing substance and connecting the separate metal electrode to the negative capacitance structure with a conductive element.
15. The method of claim 10 , further comprising forming a reference electrode that exhibits a fixed voltage.