System on chip (SOC) current profile model for integrated voltage regulator (IVR) co-design
View Patent ↗A method includes: extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC; determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model; extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage; refining the first design data of the IVR to generate a second design data of the IVR; determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.
1. A method comprising:
extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC;
determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model;
extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage;
refining the first design data of the IVR to generate a second design data of the IVR;
determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model;
extracting a third current profile model corresponding to the SOC at a third design stage of the SOC, the third design stage being subsequent to the second design stage;
refining the second design data of the IVR to generate a third design data of the IVR; and
determining that the third design data of the IVR and the SOC pass a third co-simulation based on the extracted third current profile model.
2. The method of claim 1 , wherein the first design stage comprises a Register-Transfer Level (RTL) design stage.
3. The method of claim 1 , wherein the second design stage comprises a pre-simulation design stage of the SOC.
4. The method of claim 1 , wherein the third design stage comprises a post-simulation design stage of the SOC.
5. The method of claim 1 , wherein at least one of the first current profile model, the second current profile model, and the third current profile model includes a decoupling capacitor model.
6. The method of claim 1 , wherein at least one of the first current profile model, the second current profile model, and the third current profile model includes a power grid model.
7. The method of claim 6 , wherein the power grid model corresponds to at least one of the following: bumps and Through-Silicon Vias (TSV).
8. The method of claim 6 , wherein the power grid model corresponds to a power mesh of the SOC.
9. The method of claim 1 , wherein at least one of the first current profile model, the second current profile model, and the third current profile model comprises a Piecewise Linear (PWL) description of an SOC I(t) extracted from a dynamic power waveform.
10. The method of claim 9 , further comprising selecting a T step for the SOC I(t) comprising min (0.1×T period , T rise /T fall ).
11. The method of claim 10 , further comprising flipping back the I(t) during at least one of the first co-simulation, the second co-simulation, and the third co-simulation.
12. The method of claim 1 , further comprising applying a regression scaling to the first current profile, the second current profile, and the third current profile.
13. The method of claim 1 , wherein the IVR comprises a switching regulator.
14. The method of claim 1 , wherein the IVR comprises a low-dropout (LDO) regulator.
15. A method comprising:
extracting a first current profile model corresponding to a System on Chip (SOC) at a Register-Transfer Level (RTL) design stage of the SOC;
determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model;
extracting a second current profile model corresponding to the SOC at a pre-simulation design stage of the SOC;
refining the first design data of the IVR to generate a second design data of the IVR; and
determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.
16. The method of claim 15 , further comprising:
extracting a third current profile model corresponding to the SOC at a post-simulation design stage of the SOC;
refining the second design data of the IVR to generate a third design data of the IVR; and
determining that the third design data of the IVR and the SOC pass a third co-simulation based on the extracted third current profile model.
17. The method of claim 16 , wherein at least one of the first current profile model, the second current profile model, and the third current profile model includes at least one of the following a decoupling capacitor model, a power grid model, and a Piecewise Linear (PWL) description of an SOC I(t) extracted from a dynamic power waveform.
18. A method comprising:
extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC;
determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model;
extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage;
refining the first design data of the IVR to generate a second design data of the IVR;
determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model; and
applying a first regression scaling to the first current profile and a second regression scaling to the second current profile, wherein the second regression scaling is larger than the first regression scaling.
19. The method of claim 18 , further comprising:
extracting a third current profile model corresponding to the SOC at a third design stage of the SOC, the third design stage being subsequent to the second design stage;
refining the second design data of the IVR to generate a third design data of the IVR;
determining that the third design data of the IVR and the SOC pass a third co-simulation based on the extracted third current profile model; and
applying a third regression scaling to the third current profile, wherein the third regression scaling is larger than the second regression scaling.
20. The method of claim 19 , wherein the first design stage comprises a Register-Transfer Level (RTL) design stage, the second design stage comprises a pre-simulation design stage of the SOC, and the third design stage comprises a post-simulation design stage of the SOC.