VIA structure and methods of forming the same
A method includes providing a substrate having a conductive column, a dielectric layer over the conductive column, and a plurality of sacrificial blocks over the dielectric layer, the plurality of sacrificial blocks surrounding the conductive column from a top view; depositing a sacrificial layer covering the plurality of sacrificial blocks, the sacrificial layer having a dip directly above the conductive column; depositing a hard mask layer over the sacrificial layer; removing a portion of the hard mask layer from a bottom of the dip; etching the bottom of the dip using the hard mask layer as an etching mask, thereby exposing a top surface of the conductive column; and forming a conductive material inside the dip, the conductive material being in physical contact with the top surface of the conductive column.
1. A method comprising:
forming a first electrode;
forming a plurality of sacrificial blocks over the first electrode, wherein a first sacrificial block from the plurality of sacrificial blocks overlaps the first electrode in a top view;
forming a first sacrificial layer covering the plurality of sacrificial blocks;
forming a trench through the first sacrificial layer to expose the first electrode;
forming a conductive material in the trench such that the conductive material extends to the first electrode; and
removing the plurality of sacrificial blocks after the forming of the conductive material in the trench.
2. The method of claim 1 , wherein the forming of the first electrode includes forming a second electrode, and
wherein the forming of the plurality of sacrificial blocks over the first electrode includes forming a second sacrificial block from the plurality of sacrificial blocks over the second electrode such that the second sacrificial block overlaps the second electrode in the top view.
3. The method of claim 1 , forming a dielectric layer directly on the first electrode, and
wherein the forming of the plurality of sacrificial blocks over the first electrode includes forming the plurality of sacrificial blocks directly on the dielectric layer.
4. The method of claim 1 , further comprising:
forming a phase-changing material directly on the conductive material after the removing of the plurality of sacrificial blocks; and
forming a second electrode on the phase-changing material.
5. The method of claim 1 , wherein at least three of the sacrificial blocks overlap the first electrode in a top view.
6. The method of claim 1 , wherein the forming of the first electrode includes forming a second electrode, the method further comprising:
forming a phase-changing material directly on the second electrode; and
removing the phase-changing material from the second electrode thereby exposing a portion of the second electrode.
7. The method of claim 1 , wherein the forming of the first sacrificial layer covering the plurality of sacrificial blocks includes forming the first sacrificial directly on the plurality of sacrificial blocks, and
wherein the first sacrificial layer and the plurality of sacrificial blocks are formed of the same material.
8. The method of claim 1 , wherein the forming of the plurality of sacrificial blocks over the first electrode includes:
forming a second sacrificial layer over the first electrode, and
patterning the second sacrificial layer to form the plurality of sacrificial blocks.
9. A method comprising:
forming a first electrode;
forming a plurality of sacrificial blocks over the first electrode, wherein none of the sacrificial blocks overlap the first electrode in a top view;
forming a first sacrificial layer covering the plurality of sacrificial blocks;
forming a trench through the first sacrificial layer to expose the first electrode;
forming a conductive material in the trench such that the conductive material extends to the first electrode; and
removing the plurality of sacrificial blocks after the forming of the conductive material in the trench.
10. The method of claim 9 , wherein the removing of the plurality of sacrificial blocks further includes removing a first portion of the conductive material such that a second portion of the conductive material remains disposed in the trench after the removing of the first portion of the conductive material.
11. The method of claim 10 , wherein the second portion of the conductive material has a width-to-height ratio ranging from about 0.2 to about 1.0.
12. The method of claim 9 , wherein the first sacrificial layer and the plurality of sacrificial blocks are formed of different materials.
13. The method of claim 9 , further comprising:
forming a dielectric layer over the first electrode prior to the forming of the plurality of sacrificial blocks over the first electrode; and
forming a hard mask layer over the first sacrificial layer.
14. The method of claim 13 , wherein the forming of the trench through the first sacrificial layer to expose the first electrode includes forming the trench through the hard mask layer and the dielectric layer.
15. The method of claim 13 , wherein the forming of the conductive material in the trench includes forming the conductive material on the hard mask layer.
16. A method comprising:
forming a plurality of dielectric blocks over a first electrode layer;
forming a sacrificial layer directly on the plurality of dielectric blocks;
forming a trench through the sacrificial layer that exposes the first electrode layer;
forming a conductive material in the trench;
after forming the conductive material in the trench, removing the sacrificial layer and the plurality of dielectric blocks;
forming a phase-changing material layer on the conductive material; and
forming a second electrode layer on the phase-changing material.
17. The method of claim 16 , wherein the forming of the trench through the sacrificial layer that exposes the first electrode layer includes forming the trench between two adjacent dielectric blocks from the plurality of dielectric blocks.
18. The method of claim 16 , further comprising forming a dielectric layer directly on the first electrode layer prior to forming the plurality of dielectric blocks over the first electrode layer, and
wherein the forming of the plurality of dielectric blocks over the first electrode layer includes forming the plurality of dielectric blocks directly on the dielectric layer, and
wherein the forming of the sacrificial layer directly on the plurality of dielectric blocks includes forming the sacrificial layer directly on the dielectric layer.
19. The method of claim 16 , further comprising forming a first conductive feature adjacent the first electrode layer, wherein the first electrode layer and the first conductive feature are at the same level, and
wherein the forming of the phase-changing material on the conductive material includes forming the phase-changing material over the first conductive feature and wherein the forming of the second electrode layer on the phase-changing material includes forming the second electrode layer over the first conductive feature, the method further comprising:
forming a dielectric layer over the first conductive feature;
removing a portion of the phase-changing material and a portion of the second electrode layer disposed over the first conductive feature;
removing a portion of the dielectric layer to expose a top surface of the conductive feature; and
forming a second conductive feature directly on the first conductive feature.
20. The method of claim 16 , wherein the removing of the sacrificial layer and the plurality of dielectric blocks further includes removing a first portion of the conductive material such that a second portion of the conductive material remains disposed in the trench after the removing of the first portion of the conductive material, and
wherein the second portion of the conductive material has a width-to-height ratio ranging from about 0.2 to about 1.0.