IP Library Granted Patent US 12,289,839
Granted Patent B2
US 12,289,839 · App. 17/305,233 · Granted Apr 29, 2025

Process for localized repair of graphene-coated lamination stacks and printed circuit boards

Inventors: Elad Mentovich (Tel Aviv, IL); Boaz Atias (Maale Adumim, IL); Doron Naveh (Petah-Tikva, IL); Eilam Zigi Ben Smolinsky (Ramat Gan, IL); Adi Levi (Rosh HaAyin, IL)
Assignees: Mellanox Technologies, Ltd.; Bar-Ilan University
H05K3/225C01B32/188H05K1/0298H05K2203/107H05K2203/1105
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Quick Facts
Patent No.
US 12,289,839
App. No.
17/305,233
Granted
Apr 29, 2025
Kind
B2
Abstract

Processes for localized lasering of a lamination stack and graphene-coated printed circuit board (PCB) are disclosed. An example PCB may include a lamination stack, post-lamination, that may further include a core, an adhesive layer, and at least one graphene-metal structure. A top layer of graphene of the graphene-metal structure may have never been grown before the lamination process or may have been removed post-lamination such that a portion of the top layer of graphene is missing. The localized lasering process described herein may grow (for the first time) or re-grow the graphene layer of the exposed portion of the metal layer without adverse effects to the rest of the lamination stack or PCB and while promoting a uniform layer of graphene on the top surface. A process of growing graphene through application of molecular layer and a self-assembled monolayer (SAM), are also described herein.

Claims (22)

1. A method of repairing one or more layers of a lamination stack or Printed Circuit Board (PCB) comprising:

providing a layered structure, wherein an outer layer comprises a graphene-metal structure, and wherein the graphene-metal structure comprises a metal layer and an outer graphene layer disposed on the metal layer;

identifying a defect location in the outer graphene layer, wherein the defect location comprises an absence of graphene due to failed graphene growth or removal of the graphene post-growth on the metal layer, wherein the absence of graphene at the defect location exposes a portion of the metal layer;

preparing a surface of the outer graphene layer for repair, wherein the surface of the outer graphene layer comprises at least the defect location; and

applying localized heat to the defect location,

wherein application of the localized heat encourages growth of graphene in the defect location.

2. The method of claim 1 , wherein preparing the surface of the outer graphene layer comprises cleaning a surface of the metal layer in the defect location prior to the application of localized heat.

3. The method of claim 1 , wherein preparing the surface of the outer graphene layer comprises applying a molecular layer to the metal layer in the defect location.

4. The method of claim 3 , further comprising baking the layers.

5. The method of claim 4 , further comprising washing the lamination stack to clean an excess of the molecular layer.

6. The method of claim 1 , wherein preparing the surface of the outer graphene layer comprises applying a self-assembled monolayer to the metal layer in at least the defect location.

7. The method of claim 6 , further comprising washing the layers to clean the self-assembled monolayer.

8. The method of claim 7 , further comprising baking the layers.

9. The method of claim 1 , wherein the layered structure forms at least a portion of a Printed Circuit Board (PCB) and wherein the metal layer comprises a trace of the PCB.

10. The method of claim 1 , wherein the layered structure forms at least a portion of a lamination stack.

11. The method of claim 1 , wherein applying the localized heat comprises applying the localized heat via a laser.

12. The method of claim 11 , further comprising determining a local temperature for configuring the laser, wherein the local temperature is determined by a laser power density and a laser scan rate.

13. The method of claim 1 , wherein applying the localized heat comprises pulsing the localized heat.

14. The method of claim 1 , wherein applying the localized heat comprises continuously applying the localized heat.

15. The method of claim 1 , further comprising cooling the lamination stack at the defect location by pulsing the localized heat.

16. The method of claim 1 , wherein the absence of graphene at the defect location is caused by a scratch or mechanical damage.

17. The method of claim 1 , wherein the localized heat is incident on an outer two-dimensional material precursor of the defect location.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2021
From: MENTOVICH, ELAD; ATIAS, BOAZ
To: MELLANOX TECHNOLOGIES, LTD.
Reel/Frame 057048/0936 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2021
From: SMOLINSKY, EILAM ZIGI BEN; NAVEH, DORON; LEVI, ADI
To: BAR-ILAN UNIVERSITY
Reel/Frame 057037/0946 →
Continuity (2)
Provisional Application 63201910 · May 18, 2021
Related Publication 20220377907A1 · Nov 24, 2022
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