Field effect transistor with selective channel layer doping
A transistor device according to some embodiments includes a channel layer, a barrier layer on the channel layer, and source and drain contacts on the barrier layer, and a gate contact on the barrier layer between the source and drain contacts. The channel layer includes a sub-layer having an increased doping concentration level relative to a remaining portion of the channel layer. The presence of the sub-layer may reduce drain lag without substantially increasing gate lag.
1. A transistor device, comprising:
a substrate;
a channel layer formed on the substrate;
a barrier layer on the channel layer; and
a source contact and a drain contact on the barrier layer, and a gate contact that terminates on a surface of the barrier layer between the source and drain contacts;
wherein the channel layer comprises a first sub-layer, a second sub-layer on the first sub-layer, and a third sub-layer on the second sub-layer, wherein the first sub-layer is between the second sub-layer and the substrate and the second sub-layer is between the first sub-layer and the third sub-layer;
wherein the first sub-layer is doped with n-type dopants at a first doping concentration, the second sub-layer is doped with n-type dopants at a second doping concentration, and the third sub-layer is doped with n-type dopants at a third doping concentration, wherein the second doping concentration is greater than the first doping concentration.
2. The transistor device of claim 1 , wherein the second sub-layer has a thickness between 50 and 150 nm.
3. The transistor device of claim 2 , wherein the second sub-layer has a thickness of about 100 nm.
4. The transistor device of claim 1 , wherein the first sub-layer has a thickness greater than the second sub-layer.
5. The transistor device of claim 4 , wherein the first sub-layer has a thickness of about 100 nm.
6. The transistor device of claim 1 , wherein the second sub-layer is doped with an n-type dopant having a doping concentration level greater than 2E16 cm 3 .
7. The transistor device of claim 6 , wherein the first sub-layer is doped with an n-type dopant having a doping concentration level less than 2E16 cm −3 .
8. The transistor device of claim 1 , wherein the n-type dopant in the second sub-layer comprises silicon.
9. The transistor device of claim 1 , wherein the doping concentration level of the n-type dopant in the second sub-layer is between about 2E16 cm −3 and 4E16 cm −3 .
10. The transistor device of claim 1 , wherein the doping concentration level of the n-type dopant in the second sub-layer is about 3E16 cm −3 .
11. The transistor device of claim 1 , wherein the doping concentration level of the n-type dopant in the first sub-layer is about 1E16 cm −3 .
12. The transistor device of claim 1 , wherein the doping concentration level of the n-type dopant in the first sub-layer is below about 2E16 cm −3 .
13. The transistor device of claim 1 , wherein the channel layer has a total thickness of about 500 nm or less.
14. The transistor device of claim 1 , wherein the barrier layer and the channel layer cooperate to induce a two-dimensional electron gas (2DEG) in the channel layer.
15. The transistor device of claim 1 , wherein the channel layer comprises GaN.
16. The transistor device of claim 1 ,
wherein the third doping concentration is lower than the second doping concentration.
17. The transistor device of claim 16 , wherein the first sub- layer has a thickness greater than a thickness of the second sub-layer and greater than a thickness of the third sub-layer.
18. A transistor device, comprising:
a substrate;
a channel layer on the substrate;
a barrier layer on the channel layer; and
source and drain contacts on the barrier layer, and a gate contact that terminates on a surface of the barrier layer between the source and drain contacts;
wherein the channel layer comprises a first sub-layer having a first doping concentration level, a second sub-layer having a second doping concentration level on the first sub-layer, and a third sub-layer having a third doping concentration level on the second sub-layer opposite the first sub-layer, wherein the third sub-layer is adjacent the barrier layer, and wherein the first sub-layer is between the second sub-layer and the substrate, wherein each of the first sub-layer, the second sub-layer, and the third sub-layer is doped with an n-type dopant;
wherein the second doping concentration level is higher than the first doping concentration level and the third doping concentration level,
wherein the second doping concentration level is greater than 2E16 cm −3 , and
wherein the first and third doping concentration levels are each less than about 2E16 cm −3 .
19. The transistor device of claim 18 , wherein the second doping concentration level is between about 2E16 cm −3 and 4E16 cm −3 .
20. The transistor device of claim 19 , wherein the first and third doping concentration levels are each about 1E16 cm 3 , and wherein the second doping concentration level is about 3E16 cm −3 .
21. The transistor device of claim 18 , wherein the first and second sub-layers each have a thickness between about 50 nm and 150 nm.