Optoelectronic device package and method of manufacturing the same

1. An optoelectronic device package, comprising:

a first redistribution layer (RDL);

a processing die; and

an input/output (I/O) die,

wherein the processing die and the I/O die are electrically connected to each other through the first RDL, the processing die comprises an active surface and an opposing surface opposite to the active surface, the I/O die includes an active surface and an opposing surface opposite to the active surface, the active surface of the processing die and the active surface of the I/O die are closer to the first RDL than the opposing surface of the processing die and the opposing surface of the I/O die; and

an electronic integrated circuit (EIC) die arranged on the first RDL, wherein the EIC die includes an active surface and an opposing surface, and the active surface of the EIC die is farther from the first RDL than the opposing surface of the EIC die,

wherein the I/O die is disposed between the processing die and the EIC die, and an edge of the first RDL protrudes out of an outer edge of the EIC die from a top view in a direction away from the I/O die.

2. The optoelectronic device package according to claim 1 , wherein the edge of the first RDL protrudes out of an outer edge of the I/O die from a top view in a direction away from the processing die.

3. The optoelectronic device package according to claim 1 , wherein the I/O die and the EIC die are collectively encapsulated by a first encapsulation layer, and the I/O die, the EIC die, and the first encapsulation layer form an encapsulated electronic device.

4. The optoelectronic device package according to claim 3 , wherein the encapsulated electronic device further comprises:

a second RDL under the I/O die and the EIC die, and the second RDL is connected to the active surface of the I/O die; and

a third RDL over the I/O die and the EIC die, and the third RDL is electrically connected to the active surface of the EIC die.

5. The optoelectronic device package according to claim 4 , further comprising a plurality of through vias through the first encapsulation layer, and the plurality of through vias are electrically connected the second RDL to the third RDL.

6. The optoelectronic device package according to claim 4 , wherein a width of the first RDL is larger than a width of the second RDL or a width of the third RDL.

7. The optoelectronic device package according to claim 4 , further comprising a second encapsulation layer encapsulating the encapsulated electronic device and the processing die.

8. The optoelectronic device package according to claim 4 , further comprising a photonic die disposed over the third RDL, wherein a portion of the photonic die protrudes out of an edge of the encapsulated electronic device from a top perspective.

9. The optoelectronic device package according to claim 1 , wherein the active surface of the processing die is misaligned with the active surface of the I/O die.

10. The optoelectronic device package according to claim 1 , further comprising a die attach film between the first RDL and the EIC die.

11. An optoelectronic device package, comprising:

a first redistribution layer (RDL);

a first electronic die disposed over the first RDL, wherein an active surface of the first electronic die faces the first RDL;

a second electronic die disposed over the first RDL, wherein an active surface of the second electronic die is opposite to the first RDL;

a photonic die disposed over and electrically connected to the second electronic die;

a second RDL under the first electronic die and the second electronic die, and the second RDL is connected to the active surface of the first electronic die; and

a third RDL over the first electronic die and the second electronic die, and the third RDL is electrically connected to the active surface of the second electronic die.

12. The optoelectronic device package according to claim 11 , wherein the first electronic die comprises an I/O circuit, and the second electronic die comprises an electronic integrated circuit.

13. The optoelectronic device package according to claim 11 , wherein the first electronic die and the second electronic die are collectively encapsulated by a first encapsulation layer.

14. The optoelectronic device package according to claim 13 , further comprising:

a third electronic die disposed over the first RDL, wherein an active surface of the third electronic die faces the first RDL, and

a second encapsulation layer encapsulating the third electronic die and interfacing with the first encapsulation layer.

15. The optoelectronic device package according to claim 11 , wherein a projection of at least an edge of the first electronic die or at least an edge of the second electronic die is within a range of the first RDL from a top perspective.

16. An optoelectronic device package, comprising:

a first redistribution layer (RDL);

a processing die; and

an input/output (I/O) die,

wherein the processing die and the I/O die are electrically connected to each other through the first RDL, the processing die comprises an active surface and an opposing surface opposite to the active surface, the I/O die includes an active surface and an opposing surface opposite to the active surface, the active surface of the processing die and the active surface of the I/O die are closer to the first RDL than the opposing surface of the processing die and the opposing surface of the I/O die; and

an electronic integrated circuit (EIC) die arranged on the first RDL, wherein the EIC die includes an active surface and an opposing surface, and the active surface of the EIC die is farther from the first RDL than the opposing surface of the EIC die, and wherein the opposing surface of the EIC die, the active surface of the processing die and the active surface of the I/O die are misaligned with each other.