3D semiconductor device and structure with multiple isolation layers
A 3D semiconductor device, the device including: a first level including single crystal first transistors, and a first metal layer, where the first level is overlaid by a first isolation layer; a second level including second transistors, where the first isolation layer is overlaid by the second level, and where the second level is overlaid by a second isolation layer; a third level including single crystal third transistors, where the second isolation layer is overlaid by the third level, where the third level is overlaid by a third isolation layer, where the third level is bonded to the second isolation layer, where the bonded includes at least one oxide to oxide bond, and where the bonded includes at least one metal to metal bond.
1. A 3D semiconductor device, the device comprising:
a first level comprising single crystal first transistors, and a first metal layer,
wherein said first level is overlaid by a first isolation layer;
a second level comprising second transistors,
wherein said first isolation layer is overlaid by said second level,
wherein said second level is overlaid by a second isolation layer,
wherein said second isolation layer comprises an oxide, and
wherein said second isolation layer comprises vias comprising a metal fill;
a third level comprising single crystal third transistors,
wherein said second isolation layer is overlaid by said third level,
wherein said third level is overlaid by a third isolation layer,
wherein said third level comprises a bonding interface comprising an oxide and a metal,
wherein said third level is bonded to said second isolation layer,
wherein said bonded comprises at least one oxide to oxide bond, and
wherein said bonded comprises at least one metal to metal bond.
2. The device according to claim 1 ,
wherein said first isolation layer and said second isolation layer are separated by a distance of less than fifty microns and greater than 3 nm.
3. The device according to claim 1 , further comprising:
a connective path between said third transistors and said second transistors,
wherein said connective path comprises a via through said second isolation layer, and
wherein said via has a diameter of less than 1 micron and greater than 5 nm.
4. The device according to claim 1 ,
wherein said second level comprises a memory array.
5. The device according to claim 1 ,
wherein said second level and said third level each comprises a memory array.
6. The device according to claim 1 ,
wherein said second level comprises a memory array, and
wherein said first level comprises control circuits adapted to control data to be written to said memory array.
7. The device according to claim 1 , further comprising:
first connections to external devices; and
second connections to said external devices,
wherein at least a portion of said first connections are disposed underneath said first isolation layer, and
wherein at least a portion of said second connections are disposed above said third isolation layer.
8. A 3D semiconductor device, the device comprising:
a first level comprising single crystal first transistors, and a first metal layer,
wherein said first level is overlaid by a first isolation layer,
wherein said first isolation layer comprises an oxide, and
wherein said first isolation layer comprises vias comprising a metal fill, said vias are connected to said first metal layer;
a second level comprising second transistors,
wherein said first isolation layer is overlaid by said second level,
wherein said second level is overlaid by a second isolation layer, and
wherein said second level comprises a bonding interface comprising an oxide and a metal;
a third level comprising single crystal third transistors,
wherein said second isolation layer is overlaid by said third level,
wherein said third level is overlaid by a third isolation layer,
wherein said second level is bonded to said first isolation layer,
wherein said bonded comprises at least one oxide to oxide bond, and
wherein said bonded comprises at least one metal to metal bond.
9. The device according to claim 8 ,
wherein said first isolation layer and said second isolation layer are separated by a distance of less than fifty microns and greater than 3 nm.
10. The device according to claim 8 , further comprising:
a connective path between said third transistors and said second transistors,
wherein said connective path comprises a via through said second isolation layer, and
wherein said via has a diameter of less than 1 micron and greater than 5 nm.
11. The device according to claim 8 ,
wherein said second level comprises a memory array.
12. The device according to claim 8 ,
wherein said second level and said third level each comprises a memory array.
13. The device according to claim 8 ,
wherein said second level comprises a memory array, and
wherein said first level comprises control circuits adapted to control data to be written to said memory array.
14. The device according to claim 8 , further comprising:
first connections to external devices; and
second connections to said external devices,
wherein at least a portion of said first connections are disposed underneath said first isolation layer, and
wherein at least a portion of said second connections are disposed above said third isolation layer.
15. A 3D semiconductor device, the device comprising:
a first level comprising first transistors,
wherein said first level is overlaid by a first isolation layer;
a second level comprising second transistors,
wherein said first isolation layer is overlaid by said second level, and
wherein said second level is overlaid by a second isolation layer;
a third level comprising third transistors,
wherein said second isolation layer is overlaid by said third level,
wherein said third level is overlaid by a third isolation layer,
wherein said third isolation layer comprises an oxide, and
wherein said third isolation layer comprises vias comprising a metal fill;
a fourth level comprising single crystal third transistors,
wherein said third isolation layer is overlaid by said fourth level,
wherein said fourth level comprises a bonding interface comprising an oxide and a metal,
wherein said fourth level is overlaid by a fourth isolation layer,
wherein said fourth level is bonded to said third isolation layer,
wherein said bonded comprises at least one oxide to oxide bond, and
wherein said bonded comprises at least one metal to metal bond.
16. The device according to claim 15 ,
wherein said first isolation layer and said second isolation layer are separated by a distance of less than fifty microns and greater than 3 nm.
17. The device according to claim 15 , further comprising:
a connective path between said third transistors and said fourth transistors,
wherein said connective path comprises a via through said third isolation layer, and
wherein said via has a diameter of less than 1 micron and greater than 5 nm.
18. The device according to claim 15 ,
wherein said second level and said third level each comprises a memory array.
19. The device according to claim 15 ,
wherein said second level comprises a memory array, and
wherein said fourth level comprises control circuits adapted to control data to be written to said memory array.
20. The device according to claim 15 , further comprising:
first connections to external devices; and
second connections to said external devices,
wherein at least a portion of said first connections are disposed underneath said first isolation layer, and
wherein at least a portion of said second connections are disposed above said third isolation layer.