Semiconductor packages with stacked dies and methods of forming the same
A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.
1. A semiconductor package, comprising:
a first semiconductor die, having a front side and a backside opposite to the front side;
a second semiconductor die disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die, a front side of the second semiconductor die facing the first semiconductor die, wherein the backside of the first semiconductor die is between the front side of the first semiconductor die and the second semiconductor die;
a first bonding structure disposed between the first semiconductor die and the second semiconductor die, wherein an edge of the first bonding structure extends laterally beyond an edge of the first semiconductor die;
a second bonding structure disposed between the first bonding structure and the second semiconductor die, wherein an edge of the second bonding structure is aligned with an edge of the second semiconductor die; and
a plurality of bumps, disposed at the front side of the first semiconductor die and physically contacting first die pads of the first semiconductor die, wherein a size of the first semiconductor die is less than a size of the second semiconductor die.
2. The semiconductor package of claim 1 , wherein the first die pads comprise aluminum pads.
3. The semiconductor package of claim 1 , wherein the first bonding structure is bonded to the second bonding structure through hybrid bonding.
4. The semiconductor package of claim 1 , further comprising redistribution patterns disposed at the front side of the first semiconductor die and aside the first die pads of the first semiconductor die.
5. The semiconductor package of claim 1 , further comprising:
a first dielectric encapsulation layer laterally encapsulating the first semiconductor die;
a second dielectric encapsulation layer disposed over the first semiconductor die and laterally encapsulating the second semiconductor die; and
a support member disposed over the second semiconductor die and the second dielectric encapsulation layer.
6. The semiconductor package of claim 1 , further comprising:
a first dielectric encapsulation layer laterally encapsulating the first semiconductor die;
a support member disposed over the second semiconductor die; and
a second dielectric encapsulation layer disposed over the first semiconductor die and laterally encapsulating the second semiconductor die and the support member.
7. The semiconductor package of claim 1 , further comprising a third semiconductor die disposed over and bonded to the second semiconductor die through hybrid bonding.
8. The semiconductor package of claim 1 , the size of the first semiconductor die is a width of the first semiconductor in a cross-sectional view, and wherein the size of the second semiconductor die is a width of the second semiconductor die in the cross-sectional view.
9. The semiconductor package of claim 1 , wherein the second bonding structure comprises a dummy bond pad.
10. The semiconductor package of claim 9 , further comprising:
a first dielectric encapsulation layer laterally encapsulating the first semiconductor die, wherein the dummy bond pad is over the first dielectric encapsulation layer.
11. A semiconductor package, comprising:
two first semiconductor dies, disposed side by side;
bumps, disposed at front sides of the first semiconductor dies and in physical contact with first die pads of the first semiconductor dies;
a first bonding structure, disposed at backsides of the first semiconductor dies and extending laterally beyond the first semiconductor dies, wherein the front side is opposite to the backside;
a bridge structure, disposed over the first bonding structure and between the first semiconductor dies; and
a dummy semiconductor die disposed over the first bonding structure and corresponding to one of the first semiconductor dies.
12. The semiconductor package of claim 11 , further comprising a second semiconductor die or a die stack disposed over the first bonding structure over one of the first semiconductor dies.
13. The semiconductor package of claim 12 , wherein the second semiconductor die or the die stack comprises a second bonding structure, wherein the second bonding structure is bonded to the first bonding structure through hybrid bonding.
14. The semiconductor package of claim 11 , wherein the dummy semiconductor die comprises a third bonding structure, wherein the third bonding structure is bonded to the first bonding structure through fusion bonding.
15. The semiconductor package of claim 11 , wherein the dummy semiconductor die comprises a third bonding structure, wherein the third bonding structure is bonded to the first bonding structure through hybrid bonding.
16. The semiconductor package of claim 12 , wherein the first semiconductor dies are between the bumps and the first bonding structure.
17. A method of forming a semiconductor package, comprising:
encapsulating a first semiconductor die with a first dielectric encapsulation layer, wherein the first semiconductor die comprises a first semiconductor substrate, first through substrate vias penetrating through the first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate and electrically connected to the first through substrate vias;
after encapsulating the first semiconductor die, bonding a second semiconductor die to a back surface of the first semiconductor die such that the back surface of the first semiconductor substrate is between a front surface of the first semiconductor substrate and the second semiconductor die, wherein the second semiconductor die is wider than the first semiconductor die, wherein the second semiconductor die comprises a die dummy die pad over the first dielectric encapsulation layer;
after bonding the second semiconductor die to the first semiconductor die, forming a plurality of first die pads over a front surface of the first semiconductor substrate and within a chip region of the first semiconductor die, wherein the plurality of first die pads physically connect to top metal patterns of the first interconnect structure; and
forming a plurality of bumps over the first die pads.
18. The method of claim 17 , further comprising forming a plurality of redistribution patterns aside the plurality of first die pads and outside of the chip region of the first semiconductor die.
19. The method of claim 17 , further comprising, before bonding the second semiconductor die to the back surface of the first semiconductor die:
forming a first bonding structure over the first semiconductor die and the first dielectric encapsulation layer.
20. The method of claim 19 , further comprising, after encapsulating the first semiconductor die and before forming the first bonding structure, forming a redistribution layer structure over the first semiconductor die and the first dielectric encapsulation layer.