Method for reducing lateral film formation in area selective deposition
A substrate processing method includes providing a substrate containing a first film, a second film, and a third film, forming a first blocking layer on the first film, forming a second blocking layer on the second film, where the second blocking layer is different from the first blocking layer, and selectively forming a material film on the third film by vapor deposition. In one example, the first film, second film, and the third film are selected from the group consisting of a metal film, a metal-containing liner, and a dielectric film.
1. A substrate processing method, comprising:
providing a substrate containing a metal film, a metal-containing liner surrounding the metal film, and a dielectric film surrounding the metal-containing liner;
forming a blocking layer on the metal film;
depositing a material film on the dielectric film and on the metal-containing liner; and
removing the material film from the metal-containing liner to selectively form the material film on the dielectric film, wherein the removing laterally etches the material film from the metal-containing liner towards the dielectric film.
2. The method of claim 1 , wherein the depositing also deposits material film nuclei on the metal film, and the removing etches the material film nuclei from the metal film.
3. The method of claim 1 , wherein the metal-containing liner contains a metal compound that includes TiN, TaN or a metal that includes Co or Ru.
4. The method of claim 1 , wherein the metal-containing liner contains a laminate of TaN/Ta, TaN/Co, or TaN/Ir.
5. The method of claim 1 , wherein the metal film includes Cu, Al, Ta, Ti, W, Ru, Co, Ni, or Mo.
6. The method of claim 1 , wherein the dielectric film includes SiO 2 , a low-k material, or a high-k material.
7. The method of claim 1 , wherein the material film includes SiO 2 , a metal oxide, or a metal nitride.
8. The method of claim 5 , wherein the metal oxide contains HfO 2 , ZrO 2 , or Al 2 O 3 .
9. The method of claim 1 , wherein the blocking layer contains a self-assembled monolayer (SAM).
10. The method of claim 9 , wherein the SAM includes a thiol.
11. The method of claim 10 , wherein the thiol includes an alkane thiol or a fluoroalkane thiol.
12. The method of claim 11 , wherein the alkane thiol includes dodecanethiol and the fluoroalkane thiol includes perfluorodecanethiol.
13. The method of claim 9 , wherein the blocking layer includes a phosphonate and or a carboxylate.
14. A substrate processing method, comprising:
providing a substrate containing a metal film, a metal-containing liner surrounding the metal film, and a dielectric film surrounding the metal-containing liner, wherein the metal film includes Cu, Ru, or Co;
forming a blocking layer on the metal film, wherein the blocking layer includes a self-assembled monolayer that contains a thiol;
depositing a material film on the dielectric film and on the metal-containing liner; and
removing the material film from the metal-containing liner to selectively form the material film on the dielectric film, wherein the removing laterally etches the material film from the metal-containing liner towards the dielectric film.
15. The method of claim 14 , wherein the depositing also deposits material film nuclei on the metal film, and the removing etches the material film nuclei from the metal film.
16. The method of claim 14 , wherein the metal-containing liner contains a metal compound that includes TiN or TaN or a metal that includes Co or Ru.
17. The method of claim 14 , wherein the metal-containing liner contains a laminate of TaN/Ta, TaN/Co, or TaN/Ir.
18. The method of claim 14 , wherein the dielectric film includes SiO 2 , a low-k material, or a high-k material.
19. The method of claim 14 , wherein the material film includes SiO 2 , a metal oxide, or a metal nitride.
20. A substrate processing method, comprising:
providing a substrate containing a metal film, a metal-containing liner surrounding the metal film, and a dielectric film surrounding the metal-containing liner, wherein the metal film includes Cu, Ru, or Co, wherein the metal-containing liner contains a metal compound that includes TiN, TaN, a metal that includes Co or Ru, or a laminate of TaN/Ta, TaN/Co, or TaN/Ir;
forming a blocking layer on the metal film, wherein the blocking layer includes a self-assembled monolayer that contains a thiol;
depositing a material film on the dielectric film and on the metal-containing liner, wherein the material film includes SiO 2 , a metal oxide, or a metal nitride, and wherein the depositing also deposits material film nuclei on the metal film; and
removing the material film from the metal-containing liner and the material film nuclei from the metal film to selectively form the material film on the dielectric film, wherein the removing laterally etches the material film from the metal-containing liner towards the dielectric film.