Plasma processing apparatus and lower stage
A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.
1. A plasma processing apparatus including a lower stage configured to generate plasma with an upper electrode, the lower stage comprising:
a lower dielectric body formed of ceramic;
a lower electrode embedded in the lower dielectric body; and
a heating element embedded in the lower dielectric body,
wherein a separation distance (d edge ) between a top surface of the lower dielectric body at an outer edge position thereof and the lower electrode is smaller than a separation distance (d center ) between the top surface of the lower dielectric body in a central region thereof and the lower electrode,
wherein the lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region,
wherein VHF power is supplied to a space between the upper electrode and the lower electrode, and
wherein, when a three-dimensional orthogonal coordinate system having a Z axis set in a downward direction of a normal in a thickness direction at a center of the lower electrode, an X axis perpendicular to the Z axis, and a Y axis perpendicular to both the Z axis and the X axis is set, and an origin of the coordinate system is a gravity center position of the top surface of the lower dielectric body, and
when it is assumed that a relative permittivity of the lower dielectric body is ε r , a speed of light is c, a frequency of VHF power is f, a circular constant is π, and a wave number of VHF power in the dielectric body is k(=(ε r ) 0.5 ·2πf/c),
a position (x, z) of the top surface of the lower electrode in an XZ plane is set to satisfy a following equation:
dx/dz=− 2/ xk ·cot( kz ).
2. The plasma processing apparatus of claim 1 , wherein a material of the ceramic is AlN.
3. The plasma processing apparatus of claim 2 , wherein the VHF power is introduced into the space between the upper electrode and the lower stage from a lateral side of the processing container as VHF waves.
4. The plasma processing apparatus of claim 3 , wherein the lower stage is driven to be movable in a vertical direction.
5. The plasma processing apparatus of claim 1 , wherein the VHF power is introduced into the space between the upper electrode and the lower stage from a lateral side of the processing container as VHF waves.
6. The plasma processing apparatus of claim 1 , wherein the lower stage is driven to be movable in a vertical direction.