IP Library › Granted Patent US 11,581,469
Granted Patent B2
US 11,581,469 · App. 17/271,021 · Granted Feb 14, 2023

Thermoelectric conversion material chip manufacturing method, and method for manufacturing thermoelectric conversion module using chip obtained by said manufacturing method

Inventors: Kunihisa Kato (Warabi, JP); Tsuyoshi Muto (Saitama, JP); Masaya Todaka (Saitama, JP); Yuma Katsuta (Gyoda, JP)
Assignee: LINTEC CORPORATION
H01L35/34H01L35/08H01L35/32
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Quick Facts
Patent No.
US 11,581,469
App. No.
17/271,021
Granted
Feb 14, 2023
Kind
B2
Abstract

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Claims (46)

1. A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, the method comprising:

(A) forming a sacrificial layer on a substrate,

(B) forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer,

(C) annealing the thermoelectric conversion material layer,

(D) transferring the thermoelectric conversion material layer to a pressure-sensitive adhesive layer, such that the thermoelectric conversion material layer is in direct contact with the pressure-sensitive adhesive layer,

(E) individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and

(F) peeling the chips of a thermoelectric conversion material.

2. The method according to claim 1 , wherein the individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material is carried out using a dicing blade or a laser.

3. The method according to claim 1 , further comprising:

irradiating the pressure-sensitive adhesive layer with energy ray to lower an adhesive strength of the pressure-sensitive adhesive layer to the thermoelectric conversion material layer or to the chip of a thermoelectric conversion material.

4. The method according to claim 1 , wherein the sacrificial layer comprises a resin or a release agent.

5. The method according to claim 1 , wherein a thickness of the sacrificial layer is from 10 nm to 10 μm.

6. The method according to claim 1 , wherein the substrate is a glass substrate.

7. The method according to claim 1 , wherein an annealing temperature is from 250 to 600° C.

8. The method according to claim 1 , further comprising:

forming a solder-receiving layer on the thermoelectric conversion material layer transferred in (D), or on the chip of a thermoelectric conversion material individualized in (E), or on the chip of a thermoelectric conversion material peeled in (F).

9. The method according to claim 8 , wherein the solder-receiving layer is formed of a metal material.

10. A method for producing a thermoelectric conversion module of a combination of plural chips of a thermoelectric conversion material produced in the method according to claim 1 , the method comprising:

(i) forming a first electrode on a first resin film,

(ii) forming a second electrode on a second resin film,

(iii) forming a bonding material layer 1 on the first electrode,

(iv) mounting one surface of the chip of a thermoelectric conversion material, on the bonding material layer 1 ,

(v) bonding one surface of the chip of a thermoelectric conversion material to the first electrode via the bonding material layer 1 , and

(vi) bonding the other surface of the chip of a thermoelectric conversion material after (v), to the second electrode, via a bonding material layer 2 .

11. A method for producing a thermoelectric conversion module of a combination of plural chips of a thermoelectric conversion material produced in the method according to claim 1 , the method comprising:

(I) forming a first electrode on a first resin film,

(II) forming a bonding material layer 1 on the first electrode,

(III) mounting one surface of the chip of a thermoelectric conversion material on the bonding material layer 1 ,

(IV) bonding one surface of the chip of a thermoelectric conversion material to the first electrode via the bonding material layer 1 , and

(V) bonding the other surface of the chip of a thermoelectric conversion material after (IV) to a resin film via a bonding material layer 3 .

12. A method for producing a thermoelectric conversion module of a combination of plural chips of a thermoelectric conversion material produced according to the method of claim 8 , the method comprising:

(xi) forming a first electrode on a first resin film,

(xii) forming a second electrode on a second resin film,

(xiii) forming a solder material layer on the first electrode,

(xiv) mounting one surface having a solder-receiving layer of the chip of a thermoelectric conversion material, on the solder material layer,

(xv) bonding one surface having the solder-receiving layer of the chip of a thermoelectric conversion material to the first electrode via the solder material layer,

(xvi) forming a solder-receiving layer on the other surface of the chip of a thermoelectric conversion material after (xv), and

(xvii) bonding the solder-receiving layer on the other surface of the chip of a thermoelectric conversion material after (xvi), to the second electrode via a solder material layer.

13. A method for producing a thermoelectric conversion module of a combination of plural chips of a thermoelectric conversion material produced according to the method of claim 8 , the method comprising:

(XI) forming a first electrode on a first resin film,

(XII) forming a solder material layer on the first electrode,

(XIII) mounting one surface having a solder-receiving layer of the chip of a thermoelectric conversion material, on the solder material layer,

(XIV) bonding one surface having a solder-receiving layer of the chip of a thermoelectric conversion material, to the first electrode via the solder material layer, and

(XV) bonding the other surface of the chip of a thermoelectric conversion material after: (XIV), to a resin film via a bonding material layer 3 .

14. The method according to claim 10 , wherein the bonding material layer 1 and the bonding material layer 2 each are independently formed of a solder material, an electroconductive adhesive or a sintering bond.

15. The method according to claim 11 , wherein the bonding material layer 3 is formed of a resin material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2021
From: KATO, KUNIHISA; MUTO, TSUYOSHI; TODAKA, MASAYA; KATSUTA, YUMA
To: LINTEC CORPORATION
Reel/Frame 055391/0898 →
Priority Claims (1)
JP JP2018-159259 · Aug 28, 2018 · national
Continuity (1)
Related Publication 20210257531A1 · Aug 19, 2021