IP Library Granted Patent US 11,746,001
Granted Patent B2
US 11,746,001 · App. 17/308,340 · Granted Sep 5, 2023

Microelectromechanical microphone with membrane trench reinforcements and method of fabrication

Inventors: Pirmin Hermann Otto Rombach (Kongens Lyngby, DK); Kurt Rasmussen (Herlev, DK); Dennis Mortensen (Bagsvard, DK); Cheng-Yen Liu (Søborg, DK); Morten Ginnerup (Kongens Lyngby, DK); Jan Tue Ravnkilde (Hedehusene, DK); Jotaro Akiyama (Tokyo, JP)
Assignees: TDK Electronics AG; TDK Corporation
B81B3/0051B81C1/00158H04R1/08B81B2201/0257B81B2203/0127B81C2201/053B81C2201/056H04R2201/003
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Quick Facts
Patent No.
US 11,746,001
App. No.
17/308,340
Granted
Sep 5, 2023
Kind
B2
Abstract

A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that include a first lateral etch stop that includes a first corner radius and a second lateral etch stop that includes a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

Claims (28)

1. A microelectromechanical microphone device comprising:

a flexible plate that is deformable by a pressure wave, the flexible plate comprising a reverse bending edge comprising a first lateral etch stop comprising a first corner radius and a second lateral etch stop comprising a second corner radius different than the first corner radius;

a rigid plate mechanically coupled to the flexible plate, the rigid plate comprising openings configured to permit passage of the pressure wave; and

a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate, wherein the stoppage member is configured to limit motion of the flexible plate in response to the pressure wave.

2. The microelectromechanical microphone device of claim 1 , wherein the first corner radius is more than 100 nanometers, and wherein the second corner radius is more than 25 nanometers.

3. The microelectromechanical microphone device of claim 2 , wherein a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

4. The microelectromechanical microphone device of claim 1 , wherein the rigid plate comprises a stress distributor located between layers of polysilicon.

5. The microelectromechanical microphone device of claim 4 , wherein the stress distributor comprises a nitride layer.

6. A microelectromechanical microphone device comprising:

a flexible plate that is deformable by a pressure wave;

a rigid plate mechanically coupled to the flexible plate, the rigid plate comprising openings configured to permit passage of the pressure wave and a ring-shaped mechanical stress distributor; and

a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate, wherein the stoppage member is configured to limit motion of the flexible plate in response to the pressure wave including a threshold amplitude.

7. The microelectromechanical microphone device of claim 6 , wherein the stress distributor comprises nitride.

8. The microelectromechanical microphone device of claim 6 , wherein the rigid plate comprises a reverse bending edge comprising a first lateral etch stop comprising a first corner radius and a second lateral etch stop comprising a second corner radius different than the first corner radius.

9. The microelectromechanical microphone device of claim 8 , wherein the first corner radius is more than wo nanometers, and wherein the second corner radius is more than 25 nanometers.

10. The microelectromechanical microphone device of claim 8 , wherein a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

11. The microelectromechanical microphone device of claim 6 , wherein the stress distributor comprises oxide.

12. The microelectromechanical microphone device of claim 6 , wherein the stress distributor comprises a material layer.

13. A microelectromechanical microphone device comprising:

a flexible plate that is deformable by a pressure wave;

a rigid plate mechanically coupled to the flexible plate, the rigid plate comprising openings configured to permit passage of the pressure wave and a stress distributor; and

a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate, wherein the stoppage member is configured to limit motion of the flexible plate in response to the pressure wave including a threshold amplitude,

wherein the rigid plate comprises a reverse bending edge comprising a first lateral etch stop comprising a first corner radius and a second lateral etch stop comprising a second corner radius different than the first corner radius.

14. The microelectromechanical microphone device of claim 13 , wherein the first corner radius is more than 100 nanometers, and wherein the second corner radius is more than 25 nanometers.

15. The microelectromechanical microphone device of claim 13 , wherein a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

16. The microelectromechanical microphone device of claim 13 , wherein the stress distributor comprises nitride.

17. The microelectromechanical microphone device of claim 13 , wherein the stress distributor comprises oxide.

18. The microelectromechanical microphone device of claim 13 , wherein the stress distributor comprises a material layer.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2025
From: TDK CORPORATION
To: INVENSENSE, INC.
Reel/Frame 073080/0824 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2024
From: TDK ELECTRONICS AG
To: TDK CORPORATION
Reel/Frame 068279/0690 →
CORRECTIVE ASSIGNMENT TO CORRECT THE THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 056443 FRAME: 0108. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 20, 2021
From: AKIYAMA, JOTARO
To: TDK CORPORATION
Reel/Frame 058548/0597 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2021
From: ROMBACH, PIRMIN; RASMUSSEN, KURT; MORTENSEN, DENNIS; LIU, CHENG-YEN; GINNERUP, MORTEN; RAVNKILDE, JAN; AKIYAMA, JOTARO
To: TDK ELECTRONICS AG
Reel/Frame 056443/0108 →