IP Library Granted Patent US 12,138,737
Granted Patent B2
US 12,138,737 · App. 17/218,716 · Granted Nov 12, 2024

CMP polishing pad with enhanced rate

Inventor: Mohammad T. Islam (Middletown, DE)
Assignee: Rohm and Haas Electronic Materials Holdings, Inc.
B24B37/24B24B37/042
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Quick Facts
Patent No.
US 12,138,737
App. No.
17/218,716
Granted
Nov 12, 2024
Kind
B2
Abstract

A polishing pad having a polishing portion comprising a polymer matrix and rate enhancing lamellar particles that include a phosphate or an arsenate of group III-A or group IV-A metals can be effective in chemical mechanical polishing especially when using a slurry comprising particles having a positive charge in slurry conditions.

Claims (8)

1. A polishing pad useful in chemical mechanical polishing having a polishing portion comprising a polymer matrix and lamellar particles for enhancing polishing rate, the lamellar particles having the formula M(HYO4)2n(H20), where M is Zr*4, Ti*4 or Ce*4, Y is P or As, and n is 0, 1, or 2 and wherein the lamellar particles have an alternating crystalline structure of FIG. 1 that cleaves into platelets.

2. The polishing pad of claim 1 wherein the lamellar particles are zirconium hydrogen phosphate particles.

3. The polishing pad of claim 1 wherein the polymer matrix comprises polyurethane, polyolefins, polyethylene, polypropylene, polyesters, polyethers, nylons, polyvinyl alcohols, polyvinyl acetates, polyacrylates, polycarbonates, polyacrylamides, polyamides, nylon, polyimides, polyether ketones, polysulfones, and fluoropolymers, copolymers thereof, or mixtures thereof.

4. A polishing pad useful in chemical mechanical polishing having a polishing portion comprising a polyurethane matrix and lamellar zirconium hydrogen phosphate particles for enhancing polishing rate, the lamellar particles are 0.1 to 20 weight percent based on total weight of the polishing layer and wherein the lamellar particles have an average length of 0.5 to 20 microns and wherein the lamellar particles have an alternating crystalline structure of FIG. 1 that cleaves into platelets.

5. The polishing pad of claim 4 wherein the amount of the lamellar particles are 2 to 15 weight percent based on total weight of the polishing layer.

6. The polishing pad of claim 4 wherein the lamellar particles have a length to width ratio of 3 to 20.

7. The polishing pad of claim 4 wherein the polishing pad is non-porous.

8. The polishing pad of claim 4 wherein the polishing layer includes 5 to 45 volume percent porosity.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 069274/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2021
From: ISLAM, MOHAMMAD T.
To: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
Reel/Frame 055929/0262 →
Continuity (1)
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