Inhibitor for RuO
Provided are an inhibitor for RuO 4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO 4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO 4 gas. Specifically, provided is an inhibitor for RuO 4 gas generation for inhibiting a RuO 4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO 4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.
1. An inhibitor for RuO 4 gas generation comprising an onium salt consisting of an onium ion and a bromine-containing ion,
wherein a pH of the inhibitor for RuO 4 gas generation at 25° C. is 8 or more and 14 or less,
wherein the onium salt is a quaternary onium salt expressed by Formula (1):
wherein A + is an ammonium ion or a phosphonium ion; and R 1 , R 2 , R 3 , and R 4 are independently an alkyl group with a carbon number from 2 to 25, an allyl group, an aralkyl group having an alkyl group with a carbon number from 1 to 25, or an aryl group, wherein at least one hydrogen atom in a ring of an aryl group in the aralkyl group, or the aryl group may be replaced with a fluorine atom, a chlorine atom, an alkyl group with a carbon number from 1 to 10, an alkenyl group with a carbon number from 2 to 10, an alkoxy group with a carbon number from 1 to 9, or an alkenyloxy group with a carbon number from 2 to 9; and in these groups, at least one hydrogen atom may be replaced with a fluorine atom or a chlorine atom, and X − is the bromine-containing ion; and
wherein the RuO 4 gas is associated with the manufacturing process for semiconductor elements.
2. The inhibitor for RuO 4 gas generation according to claim 1 , wherein the quaternary onium salt is a salt comprising at least one ammonium ion selected from the group consisting of tetraethylammonium ion, tetrapropylammonium ion, tetrabutylammonium ion, tetrapentylammonium ion, and tetrahexyl ammonium ion.
3. The inhibitor for RuO 4 gas generation according to claim 1 , wherein the pH of the inhibitor for RuO 4 gas generation at 25° C. is 12 or more and 13 or less.
4. A method for inhibiting RuO 4 gas generation comprising a step of adding the inhibitor for RuO 4 gas generation according to claim 1 to a ruthenium treatment liquid or a ruthenium-containing liquid in a manufacturing process for semiconductor elements.
5. A liquid mixture comprising:
the inhibitor for RuO 4 gas generation according to claim 1 and an oxidizing agent, and
a ruthenium treatment liquid or a ruthenium-containing liquid,
wherein the pH of the liquid mixture at 25° C. is 7 or more and 14 or less.
6. The mixed liquid according to claim 5 , wherein the quaternary onium salt is a salt comprising at least one ammonium ion selected from the group consisting of tetraethyl ammonium ion, tetrapropylammonium ion, tetrabutylammonium ion, tetrapentylammonium ion, and tetrahexylammonium ion.
7. The mixed liquid according to claim 5 , wherein the oxidizing agent is selected from the group consisting of halogen oxyacid, an ion of halogen oxyacid, hydrogen peroxide, and ozone.
8. A method for inhibiting RuO 4 gas generation comprising a step of etching with the mixed liquid according to claim 5 in a manufacturing process for semiconductor elements.