Non-color shifting multilayer structures
A multilayer thin film that reflects an omnidirectional structural color including a multilayer stack. The multilayer stack includes a reflector layer; a selective absorber layer extending over the reflector layer; an absorbing layer extending over the first layer; and a dielectric layer extending over the second layer. The multilayer thin film reflects a single narrow band of visible light when exposed to broadband electromagnetic radiation, the single narrow band of visible light having a center wavelength greater than 550 nm, and a visible full width at half maximum (FWHM) width of less than 200 nm. A color shift of the reflected single narrow band of visible light is less than 50 nm when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.
1. A multilayer thin film that reflects an omnidirectional structural color comprising:
a multilayer stack comprising:
a reflector layer;
a selective absorber layer extending over the reflector layer;
an absorbing layer extending over the selective absorber layer; and
a dielectric layer extending over the absorbing layer, wherein
the multilayer thin film reflects a single narrow band of visible light when exposed to broadband electromagnetic radiation, the single narrow band of visible light comprising:
a center wavelength greater than 550 nm;
a visible full width at half maximum (FWHM) width of less than 200 nm;
a color shift of the reflected single narrow band of visible light is less than 50 nm when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.
2. The multilayer thin film of claim 1 , wherein:
the selective absorber layer is formed from at least one of Fe 2 O 3 , Cu 2 O, amorphous Si, and crystalline Si;
the absorbing layer is formed from at least one of Cr, Ta, W, Mo, Ti, TiN, Nb, Co, Si, Ge, Ni, Pd, and V; and
the dielectric layer is formed from at least one of SiO 2 , TiO 2 , ZnS, and MgF 2 .
3. The multilayer thin film of claim 2 , wherein the selective absorbing layer is formed from Fe 2 O 3 , the absorbing layer is formed from Cr, and the dielectric layer is formed from ZnS.
4. The multilayer thin film of claim 2 , wherein the selective absorbing layer is formed from the Fe 2 O 3 , the absorbing layer is formed from W, and the dielectric layer is formed from ZnS.
5. The multilayer thin film of claim 1 , wherein the selective absorbing layer has a thickness between 20-80 nm, the absorbing layer has a thickness between 5-20 nm and the dielectric layer has a thickness between 30-300 nm.
6. The multilayer thin film of claim 1 , wherein the reflected single narrow band of visible light has a hue shift of less than or equal to 30° on the CIELAB color space when the multilayer thin film is viewed at angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.
7. The multilayer thin film of claim 6 , wherein the hue shift is less than 25° when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees.
8. The multilayer thin film of claim 1 , wherein the multilayer stack reflects electromagnetic radiation in the IR range.
9. The multilayer thin film of claim 1 , wherein the multilayer stack reflects a color with a chroma greater than or equal to 76 and less than or equal to 91.
10. A multilayer thin film that reflects an omnidirectional structural color comprising:
a multilayer stack comprising a reflector layer, a selective absorbing layer extending over the reflector layer, an absorbing layer extending over the selective absorbing layer and a dielectric layer extending of the absorbing layer;
wherein the multilayer thin film reflects visible light and IR radiation when exposed to broadband electromagnetic radiation, the reflected visible light being a single narrow band of visible light comprising:
a center wavelength greater than 550 nm;
a visible FWHM width of less than 200 nm; and
a color shift of the reflected single narrow band of visible light is less than 50 nm when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.
11. The multilayer thin film of claim 10 , wherein:
the selective absorbing layer is formed from at least one of Fe 2 O 3 , Cu 2 O, amorphous Si, and crystalline Si;
the absorbing layer is formed from at least one of Cr, Ta, W, Mo, Ti, TiN, Nb, Co, Si, Ge, Ni, Pd, and V; and
the dielectric layer is formed from at least one of SiO 2 , TiO 2 , ZnS, and MgF 2 .
12. The multilayer thin film of claim 10 , wherein the selective absorbing layer is formed from Fe 2 O 3 , the absorbing layer is formed from Cr, and the dielectric layer is formed from ZnS.
13. The multilayer thin film of claim 10 , wherein the selective absorbing layer is formed from Fe 2 O 3 , the absorbing layer is formed from W, and the dielectric layer is formed from ZnS.