Through-substrate via structure and method of manufacture

1. A method for forming a through-substrate via structure, comprising:

providing a substrate having a first major surface and a second major surface opposite to the first major surface;

providing a conductive via structure comprising:

a trench extending from the first major surface to a first distance, wherein the trench comprises a first trench portion and a second trench portion laterally separated from the first trench portion in a cross-sectional view such that a part of the substrate is interposed between the first trench portion and the second trench portion;

a conductive material within the trench and having a lower surface; and

the lower surface terminates at the first distance;

providing a recessed region extending from the second major surface inward to a second distance, wherein the recessed region defines a recessed surface that is parallel to the first major surface of the substrate and contiguous with the lower surface of the conductive material so that the lower surface is exposed at the recessed surface;

providing an insulator at sidewall surfaces of the recessed region and along a portion of the recessed surface, the insulator having an opening that exposes the conductive material;

providing a first conductive region within the recessed region and extending into the opening to contact the lower surface of the conductive material at the recessed surface; and

providing a second conductive region contacting the first conductive region, wherein a distal surface of the second conductive region is outside of the recessed region;

wherein:

providing the first conductive region comprises:

providing the first conductive region extending along a first sidewall surface of the recessed region in a cross-sectional view but not along at least a portion of a second sidewall surface of the recessed region opposite to the first sidewall surface in the cross-sectional view, and extending along at least a portion of the second major surface outside of the recessed region; and

providing the second conductive region comprises attaching a conductive bump to the second portion of the first conductive region so that the conductive bump is external to the recessed region.

2. The method of claim 1 , wherein:

providing the recessed region occurs after providing the conductive via structure; and

the method further comprises providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region outside of the recessed region.

3. The method of claim 1 , wherein:

providing the conductive via structure comprises providing the first distance in a range from about 10 microns through about 20 microns.

4. The method of claim 1 , wherein:

providing the substrate comprises providing the substrate having a thickness greater than 200 microns; and

providing the conductive via structure comprises providing the conductive material comprising tungsten.

5. The method of claim 1 , wherein:

providing the first conductive region comprises plating the first conductive region having a thickness greater than 100 nanometers (nm).

6. The method of claim 1 , wherein:

providing the substrate comprises providing the substrate having at least one side 15 millimeters in length and a thickness greater than or equal to 250 microns.

7. The method of claim 1 , wherein:

providing the first conductive region comprises providing the first conductive region contacting a portion of the substrate at the recessed surface.

8. The method of claim 1 , wherein:

providing the recessed region comprises providing the sidewall surface of the recessed region having s a sloped shape so that the recessed region has a first width proximate to the conductive via structure and a second width proximate to the second major surface; and

the second width is greater than the first width.

9. A method for forming a through-substrate via structure, comprising:

providing a substrate having a first major surface and a second major surface opposite to the first major surface;

providing a conductive via structure comprising:

a trench extending from the first major surface to a first distance;

a conductive material within the trench; and

an insulating structure along sidewalls of the trench and interposed between the conductive material and the sidewalls of the trench;

providing a recessed region extending from the second major surface inward to a second distance to provide a recessed surface parallel to the first major surface of the substrate, wherein the conductive material and the insulating structure are exposed from the recessed surface;

providing an insulator within the recessed region;

providing an opening extending through the insulator exposing the conductive material and the insulating structure at the recessed surface;

providing a first conductive region over the insulator, wherein the first conductive region extends into the opening and contacts the conductive material and the insulating structure at the recessed surface, and wherein the first conductive region is adjacent to sidewalls of the opening; and

providing a second conductive region over the first conductive region, wherein a distal surface of the second region is outside of the recessed region;

wherein:

providing the first conductive region comprises providing the first conductive region extending along a first sidewall surface of the recessed region in a cross-sectional view but not along at least a portion of a second sidewall surface of the recessed region opposite to the first sidewall surface in the cross-sectional view and extending along at least a portion of the second major surface outside of the recessed region.

10. The method of claim 9 , wherein:

providing the first conductive region comprises providing the first conductive region comprising copper.

11. The method of claim 9 , wherein:

providing the first conductive region comprises providing the first conductive region contacting at least a portion of the substrate at the recessed surface adjacent to the insulating structure.

12. The method of claim 9 , wherein:

providing the conductive via structure comprises:

providing the first distance less than about 20 microns; and

providing the conductive material comprising tungsten; and

providing the recessed region comprises providing the second distance greater than or equal to 150 microns.

13. The method of claim 9 , wherein:

providing the insulator comprises providing the insulator comprising a polymer.

14. The method of claim 9 , wherein:

providing the first conductive region comprises protruding the first conductive region outward from the recessed region and outward from the second major surface.

15. The method of claim 9 , wherein:

the method further comprising providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region outside of the recessed region; and

providing the second conductive region comprises attaching a conductive bump to the second portion of the first conductive region so that the conductive bump is external to the recessed region.

16. A method for forming a through-substrate via structure, comprising:

providing a substrate having a first major surface and a second major surface opposite to the first major surface;

providing a conductive via structure comprising:

a trench extending from the first major surface to a first distance into the substrate; and

a conductive material within the trench;

after providing the conductive via structure, providing a recessed region extending from the second major surface into the substrate to a second distance, wherein the recessed region defines a recessed surface generally parallel to the first major surface of the substrate, and wherein the conductive material is exposed from and terminates at the recessed surface;

providing a first conductive region within the recessed region and contacting the conductive material at the recessed surface; and

providing a second conductive region contacting the first conductive region, wherein a distal surface of the second conductive region is outside of the recessed region;

wherein:

providing recessed region comprises providing the recessed region with a first sidewall surface and a second sidewall surface opposite to the first sidewall surface; and

providing the first conductive region comprises providing the first conductive region extending along the first sidewall surface but not along at least a portion of the second sidewall surface and extending along at least a portion of the second major surface outside of the recessed region.

17. The method of claim 16 , further comprising:

providing a conductor coupled to the conductive material at the first major surface of the substrate, the conductor comprising a bonding area for connecting to an electronic device.

18. The method of claim 16 , wherein:

the method further comprises providing an insulator within the recessed region and having an opening at the recessed surface to expose the conductive material;

providing the first conductive region comprises:

providing the first conductive region extending into the opening to contact the conductive material at the recessed surface;

the method further comprising providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region outside of the recessed region; and

providing the second conductive region comprises attaching a conductive bump to the second portion of the first conductive region so that the conductive bump is external to the recessed region.

19. The method of claim 16 , wherein:

providing the conductive via structure comprises providing an insulating structure along sidewalls of the trench and interposed between the conductive material and the sidewalls of the trench; and

providing the first conductive region comprises providing the first conductive region contacting that insulating structure and at least a portion of the substrate at the recessed surface.

20. The method of claim 16 , wherein:

providing the substrate comprises providing the substrate comprising an insulating material.