Field effect transistor with source-connected field plate
A transistor device includes a semiconductor layer, source and drain contacts on the semiconductor layer, a gate contact on the semiconductor layer between the source and drain contacts, and a field plate over the semiconductor layer between the gate contact and the drain contact. The transistor device includes a first electrical connection between the field plate and the source contact that is outside an active region of the transistor device, and a second electrical connection between the field plate and the source contact.
1. A transistor device, comprising:
a semiconductor layer;
source and drain contacts on the semiconductor layer;
a gate contact on the semiconductor layer between the source and drain contacts;
a field plate over the semiconductor layer between the gate contact and the drain contact;
a source metallization in electrical contact with the source contact by a conductive via;
a first electrical connection between the field plate and the source metallization, wherein the first electrical connection is outside an active region of the transistor device; and
a second electrical connection between the field plate and the source metallization.
2. The transistor device of claim 1 , wherein the first electrical connection between the field plate and the source metallization does not cross over the gate contact.
3. The transistor device of claim 2 , wherein the first electrical connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
4. The transistor device of claim 1 , wherein the second electrical connection comprises a strap that extends from the field plate over the gate to the source metallization.
5. The transistor device of claim 4 , wherein the second electrical connection is located between 0 and 500 microns from an end of the gate opposite the first electrical connection.
6. The transistor device of claim 4 , wherein the second electrical connection is located between 10 and 50 microns from the end of the gate opposite the first electrical connection.
7. The transistor device of claim 4 , wherein the second electrical connection is located about 20 microns from the end of the gate opposite the first electrical connection.
8. The transistor device of claim 1 , wherein the second electrical connection is formed outside the active region of the device and does not cross over the gate.
9. The transistor device of claim 8 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the second connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
10. The transistor device of claim 1 , wherein the first electrical connection and the second electrical connection are formed as part of a source metallization process.
11. The transistor device of claim 1 , wherein the second electrical connection between the field plate and the source contact comprises a plurality of straps that extend from the field plate over the gate to the source metallization within the active region of the transistor device.
12. The transistor device of claim 1 , wherein the field plate comprises a first field plate, the transistor device further comprising:
a second field plate over the semiconductor layer between the gate contact and the drain contact;
a third electrical connection between the second field plate and the source contact, wherein the third electrical connection is outside an active region of the transistor device; and
a fourth electrical connection between the second field plate and the source contact.
13. The transistor device of claim 12 , wherein the third electrical connection between the second field plate and the source contact does not cross over the gate contact.
14. The transistor device of claim 13 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the third electrical connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
15. The transistor device of claim 12 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the fourth electrical connection comprises a strap that extends from the second field plate over the gate to the source metallization.
16. The transistor device of claim 1 , wherein the field plate comprises a first field plate, the transistor device further comprising:
a second field plate over the semiconductor layer between the gate contact and the drain contact; and
a third electrical connection between the second field plate and the source contact, wherein the third electrical connection is within an active region of the transistor device.
17. The transistor device of claim 16 , wherein the first field plate is between the second field plate and the source contact.
18. A method of forming a transistor device, comprising:
providing a semiconductor layer;
forming source and drain contacts on the semiconductor layer;
forming a gate contact on the semiconductor layer between the source and drain contacts;
forming a field plate over the semiconductor layer between the gate contact and the drain contact;
forming a source metallization in electrical contact with the source contact by a conductive via;
forming a first electrical connection between the field plate and the source metallization, wherein the first electrical connection is outside an active region of the transistor device; and
forming a second electrical connection between the field plate and the source metallization.
19. The method of claim 18 , wherein the first electrical connection between the field plate and the source metallization does not cross over the gate contact.
20. The method of claim 19 , wherein the first electrical connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
21. The method of claim 18 , wherein the second electrical connection comprises a strap that extends from the field plate over the gate to the source metallization.
22. The method of claim 21 , wherein the second electrical connection is located between 0 and 500 microns from an end of the gate opposite the first electrical connection.
23. The method of claim 21 , wherein the second electrical connection is located between 10 and 50 microns from the end of the gate opposite the first electrical connection.
24. The method of claim 21 , wherein the second electrical connection is located about 20 microns from the end of the gate opposite the first electrical connection.
25. The method of claim 18 , wherein the second electrical connection is formed outside the active region of the device and does not cross over the gate.
26. The method of claim 25 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the second connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
27. The method device of claim 18 , wherein the first electrical connection and the second electrical connection are formed as part of a source metallization process.
28. The method of claim 18 , wherein the second electrical connection between the field plate and the source contact comprises a plurality of straps that extend from the field plate over the gate to the source metallization within the active region of the transistor device.
29. The method of claim 18 , wherein the field plate comprises a first field plate, the transistor device further comprising:
a second field plate over the semiconductor layer between the gate contact and the drain contact;
a third electrical connection between the second field plate and the source contact, wherein the third electrical connection is outside an active region of the transistor device; and
a fourth electrical connection between the second field plate and the source contact.
30. The method of claim 29 , wherein the third electrical connection between the second field plate and the source contact does not cross over the gate contact.
31. The method of claim 30 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the third electrical connection comprises a field plate extension that extends outside the active region of the device in a loop to contact the source metallization.
32. The method of claim 29 , wherein the transistor device comprises a source metallization in electrical contact with the source contact, and wherein the fourth electrical connection comprises a strap that extends from the second field plate over the gate to the source metallization.
33. A transistor device, comprising:
a semiconductor layer;
source and drain contacts on the semiconductor layer;
a gate contact on the semiconductor layer between the source and drain contacts;
a field plate over the semiconductor layer between the gate contact and the drain contact;
a source metallization in electrical contact with the source contact by a conductive via;
a first electrical connection between the field plate and the source metallization, wherein the first electrical connection is outside an active region of the transistor device; and
a second electrical connection between the field plate and the source metallization that is within the active region of the device.