Semiconductor device including superlattice with oxygen and carbon monolayers
A semiconductor device may include a semiconductor layer and a superlattice adjacent the semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.
1. A semiconductor device comprising:
a semiconductor layer; and
a superlattice adjacent the semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon, the second group of layers being above the first group of layers in the superlattice.
2. The semiconductor device of claim 1 wherein the semiconductor layer comprises a substrate below the superlattice; and further comprising a strained semiconductor layer above the superlattice.
3. The semiconductor device of claim 1 wherein the second group of layers of the superlattice comprises carbon and is devoid of oxygen.
4. The semiconductor device of claim 1 wherein the second group of layers of the superlattice comprises carbon and oxygen.
5. The semiconductor device of claim 1 further comprising source and drain regions on the semiconductor layer and defining a channel in the superlattice, and a gate above the superlattice.
6. The semiconductor device of claim 1 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a same conductivity type and a different dopant concentration than the second region.
7. The semiconductor device of claim 1 further comprising a metal layer above the superlattice.
8. The semiconductor device of claim 1 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a different conductivity type than the second region.
9. The semiconductor device of claim 1 wherein the base semiconductor portion comprises silicon.
10. A semiconductor device comprising:
a semiconductor layer; and
a superlattice adjacent the semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon and devoid of oxygen, the second group of layers being above the first group of layers in the superlattice.
11. The semiconductor device of claim 10 wherein the semiconductor layer comprises a substrate below the superlattice; and further comprising a strained semiconductor layer above the superlattice.
12. The semiconductor device of claim 10 further comprising source and drain regions on the semiconductor layer and defining a channel in the superlattice, and a gate above the superlattice.
13. The semiconductor device of claim 10 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a same conductivity type and a different dopant concentration than the second region.
14. The semiconductor device of claim 10 further comprising a metal layer above the superlattice.
15. The semiconductor device of claim 10 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a different conductivity type than the second region.
16. A semiconductor device comprising:
a semiconductor layer; and
a superlattice adjacent the semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon and oxygen, the second group of layers being above the first group of layers in the superlattice.
17. The semiconductor device of claim 16 wherein the semiconductor layer comprises a substrate below the superlattice; and further comprising a strained semiconductor layer above the superlattice.
18. The semiconductor device of claim 16 further comprising source and drain regions on the semiconductor layer and defining a channel in the superlattice, and a gate above the superlattice.
19. The semiconductor device of claim 16 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a same conductivity type and a different dopant concentration than the second region.
20. The semiconductor device of claim 16 further comprising a metal layer above the superlattice.
21. The semiconductor device of claim 16 wherein the superlattice divides the semiconductor layer into a first region and a second region, with the first region having a different conductivity type than the second region.