Oxide semiconductor film and semiconductor device
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In 1+δ Ga 1−δ O 3 (ZnO) m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In x Ga y O 3 (ZnO) m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
1. A semiconductor device comprising:
a substrate;
a first oxide semiconductor layer over the substrate;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a first gate electrode over the second oxide semiconductor layer,
wherein a material of the first oxide semiconductor layer has a different composition from a material of the second oxide semiconductor layer, and
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer has a surficial crystal region in which a c-axis direction of crystals is aligned while each of an a-axis direction and a b-axis direction is varied in an a-b plane.
2. The semiconductor device according to claim 1 , wherein the first oxide semiconductor layer is in contact with the second oxide semiconductor layer.
3. The semiconductor device according to claim 1 , further comprising a second gate electrode between the substrate and the first oxide semiconductor layer.
4. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Ga and Zn.
5. The semiconductor device according to claim 1 ,
wherein a composition of each surficial crystal region of the first oxide semiconductor layer and the second oxide semiconductor layer is represented by In 1+δ Ga 1−δ O 3 (ZnO) m , and
wherein 0<δ<1 and m=1 to 3 are satisfied.
6. The semiconductor device according to claim 1 , wherein crystallinity of atoms in the surficial crystal region is higher than crystallinity of atoms in the other region of the first oxide semiconductor layer.
7. An electronic appliance comprising the semiconductor device according to claim 1 , wherein the electronic appliance is any one of a television set, a monitor, a camera, a video camera, a digital photo frame, a mobile phone handset, a game machine, an information terminal, an audio reproducing device and a display device.
8. A semiconductor device comprising:
a substrate;
a first oxide semiconductor layer over the substrate;
a second oxide semiconductor layer in contact with the first oxide semiconductor layer; and
a source electrode and a drain electrode each electrically connected to the second oxide semiconductor layer,
wherein a material of the first oxide semiconductor layer has a different composition from a material of the second oxide semiconductor layer, and
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer has a surficial crystal region in which a c-axis direction of crystals is aligned while each of an a-axis direction and a b-axis direction is varied in an a-b plane.
9. The semiconductor device according to claim 8 , further comprising a gate electrode between the substrate and the first oxide semiconductor layer.
10. The semiconductor device according to claim 8 , further comprising a gate electrode over the second oxide semiconductor layer.
11. The semiconductor device according to claim 8 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Ga and Zn.
12. The semiconductor device according to claim 8 ,
wherein a composition of each surficial crystal region of the first oxide semiconductor layer and the second oxide semiconductor layer is represented by In 1+δ Ga 1−δ O 3 (ZnO) m , and
wherein 0<δ<1 and m=1 to 3 are satisfied.
13. The semiconductor device according to claim 8 , wherein crystallinity of atoms in the surficial crystal region is higher than crystallinity of atoms in the other region of the first oxide semiconductor layer.
14. An electronic appliance comprising the semiconductor device according to claim 8 , wherein the electronic appliance is any one of a television set, a monitor, a camera, a video camera, a digital photo frame, a mobile phone handset, a game machine, an information terminal, an audio reproducing device and a display device.