Plasma processing method and plasma processing apparatus
This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.
1. A plasma processing method for generating microwave plasma in a chamber and performing plasma processing on a substrate, comprising:
arranging the substrate in a region away from a microwave plasma generation region in the chamber;
setting a pressure in the chamber to 1 Torr (133.3 Pa) or higher;
introducing microwaves from a microwave plasma source and a processing gas containing a reducing gas into the chamber to generate microwave plasma, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate; and
applying a radio frequency (RF) power to the substrate to generate cathode-coupled plasma near the substrate and attractions near the substrate to the substrate,
wherein the substrate has a TiN film on a surface thereof, and the plasma processing is surface modification for reducing a resistivity of the TiN film using a hydrogen gas as the reducing gas.
2. The plasma processing method of claim 1 , wherein the pressure in the chamber is 1.5 Torr (200 Pa) or higher.
3. The plasma processing method of claim 1 , wherein a power density of the microwaves is 10 kW/m 2 or less.
4. The plasma processing method of claim 1 , wherein the microwave plasma source has a plurality of microwave radiation units configured to radiate microwaves into the chamber.
5. The plasma processing method of claim 1 , wherein a power density of the RF power is within a range of 0.3 kW/m 2 to 2.3 kW/m 2 .
6. The plasma processing method of claim 1 , wherein a distance from a microwave introducing unit of the microwave plasma source to the substrate in the chamber is within a range of 40 mm to 200 mm.