Method and device for etching silicon oxide

1. A method of dry-etching silicon oxide, comprising

reacting silicon oxide with any one of the following (A) to (C):

(A) a gaseous hydrogen fluoride and a gaseous organic amine compound,

(B) a gaseous hydrogen fluoride salt of an organic amine compound, and

(C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound,

in a non-plasma state,

wherein a temperature of the silicon oxide upon the reaction is 50° C. or higher and 200° C. or lower,

the organic amine compound is represented by the following formula (1):

wherein N represents a nitrogen atom, R 1 represents a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom, and R 2 and R 3 each represent a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom, provided that: the hydrocarbon group, when it has a carbon number of three or more, optionally has a branched chain structure or a ring structure; the heteroatom in the hydrocarbon group is a nitrogen atom, an oxygen atom, a sulfur atom, or a phosphorus atom; R 1 and R 2 , when both of them are hydrocarbon groups having a carbon number of one or more, are optionally directly bonded to each other to form a ring structure; R 1 and R 2 , when they are directly bonded to each other via a double bond to form a ring structure, they optionally form an aromatic ring in the absence of R 3 ; and R 1 , R 2 , and R 3 are optionally hydrocarbon groups which are the same as or different from one another, and

the organic amine compound is a secondary amine or a tertiary amine, and

when a reaction product of the reaction sublimates into a gas as soon as it is generated, the silicon oxide is removed.

2. The method of dry-etching silicon oxide according to claim 1 ,

wherein reacting the silicon oxide comprises contacting the silicon oxide with any one of the following (a) to (c):

(a) the gaseous hydrogen fluoride and the gaseous organic amine compound,

(b) the gaseous hydrogen fluoride salt of the organic amine compound, and

(c) the gaseous hydrogen fluoride, the gaseous organic amine compound, and the gaseous hydrogen fluoride salt of the organic amine compound.

3. The method of dry-etching silicon oxide according to claim 1 ,

wherein a ratio of the organic amine compound to the gaseous hydrogen fluoride, as determined by dividing the number of moles of the organic amine compound by the number of moles of the gaseous hydrogen fluoride, is 0.001 or higher and 100 or lower.

4. The method of dry-etching silicon oxide according to claim 1 ,

wherein reacting the silicon oxide comprises:

contacting the silicon oxide with the gaseous organic amine compound and separately contacting the silicon oxide with the gaseous hydrogen fluoride.

5. The method of dry-etching silicon oxide according to claim 1 ,

wherein the secondary amine is at least one compound selected from the group consisting of dimethylamine, diethylamine, di-normal propylamine, diisopropylamine, dibutylamine, and di-tertiary butylamine.

6. The method of dry-etching silicon oxide according to claim 1 ,

wherein the tertiary amine is at least one compound selected from the group consisting of trimethylamine, dimethylethylamine, diethylmethylamine, and triethylamine.

7. The method of dry-etching silicon oxide according to claim 1 , further comprising selectively etching a silicon oxide film on a substrate to be treated where both the silicon oxide film and a silicon nitride film are exposed.

8. The method of dry-etching silicon oxide according to claim 7 ,

wherein a selection ratio of the silicon oxide film to the silicon nitride film is 2.5 or higher.

9. A method of producing a semiconductor device, comprising

etching a silicon oxide film on a semiconductor substrate including the silicon oxide film using the dry-etching method according to claim 1 .

10. The method of dry-etching silicon oxide according to claim 1 ,

wherein the temperature of the silicon oxide upon the reaction is 80° C. or higher and 200° C. or lower.