Semiconductor device package having metal thermal interface material and method for forming the same

1. A method for forming a semiconductor device package, comprising:

bonding a semiconductor device to a first surface of a package substrate;

placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and a top surface of the semiconductor device;

heating the metal TIM to melt the metal TIM;

pressing the metal lid downward so that the molten metal TIM laterally flows toward a boundary of the semiconductor device along a first direction, and an outermost point of a lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device;

lifting the metal lid upward so that the molten metal TIM laterally flows toward a center of the top surface of the semiconductor device along a second direction opposite to the first direction, and the outermost point of the lateral sidewall of the molten metal TIM is within the boundary of the semiconductor device; and

bonding the metal lid to the semiconductor device through the metal TIM by cooling the molten metal TIM.

2. The method as claimed in claim 1 , wherein the metal lid is pressed down using a thermal compression bonding head, and the metal lid is lifted up using the thermal compression bonding head.

3. The method as claimed in claim 1 , wherein after pressing the metal lid and before lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is a convex arc, and the molten metal TIM has a first thickness in a vertical direction, and

wherein after lifting the metal lid, the molten metal TIM has a second thickness in the vertical direction, the second thickness being greater than the first thickness.

4. The method as claimed in claim 1 , wherein after lifting the metal lid, the outermost point of the lateral sidewall of the molten metal TIM is aligned with the boundary of the semiconductor device, or closer to the center of the top surface of the semiconductor device than the boundary of the semiconductor device in a lateral direction.

5. The method as claimed in claim 4 , wherein after lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is straight.

6. The method as claimed in claim 4 , wherein after lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is a concave arc.

7. The method as claimed in claim 1 , further comprising forming a buffer layer on the top surface of the semiconductor device before the metal TIM is provided over the top surface of the semiconductor device.

8. The method as claimed in claim 1 , further comprising coating the metal TIM with a flux layer before the metal TIM is provided between the metal lid and the top surface of the semiconductor device.

9. The method as claimed in claim 8 , wherein after the metal lid is bonded to the semiconductor device through the metal TIM, a gap is formed between a bottom surface of the metal lid and the first surface of the package substrate, and the method further comprises:

providing a cleaning fluid into a space between the metal lid and the package substrate through the gap to remove a flux residue.

10. The method as claimed in claim 9 , further comprising:

applying adhesive to the gap between the bottom surface of the metal lid and the first surface of the package substrate, after the removal of the flux residue.

11. The method as claimed in claim 1 , further comprising:

providing an adhesive layer between a bottom surface of the metal lid and the first surface of the package substrate.

12. The method as claimed in claim 1 , wherein the metal TIM is a solder-based TIM.

13. The method as claimed in claim 1 , wherein the heating of the metal TIM, the pressing of the metal lid, the lifting of the metal lid, and the bonding of the metal lid are performed in an environment filled with inert gas.

14. The method as claimed in claim 1 , wherein the heating of the metal TIM, the pressing of the metal lid, the lifting of the metal lid, and the bonding of the metal lid are performed in one chamber.

15. A method for forming a semiconductor device package, comprising:

bonding a semiconductor device to a first surface of a package substrate;

placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and a top surface of the semiconductor device;

heating the metal TIM to melt the metal TIM;

pressing the metal lid downward so that the molten metal TIM laterally flows toward a boundary of the semiconductor device, and an outermost point of a lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device;

lifting the metal lid upward so that the molten metal TIM laterally flows back, and an outermost point of the lateral sidewall of the molten metal TIM is within the boundary of the semiconductor device; and

bonding the metal lid to the semiconductor device through the metal TIM by cooling the molten metal TIM, wherein after the metal lid is bonded to the semiconductor device through the metal TIM, a gap is formed between a bottom surface of the metal lid and the first surface of the package substrate, the gap extends from an inner wall of the metal lid to an outer wall of the metal lid, and no adhesive is provided in the gap.

16. The method as claimed in claim 15 , wherein after lifting the metal lid, the outermost point of the lateral sidewall of the molten metal TIM is aligned with the boundary of the semiconductor device, or closer to a center of the top surface of the semiconductor device than the boundary of the semiconductor device in a lateral direction.

17. The method as claimed in claim 16 , wherein after lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is a concave arc, and the lateral sidewall of the molten metal TIM comprises two end points and an intermediate point between the two end points, wherein the two end points are connected to the metal lid and the semiconductor device, respectively, and closer to the boundary of the semiconductor device than the intermediate point in a lateral direction.

18. The method as claimed in claim 17 , wherein the two end points of the lateral sidewall of the molten metal TIM are aligned with the boundary of the semiconductor device, or offset from the boundary of the semiconductor device toward the center of the top surface of the semiconductor device.

19. The method as claimed in claim 16 , wherein after lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is a straight, and the lateral sidewall of the molten metal TIM is aligned with the boundary of the semiconductor device, or offset from the boundary of the semiconductor device toward the center of the top surface of the semiconductor device.

20. A method for forming a semiconductor device package, comprising:

bonding a semiconductor device to a first surface of a package substrate;

placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and a top surface of the semiconductor device;

heating the metal TIM to melt the metal TIM;

pressing the metal lid downward so that the molten metal TIM laterally flows toward a boundary of the semiconductor device;

lifting the metal lid upward so that the molten metal TIM laterally flows back, wherein after lifting the metal lid, a shape of the lateral sidewall of the molten metal TIM in a longitudinal section is a concave arc, and an outermost point of the lateral sidewall of the molten metal TIM is within the boundary of the semiconductor device; and

bonding the metal lid to the semiconductor device through the metal TIM by cooling the molten metal TIM.