Etching method and etching apparatus
An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
1. An etching apparatus for selectively etching an etching target material of SiO 2 with respect to a non-etching material of SiN, comprising:
a chamber accommodating a substrate containing the etching target material of SiO 2 and the non-etching material of SiN;
a substrate support on which the substrate is placed in the chamber;
a gas supply mechanism configured to supply a basic gas and a fluorine-containing gas into the chamber;
an exhaust mechanism configured to exhaust the chamber;
a temperature controller configured to control a temperature of the substrate on the substrate support; and
a control unit,
wherein the control unit controls the gas supply mechanism, the exhaust mechanism, and the temperature controller to repeat a first period for supplying the basic gas, which is started first, and a second period for supplying the fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and to heat and remove a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
2. The etching apparatus of claim 1 , wherein the fluorine-containing gas is at least one selected from a group of HF gas, F 2 gas, ClF 3 gas, and NF 3 gas, and the basic gas is at least one selected from a group of NH 3 gas and amine gas.
3. The etching apparatus of claim 2 , wherein the fluorine-containing gas is the HF gas, the basic gas is the NH 3 gas, and the reaction product is (NH 4 ) 2 SiF 6 .
4. The etching apparatus of claim 3 , wherein the control unit controls a temperature of the substrate to 80° C. or lower using the temperature controller.
5. The etching apparatus of claim 4 , wherein the control unit controls the temperature of the substrate to be within a range from 60° C. to 80° C. using the temperature controller.
6. An etching apparatus for selectively etching an etching target material of SiO 2 with respect to a non-etching material of SiOCN, comprising:
a chamber accommodating a substrate containing the etching target material of SiO 2 and the non-etching material of SiOCN;
a substrate support on which the substrate is placed in the chamber;
a gas supply mechanism configured to supply a basic gas and a fluorine-containing gas into the chamber;
an exhaust mechanism configured to exhaust the chamber;
a temperature controller configured to control a temperature of the substrate on the substrate support; and
a control unit,
wherein the control unit controls the gas supply mechanism, the exhaust mechanism, and the temperature controller to repeat a first period for supplying the basic gas, which is started first, and a second period for supplying the fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and to heat and remove a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.