Methods for independent memory bank maintenance and memory devices and systems employing the same
Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
1. A memory device comprising:
a plurality of memory cells; and
circuitry configured to:
store a plurality of values, each value of the plurality of values corresponding to a subset of memory cells of the plurality of memory cells, and
perform, when a first value of the plurality of values corresponding to a first subset of memory cells exceeds a first threshold, a first maintenance operation on the first subset of memory cells;
update the first value of the plurality of values based at least in part on performing the first maintenance operation;
perform, when a second value of the plurality of values corresponding to a second subset of memory cells exceeds a second threshold, a second maintenance operation on the second subset of memory cells; and
update the second value of the plurality of values based at least in part on performing the second maintenance operation.
2. The memory device of claim 1 , wherein the first maintenance operation and the second maintenance operation each comprise one of a refresh operation, a data state inversion operation, an overvoltaging operation, a wear-leveling operation, and a garbage collection operation.
3. The memory device of claim 1 , wherein the first maintenance operation is of a different kind than the second maintenance operation.
4. The memory device of claim 1 , wherein each of the plurality of values corresponds to a number of operations or a duration since a prior maintenance operation of the corresponding subset of memory cells of the plurality of memory cells.
5. The memory device of claim 1 , wherein the first threshold differs from the second threshold.
6. The memory device of claim 1 , wherein the circuitry is configured to perform the first maintenance operation and the second maintenance operation without a fixed frequency.
7. The memory device of claim 1 , wherein the plurality of memory cells comprise dynamic random access memory (DRAM) cells, ferroelectric random access memory (FeRAM) cells, magnetic random access memory (MRAM) cells, phase change memory (PCM) cells, or a combination thereof.
8. The memory device of claim 1 , wherein the first subset of memory cells and the second subset of memory cells comprise different kinds of memory cells.
9. The memory device of claim 1 , wherein the first subset of memory cells and the second subset of memory cells are comprised by a single integrated semiconductor die.
10. A method comprising:
performing a first maintenance operation on a first subset of a plurality of memory cells of a memory device based on a first metric corresponding to a first prior maintenance operation at the first subset exceeding a first threshold; and
performing a second maintenance operation on a second subset of the plurality of memory cells of the memory device based on a second metric corresponding to a second prior maintenance operation at the second subset exceeding a second threshold.
11. The method of claim 10 , wherein each of the first maintenance operation and the second maintenance operation include one of a refresh operation, a data state inversion operation, an overvoltaging operation, a wear-leveling operation, and a garbage collection operation.
12. The method of claim 10 , wherein the first maintenance operation is of a different kind than the second maintenance operation.
13. The method of claim 10 , wherein the first metric corresponds to a first number of operations or a first duration since the first prior maintenance operation and wherein the second metric corresponds to a second number of operations or a second duration since the second prior maintenance operation.
14. The method of claim 10 , wherein the first threshold differs from the second threshold.
15. The method of claim 10 , wherein the first maintenance operation and the second maintenance operation are performed without a fixed frequency.
16. A memory device, comprising:
a plurality of memory cells; and
circuitry configured to:
perform a first maintenance operation on a first subset of the plurality of memory cells based on a first metric corresponding to a first prior maintenance operation at the first subset exceeding a first threshold; and
perform a second maintenance operation on a second subset of the plurality of memory cells based on a second metric corresponding to a second prior maintenance operation at the second subset exceeding a second threshold.
17. The memory device of claim 16 , wherein the first maintenance operation and the second maintenance operation each comprise one of a refresh operation, a data state inversion operation, an overvoltaging operation, a wear-leveling operation, and a garbage collection operation.
18. The memory device of claim 16 , wherein the first metric corresponds to a first number of operations or a first duration since the first prior maintenance operation and wherein the second metric corresponds to a second number of operations or a second duration since the second prior maintenance operation.
19. The memory device of claim 16 , wherein the circuitry is configured to perform the first maintenance operation and the second maintenance operation without a fixed frequency.
20. The memory device of claim 16 wherein the plurality of memory cells comprise dynamic random access memory (DRAM) cells, ferroelectric random access memory (FeRAM) cells, magnetic random access memory (MRAM) cells, phase change memory (PCM) cells, or a combination thereof.