IP Library Granted Patent US 11,492,526
Granted Patent B2
US 11,492,526 · App. 17/262,143 · Granted Nov 8, 2022

Slurry, method for producing polishing liquid, and polishing method

Inventors: Tomoyasu Hasegawa (Tokyo, JP); Tomohiro Iwano (Tokyo, JP); Takaaki Matsumoto (Tokyo, JP); Tomomi Kukita (Tokyo, JP)
Assignee: SHOWA DENKO MATERIALS CO., LTD.
C09K3/1454B24B37/042C09G1/02C09K3/1409H01L21/304H01L21/31053H01L22/26C01F17/235C01P2002/85C01P2004/64C01P2006/40
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Quick Facts
Patent No.
US 11,492,526
App. No.
17/262,143
Granted
Nov 8, 2022
Kind
B2
Abstract

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and in a case where a content of the abrasive grains is 2.0% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 30 minutes at a centrifugal acceleration of 1.1×10 4 G is 24 m 2 /g or more.

Claims (29)

1. A slurry comprising abrasive grains and a liquid medium, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

the first particles contain cerium oxide,

the second particles contain cerium hydroxide,

a particle size of the second particles is smaller than a particle size of the first particles, and

in a case where a content of the abrasive grains is 2.0% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 30 minutes at a centrifugal acceleration of 1.1×10 4 G is 24 m 2 /g or more.

2. The slurry according to claim 1 , wherein an average particle size of the abrasive grains is 16 to 1050 nm.

3. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01 to 10% by mass.

4. A method for producing a polishing liquid, the method comprising a step of filtering the slurry according to claim 1 .

5. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by the method for producing a polishing liquid according to claim 4 .

6. The polishing method according to claim 5 , wherein the surface to be polished contains silicon oxide.

7. The slurry according to claim 1 , wherein a particle size of the first particles is 100 nm or more.

8. The slurry according to claim 1 , wherein a particle size of the second particles is 30 nm or less.

9. The slurry according to claim 1 , wherein an average particle size of the abrasive grains is 120 nm or more.

10. The slurry according to claim 1 , wherein a content of cerium oxide in the abrasive grains is 50 to 97% by mass on the basis of all the abrasive grains in the slurry.

11. The slurry according to claim 1 , wherein a content of cerium hydroxide in the abrasive grains is 3 to 50% by mass on the basis of all the abrasive grains in the slurry.

12. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01 to 5% by mass.

13. A polishing liquid obtained by filtering the slurry according to claim 1 .

14. A slurry comprising abrasive grains and a liquid medium, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

the first particles contain cerium oxide,

the second particles contain cerium hydroxide,

a particle size of the second particles is 30 nm or less, and

in a case where a content of the abrasive grains is 2.0% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 30 minutes at a centrifugal acceleration of 1.1×10 4 G is 24 m 2 /g or more.

15. The slurry according to claim 14 , wherein an average particle size of the abrasive grains is 16 to 1050 nm.

16. The slurry according to claim 14 , wherein a content of the abrasive grains is 0.01 to 10% by mass.

17. A method for producing a polishing liquid, the method comprising a step of filtering the slurry according to claim 14 .

18. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by the method for producing a polishing liquid according to claim 17 .

19. The polishing method according to claim 18 , wherein the surface to be polished contains silicon oxide.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2021
From: HASEGAWA, TOMOYASU; IWANO, TOMOHIRO; MATSUMOTO, TAKAAKI; KUKITA, TOMOMI
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 055613/0171 →