Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
1. A semiconductor device comprising:
a transistor;
a first insulator comprising a first opening;
a first conductor over the first insulator, the first conductor comprising a second opening;
a second insulator over the first conductor, the second insulator comprising a third opening;
an oxide penetrating the first opening, the second opening, and the third opening;
a first nitride in the first opening; and
a second nitride in the third opening,
wherein the oxide comprises In and Zn,
wherein the oxide comprises a first region in the first opening, a second region in the second opening, and a third region in the third opening,
wherein the first nitride is in contact with the first region and the second nitride is in contact with the third region,
wherein the resistances of the first region and the third region are lower than the resistance of the second region, and
wherein the second region comprises a channel formation region of the transistor.
2. The semiconductor device according to claim 1 , further comprising:
a third insulator in contact with the oxide; and
a second conductor in contact with the third insulator,
wherein the oxide is positioned between the first conductor and the third insulator, and
wherein the third insulator is positioned between the oxide and the second conductor.
3. The semiconductor device according to claim 2 ,
wherein the first conductor serves as a first gate, and
wherein the second conductor serves as a second gate.
4. The semiconductor device according to claim 1 ,
wherein the oxide further comprises an element M, and Zn, and
wherein M is Al, Ga, Y, or Sn.
5. The semiconductor device according to claim 1 ,
wherein the oxide comprises a first layer, a second layer in contact with an inner wall of the first layer, and a third layer in contact with an inner wall of the second layer, and
wherein an energy gap of the second layer is narrower than an energy gap of the first layer and an energy gap of the third layer.
6. The semiconductor device according to claim 1 ,
wherein the first nitride and the second nitride each comprise at least one of silicon and a metal element.
7. The semiconductor device according to claim 1 ,
wherein the first region and the third region comprise a larger amount of at least one of hydrogen, nitrogen, and a metal element than the second region.
8. The semiconductor device according to claim 1 , further comprising:
a fourth insulator;
a fifth insulator; and
a sixth insulator,
wherein the fourth insulator is positioned between the first conductor and the oxide,
wherein the fifth insulator is positioned between the fourth insulator and the oxide, and
wherein the sixth insulator is positioned between the fifth insulator and the oxide.
9. The semiconductor device according to claim 8 ,
wherein at least one of the fourth insulator and the sixth insulator is an oxide comprising at least one of silicon, aluminum, and hafnium.
10. The semiconductor device according to claim 1 ,
wherein a diameter of the first opening and a diameter of the third opening are larger than a diameter of the second opening.
11. A semiconductor device comprising:
a first insulator comprising a first opening;
a first conductor over the first insulator, the first conductor comprising a second opening;
a second insulator over the first conductor, the second insulator comprising a third opening;
a second conductor penetrating the first opening, the second opening, and the third opening;
a third insulator penetrating the first opening, the second opening, and the third opening, the third insulator surrounding the second conductor;
an oxide penetrating the first opening, the second opening, and the third opening, the oxide surrounding the second conductor with the third insulator therebetween;
a first nitride in the first opening;
a second nitride in the third opening; and
a fourth insulator penetrating the first opening, the second opening, and the third opening, the fourth insulator surrounding the second conductor with the oxide provided therebetween,
wherein the fourth insulator is in contact with the first insulator, the first conductor, the second insulator, the oxide, the first nitride, and the second nitride,
wherein the third insulator is in contact with the oxide and the second conductor,
wherein the oxide comprises a first region in the first opening, a second region in the second opening, and a third region in the third opening,
wherein the first nitride is in contact with the first region and the second nitride is in contact with the third region,
wherein the resistances of the first region and the third region are lower than the resistance of the second region,
wherein the first conductor is a first gate, and
wherein the second conductor is a second gate.