Display device, manufacturing method of display device, and electronic device
A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.
1. An electronic device comprising:
a first adhesive layer over a first surface of a first base material;
a first insulating layer over the first adhesive layer;
a second insulating layer over the first insulating layer;
an element layer over the second insulating layer;
a second adhesive layer over the element layer;
a second base material over the second adhesive layer; and
a protective film provided at a second surface of the first base material,
wherein the element layer comprises a transistor, a capacitor, and a touch sensor,
wherein the protective film comprises one of platinum, nickel, cobalt, manganese, and copper,
wherein, in a plan view, a wiring for the touch sensor has a net-like shape and overlaps with a first wiring and a second wiring,
wherein the first wiring is electrically connected to a gate electrode of the transistor,
wherein the second wiring is electrically connected to a source electrode or a drain electrode of the transistor, and
wherein the protective film overlaps with the transistor.
2. An electronic device comprising:
a first layer over a first surface of a first substrate;
a second layer over the first layer;
an element layer between the first layer and the second layer;
a first insulating layer over the first layer;
a second insulating layer over the first insulating layer; and
a second substrate over the second layer,
wherein the first substrate is provided with a protective film,
wherein the first layer and the second layer have a same function,
wherein the element layer comprises a touch sensor,
wherein, in a plan view, each of a plurality of wirings for the touch sensor has a net-like shape,
wherein, in the plan view, the plurality of wirings overlap with a plurality of first wirings and a plurality of second wirings,
wherein the plurality of first wirings partly function as gate electrodes of a plurality of transistors included in the element layer,
wherein the plurality of second wirings partly function as source electrodes or drain electrodes of the plurality of transistors, and
wherein the protective film overlaps with the touch sensor.
3. A method for manufacturing an electronic device comprising:
a first adhesive layer over a first surface of a first base material;
an element layer over the first adhesive layer;
a second adhesive layer over the element layer;
a second base material over the second adhesive layer; and
a protective film provided at a second surface of the first base material,
wherein the element layer comprises a transistor, a capacitor, and a touch sensor,
wherein the protective film comprises one of platinum, nickel, cobalt, manganese, and copper,
wherein, in a plan view, a wiring for the touch sensor has a net-like shape and overlaps with a first wiring and a second wiring,
wherein the first wiring is electrically connected to a gate electrode of the transistor,
wherein the second wiring is electrically connected to a source electrode or a drain electrode of the transistor, and
wherein the element layer is formed on a support substrate and then separated from the support substrate.
4. The electronic device according to claim 2 , wherein the protective film comprises one of platinum, nickel, cobalt, manganese, and copper.
5. The electronic device according to claim 1 , wherein the transistor comprises an oxide semiconductor in a channel region.
6. The electronic device according to claim 2 , wherein one of the plurality of transistors comprises an oxide semiconductor in a channel region.
7. The method for manufacturing an electronic device according to claim 3 , wherein the transistor comprises an oxide semiconductor in a channel region.
8. The method for manufacturing an electronic device according to claim 3 , wherein the element layer is transferred to a substrate having flexibility after the separation from the support substrate.
9. The electronic device according to claim 2 , wherein the first layer and the second layer comprise an adhesive material.