Methods and apparatus for NAND flash memory
Methods and apparatus for NAND flash memory are disclosed. In an embodiment, a method is provided for programming a NAND flash memory. The method includes precharging selected bit lines of selected memory cells with a bias voltage level while unselected bit lines maintain the inhibit voltage, applying a verify voltage to a selected word line that is coupled to the selected memory cells, and discharging the selected bit lines that are coupled to on-cells over a first time interval. The method also includes sensing a sensed voltage level on a selected bit line, loading the selected bit line with the inhibit voltage level when the sensed voltage level is above a threshold level and a program voltage when the sensed voltage level is equal to or below the threshold level, and repeating the operations of sensing and loading for each of the selected bit lines.
1. A method for programming a NAND flash memory, wherein the NAND flash memory comprises more than one group of bit lines, and wherein each group of bit lines is connected to a page buffer through bit line select gates, the method comprising:
storing program data in a first group of bit lines using bit line capacitances of the first group of bit lines;
reading the data from the bit line capacitances of the first group of bit lines by sequentially turning on selected bit line select gates to read the data into the page buffer using a sensing circuit of the page buffer;
storing the data from the page buffer into a second group of bit lines using bit line capacitances of the second group of bit lines; and
programming the data stored in the second group of bit lines into corresponding memory cells.
2. The method of claim 1 , wherein the first group of bit lines stores single bit data for single-level cell (SLC) operation.
3. The method of claim 1 , wherein the first group of bit lines stores multiple bits of data for multiple level cell operation.
4. The method of claim 1 , wherein the first group of bit lines stores two bits of data in two bit-line capacitances for multi-level cell (MLC) operation.
5. The method of claim 1 , wherein the first group of bit lines stores three bits of data in three bit-line capacitances for the triple-level cell (TLC) operation.
6. The method of claim 1 , wherein the operation of storing the data comprises storing the data into the bit line capacitances of the second group of bit lines by sequentially turning on selected bit line select gates to load the data from the page buffer into the second group of bit lines.
7. The method of claim 1 , further comprising performing a program-verify operation wherein the program data stored in the first group of bit lines is compared with the data read from the programmed cells in the second group of bit lines to determine next program data.
8. The method of claim 7 , wherein the program-verify operation is applied to at least one cell configured to store multiple bits of data in the flash memory.
9. The method of claim 7 , wherein for MLC operation, the program-verify operation compares program data stored in two bit line capacitances of the second group with the data read from the programmed cell in the first group to determine the next program data.
10. The method of claim 7 , wherein for TLC operation, the program-verify operation compares program data stored in three bit line capacitances of the second group with the data read from the programmed cell in the first group to determine the next program data.
11. A method for programming NAND flash memory, wherein the NAND flash memory comprises two or more groups of bit lines connected to two or more groups of select gates, respectively, and wherein the two or more groups of select gates are connected to two or more page buffers, respectively, the method comprising:
loading a first group of data into a first group of bit lines by:
loading the first group of data into a first page buffer;
enabling a first group of bit line select gates to load the first group data from the first page buffer into the first group of bit lines; and
storing the first group of data in bit line capacitances of the first group of bit lines;
loading a second group of data into a second group of bit lines by:
loading the second group of data into a second page buffer;
enabling a second group of bit line select gates to load the second group data from the second page buffer into the second group of bit lines; and
storing the second group of data in bit line capacitances of the second group of bit lines; and
applying a program pulse to program the data stored in all the bit line capacitances into the NAND flash memory.
12. The method of claim 11 , wherein before the operation of applying the program pulse, the method comprises loading one or more additional groups of data into one or more additional groups of bit lines by:
A. loading a next group of data into a next page buffer;
B. enabling a next group of bit line select gates to load the next group data from the next page buffer into the next group of bit lines;
C. storing the next group of data in bit line capacitances of the next group of bit lines; and
repeating the operations of A, B, and C until all the one or more additional groups of data are loaded into the one or more additional groups of bit lines, respectively.
13. The method of claim 11 , wherein the NAND flash memory comprises two sub-arrays, and wherein the method operates to alternate between loading data into bit lines coupled to the first sub-array and loading data into bit lines coupled to the second sub-array.
14. The method of claim 11 , wherein the NAND flash memory comprises more than two sub-arrays, and wherein the method operates to load data into bit lines coupled to the multiple sub-arrays in a sequential order from one sub-array to a next sub-array.
15. A method for reading NAND flash memory, wherein the NAND flash memory comprises two or more groups of bit lines connected to two or more groups of select gates, respectively, and wherein the two or more groups of select gates are connected to two or more page buffers, respectively, the method comprising:
reading data from selected memory cells of the NAND flash memory;
storing the data in bit line capacitances of bit lines coupled to the selected memory cells;
outputting the data by:
enabling a first group of bit line select gates to transfer a first group of data stored in bit line capacitances of a first group of bit lines to a first page buffer;
outputting the first group of data from the first page buffer;
enabling a second group of bit line select gates to transfer a second group of data stored in bit line capacitances of a second group of bit lines to a second page buffer; and
outputting the second group of data from the second page buffer; and
repeating the operation of outputting until all data stored in the bit line capacitances has been output from the page buffers.
16. The method of claim 15 , wherein the NAND flash memory comprises two sub-arrays, and wherein the method operates to alternate between outputting data from bit lines coupled to the first sub-array and outputting data from bit lines coupled to the second sub-array.
17. The method of claim 15 , wherein the NAND flash memory comprises more than two sub-arrays, and wherein the method operates to output data from bit lines coupled to the multiple sub-arrays in a sequential order from one sub-array to a next sub-array.