Image sensor scheme for optical and electrical improvement

1. An integrated chip, comprising:

a photodetector arranged within a semiconductor substrate;

one or more isolation structures arranged within one or more trenches defined by sidewalls of the semiconductor substrate arranged on opposing sides of the photodetector; and

wherein the one or more trenches extend from a first side of the semiconductor substrate to within the semiconductor substrate, wherein the one or more isolation structures respectively comprise a reflective medium including a metal configured to reflect electromagnetic radiation, and wherein the metal has a topmost surface and a bottommost surface that both extend between outermost sidewalls of the metal, the outermost sidewalls of the metal being directly and laterally between the sidewalls of the semiconductor substrate.

2. The integrated chip of claim 1 , wherein the metal has a largest height measured along a vertical line bisecting the metal.

3. The integrated chip of claim 1 , wherein the one or more isolation structures respectively comprise a dielectric material separating reflective medium from the sidewalls of the semiconductor substrate, the dielectric material having thicknesses that vary over a vertical distance, the thicknesses being measured between a first sidewall of the sidewalls of the semiconductor substrate and a sidewall of the reflective medium facing the first sidewall.

4. The integrated chip of claim 1 , further comprising:

one or more shallow trench isolation (STI) structures arranged along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate, the one or more STI structures being arranged between additional sidewalls of the semiconductor substrate and directly below the one or more isolation structures, the semiconductor substrate vertically separating the one or more STI structures from the one or more isolation structures.

5. The integrated chip of claim 1 , further comprising:

one or more transistor devices disposed along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate, wherein the semiconductor substrate comprises surfaces defining a plurality of protrusions arranged over the photodetector and along the first side of the semiconductor substrate.

6. The integrated chip of claim 1 , wherein the reflective medium extends between a bottom and a top of the reflective medium along a center of the reflective medium that is within a first trench of the one or more trenches, as viewed along a cross-sectional view.

7. The integrated chip of claim 1 , wherein a vertical line that bisects the metal also extends through the topmost surface and the bottommost surface of the metal.

8. The integrated chip of claim 1 , wherein the metal continuously extends between outermost sides of the reflective medium along a horizontally extending line bisecting the reflective medium.

9. The integrated chip of claim 1 , wherein the one or more isolation structures comprise a core of the metal surrounded by a dielectric material.

10. An integrated chip, comprising:

a photodetector arranged within a substrate, wherein the substrate has sidewalls defining one or more trenches laterally surrounding the photodetector and vertically extending from a first side of the substrate to within the substrate;

one or more dielectric materials disposed along the sidewalls of the substrate defining the one or more trenches;

one or more reflective structures arranged within the one or more trenches, wherein the one or more reflective structures have sides that are laterally separated from the sidewalls of the substrate by the one or more dielectric materials and wherein the one or more reflective structures completely fill an area between sidewalls of the one or more dielectric materials; and

one or more isolation structures arranged along a second side of the substrate opposing the first side of the substrate, the one or more isolation structures being laterally between additional sidewalls of the substrate and vertically separated from the one or more reflective structures by the substrate.

11. The integrated chip of claim 10 , wherein the one or more reflective structures comprise a metal and a cavity, the cavity being arranged vertically and directly between a bottom of the metal that faces the substrate and a bottom of the one or more trenches and the cavity being arranged laterally and directly between the sidewalls of the substrate defining the one or more trenches.

12. The integrated chip of claim 10 , further comprising:

a bias source configured to provide a bias signal to the one or more reflective structures.

13. The integrated chip of claim 10 ,

wherein the one or more reflective structures comprise a bottom that faces the second side of the substrate; and

wherein the bottom is vertically separated from the second side by a non-zero distance extending through the substrate.

14. The integrated chip of claim 10 , wherein the one or more reflective structures have a maximum width that is vertically between a topmost surface and a bottommost surface of the one or more reflective structures.

15. The integrated chip of claim 10 , further comprising:

one or more transistor devices disposed along the second side of the substrate.

16. A method of forming an integrated chip, comprising:

performing a first etching process on a first side of a substrate to define one or more trenches extending to within the substrate;

forming a fill material within the one or more trenches;

performing a second etching process on the fill material to form a cavity within the fill material, wherein the cavity is formed by sidewalls of the fill material and a horizontally extending surface of the fill material that is laterally between the sidewalls; and

forming one or more reflective materials within the cavity after performing the second etching process.

17. The method of claim 16 , further comprising:

performing a third etching process onto the first side of the substrate prior to performing the first etching process, wherein the third etching process forms one or more protrusions along the first side of the substrate.

18. The method of claim 17 , wherein a part of the cavity, which is directly between sidewalls of the substrate forming the one or more trenches, is completely filled with the one or more reflective materials.

19. The method of claim 16 , further comprising:

forming a conductive material onto an upper surface of the one or more reflective materials that faces away from the substrate.

20. The method of claim 16 , wherein the cavity is laterally and directly between sidewalls of the substrate forming the one or more trenches.