Semiconductor module, power conversion device, and manufacturing method of semiconductor module
A semiconductor module includes a semiconductor device that includes first and second fin bases having first and second connecting portions and a resin for sealing the outer peripheral side surfaces of first to fourth conductors, and a flow path forming body connected to the first and second connecting portions of the first and second fin bases. A first elastically deformed portion, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends of the first and second connecting portions becomes smaller than a distance in a thickness direction between intermediate portions of the first and second connecting portions. The resin is filled between the first and second connecting portions of the first and second fin bases are filled with the resin therebetween.
1. A semiconductor module, comprising:
a semiconductor device that includes
a semiconductor element,
a pair of conductors that is arranged so as to sandwich the semiconductor element and face each other in a thickness direction, and connected to the semiconductor element, respectively,
a first heat dissipation member that is arranged on a surface of a side opposite to the semiconductor element of one conductor of the pair of conductors via an insulating member, and includes a first connecting portion extending outward from an outer peripheral side surface of the one conductor,
a second heat dissipation member that is arranged on a surface of a side opposite to the semiconductor element of the other conductor of the pair of conductors via an insulating member, and includes a second connecting portion extending outward from an outer peripheral side surface of the other conductor, and
a resin for sealing the outer peripheral side surfaces of the pair of conductors; and
a flow path forming body that is connected to the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member of the semiconductor device,
wherein a first elastically deformed portion which is elastically deformed is provided such that a distance in a thickness direction between an outer peripheral end of the first connecting portion of the first heat dissipation member and an outer peripheral end of the second connecting portion of the second heat dissipation member becomes smaller than a distance in a thickness direction between an intermediate portion of the first connecting portion of the first heat dissipation member and an intermediate portion of the second connecting portion of the second heat dissipation member, and
wherein the resin is filled between the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member.
2. The semiconductor module according to claim 1 ,
wherein the first heat dissipation member and the second heat dissipation member include fins for heat dissipation, respectively.
3. The semiconductor module according to claim 1 ,
wherein each of the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member includes a flat portion between a root portion facing the outer peripheral side surface of the conductor and the outer peripheral end.
4. The semiconductor module according to claim 3 ,
wherein the root portion of each of the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member includes a second elastically deformed portion which is elastically deformed such that a distance in a thickness direction becomes larger toward the flat portion side.
5. The semiconductor module according to claim 3 ,
wherein the flow path forming body is bonded to each of the first connecting portion and the second connecting portion in the flat portion of each of the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member.
6. The semiconductor module according to claim 5 ,
wherein the flow path forming body is bonded to the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member by welding.
7. The semiconductor module according to claim 1 ,
wherein the flow path forming body includes a cover portion that is provided to cover a surface on a side opposite to the conductor of each of the first heat dissipation member and the second heat dissipation member, and forms a flow path for a refrigerant between the conductor of each of the first heat dissipation member and the second heat dissipation member and the opposite surface.
8. The semiconductor module according to claim 1 , comprising:
a plurality of the semiconductor devices,
wherein the flow path forming body includes a frame that connects the first connecting portions of the first heat dissipation members of the adjacent semiconductor devices to each other and the second connecting portions of the second heat dissipation members of the semiconductor devices to each other.
9. A power conversion device that accommodates a plurality of the semiconductor modules according to claim 1 in the flow path forming body.
10. A manufacturing method of the semiconductor module according to claim 1 , comprising:
bringing the outer peripheral end of each of the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member into contact with an abutting portion of a mold;
filling the resin between the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member; and
elastically deforming each of the first connecting portion of the first heat dissipation member and the second connecting portion of the second heat dissipation member such that a distance in a thickness direction between an intermediate portion of the first connecting portion of the first heat dissipation member and an intermediate portion of the second connecting portion of the second heat dissipation member becomes larger than a distance in a thickness direction between the abutting portions.