Semiconductor device, manufacturing method for semiconductor device, and electronic device
There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
1. A semiconductor device comprising:
a first section including a first semiconductor substrate and a first wiring layer, the first wiring layer including a first wiring;
a second section including a second semiconductor substrate and a second wiring layer, wherein the first section and the second section are stacked such that the first wiring layer and the second wiring layer face each other; and
a through electrode extending through the first section to the second wiring layer of the second section in a cross-sectional view, and electrically connecting the first wiring layer with the second wiring layer,
wherein, in the cross-sectional view, a first width of the first wiring at a first side of the first wiring is greater than a second width of the first wiring at a second side of the first wiring opposite the first side.
2. The semiconductor device of claim 1 , wherein the second side of the first wiring is closer to the first semiconductor substrate than the first side of the first wiring.
3. The semiconductor device of claim 1 , wherein the through electrode is electrically connected to the first wiring.
4. The semiconductor device of claim 1 , wherein the first wiring comprises a solid conductive material that extends from the first side to the second side.
5. The semiconductor device of claim 1 , wherein the second wiring layer further comprises a second wiring electrically connected to the through electrode.
6. The semiconductor device of claim 5 , wherein the second wiring contacts the through electrode.
7. The semiconductor device of claim 1 , wherein the through electrode is included in an opening that extends from the first section into the second section, and wherein a width of the opening in the second wiring layer is less than a width of the opening in the first wiring layer.
8. The semiconductor device of claim 7 , wherein a smallest width of the opening is in the second wiring layer.
9. The semiconductor device of claim 8 , wherein a largest width of the opening is in the first wiring layer.
10. The semiconductor device of claim 7 , wherein the through electrode tapers inward at a location in the opening that corresponds to a location of the first wiring.
11. An imaging device, comprising:
a semiconductor device including:
a first section including a first semiconductor substrate and a first wiring layer, the first wiring layer including a first wiring;
a second section including a second semiconductor substrate and a second wiring layer, wherein the first section and the second section are stacked such that the first wiring layer and the second wiring layer face each other; and
a through electrode extending through the first section to the second wiring layer of the second section in a cross-sectional view, and electrically connecting the first wiring layer with the second wiring layer,
wherein, in the cross-sectional view, a first width of the first wiring at a first side of the first wiring is greater than a second width of the first wiring at a second side of the first wiring opposite the first side.
12. The imaging device of claim 11 , wherein the second side of the first wiring is closer to the first semiconductor substrate than the first side of the first wiring.
13. The imaging device of claim 11 , wherein the through electrode is electrically connected to the first wiring.
14. The imaging device of claim 11 , wherein the first wiring comprises a solid conductive material that extends from the first side to the second side.
15. The imaging device of claim 11 , wherein the second wiring layer further comprises a second wiring electrically connected to the through electrode.
16. The imaging device of claim 15 , wherein the second wiring contacts the through electrode.
17. The imaging device of claim 11 , wherein the through electrode is included in an opening that extends from the first section into the second section, and wherein a width of the opening in the second wiring layer is less than a width of the opening in the first wiring layer.
18. The imaging device of claim 17 , wherein a smallest width of the opening is in the second wiring layer.
19. The imaging device of claim 18 , wherein a largest width of the opening is in the first wiring layer.
20. The imaging device of claim 17 , wherein the through electrode tapers inward at a location in the opening that corresponds to a location of the first wiring.