Power conversion device having semiconductor switching element

1. A power conversion device comprising:

a semiconductor switching element having a control electrode terminal and two main electrode terminals and configured to control a current flowing between the two main electrode terminals by a drive signal applied to the control electrode terminal, the semiconductor switching element further comprising a diode inverse-parallel connected to the two main electrode terminals; and

a drive circuit configured to generate the drive signal in response to an input signal and to turn on/off the semiconductor switching element by the drive signal,

wherein the drive circuit is configured to detect the current flowing between the two main electrode terminals of the semiconductor switching element at a timing at which the semiconductor switching element is turned off, and to adjust a drive capacity of the semiconductor switching element in response to the current flowing between the two main electrode terminals when the semiconductor switching element is turned off, wherein the drive capacity of the semiconductor switching element is reduced when a value of a magnitude of the current flowing between the two main electrode terminals of the semiconductor switching element detected by the drive circuit is equal to or smaller than a predetermined value, and

wherein the drive circuit comprises:

a current detection unit configured to output a selection signal based on a magnitude of the sense current, and

a switch unit configured to output a voltage signal for determining the drive capacity based on the selection signal,

wherein the current detection unit comprises:

a sense voltage generation circuit configured to convert the sense current output from the sense terminal into a voltage and to output the voltage as a sense voltage,

a comparator configured to compare the sense voltage and a reference voltage and to output a result of the comparison,

a latch circuit configured to hold a signal indicative of the result of the comparison in synchronization with the input signal, and

a selection circuit configured to output the selection signal based on an output of the latch circuit, wherein the selection circuit comprises an inverter to invert the output of the latch circuit.

2. The power conversion device according to claim 1 ,

wherein the semiconductor switching element has a sense terminal configured to output a sense current corresponding to the current flowing between the two main electrode terminals, and

wherein the drive circuit is configured to detect the current flowing between the two main electrode terminals by the sense current output from the sense terminal.

3. The power conversion device according to claim 2 , wherein the drive circuit comprises: a drive unit configured to generate the drive signal by using the voltage signal and the input signal.

4. The power conversion device according to claim 1 ,

wherein the sense voltage generation circuit is constituted by a resistor element inserted between the sense terminal and a reference potential, and is configured to output a voltage that is generated as the sense current output from the sense terminal flows through the resistor element.

5. The power conversion device according to claim 4 ,

wherein the sense voltage generation circuit further comprises a constant current source, and

wherein a current output from the constant current source is caused to flow through the resistor element to increase the sense voltage by a predetermined voltage.

6. The power conversion device according to claim 5 ,

wherein a second resistor element is inserted between the constant current source and the resistor element, and

wherein the sense voltage is extracted from a connection point of the constant current source and the second resistor element.

7. A power conversion device comprising:

a semiconductor switching element having a control electrode terminal and two main electrode terminals and configured to control a current flowing between the two main electrode terminals by a drive signal applied to the control electrode terminal; and

a drive circuit configured to generate the drive signal in response to an input signal and to turn on/off the semiconductor switching element by the drive signal,

wherein

the drive circuit is configured to detect the current flowing between the two main electrode terminals of the semiconductor switching element at a timing at which the semiconductor switching element is turned off, and to adjust a drive capacity,

when the current flowing between the two main electrode terminals of the semiconductor switching element, which is detected at the timing at which the semiconductor switching element is turned off, becomes equal to or smaller than a predetermined value, the drive circuit reduces the drive capacity,

the semiconductor switching element has a sense terminal configured to output a sense current corresponding to the current flowing between the two main electrode terminals,

the drive circuit is configured to detect the current flowing between the two main electrode terminals by the sense current output from the sense terminal,

the drive circuit comprises:

a current detection unit configured to output a selection signal based on a magnitude of the sense current,

a switch unit configured to output a voltage signal for determining the drive capacity based on the selection signal, and

a drive unit configured to generate the drive signal by using the voltage signal and the input signal,

the current detection unit comprises:

a sense voltage generation circuit configured to convert the sense current output from the sense terminal into a voltage and to output the voltage as a sense voltage,

a comparator configured to compare the sense voltage and a reference voltage and to output a result of the comparison,

a latch circuit configured to hold a signal indicative of the result of the comparison in synchronization with the input signal, and

a selection circuit configured to output the selection signal based on an output of the latch circuit,

the sense voltage generation circuit is constituted by a resistor element inserted between the sense terminal and a reference potential, and is configured to output a voltage that is generated as the sense current output from the sense terminal flows through the resistor element,

the sense voltage generation circuit further comprises a constant current source,

a current output from the constant current source is caused to flow through the resistor element to increase the sense voltage by a predetermined voltage,

a second resistor element is inserted between the constant current source and the resistor element, and

the sense voltage is extracted from a connection point of the constant current source and the second resistor element,

wherein the switch unit comprises:

a plurality of voltage dividing resistor elements inserted in series between a voltage source and the reference potential, and

a switch element configured to select any one of at least two different voltages generated in the plurality of voltage dividing resistor elements by the selection signal and to output the selected voltage as the voltage signal.

8. The power conversion device according to claim 7 ,

wherein the drive unit comprises a current mirror circuit configured to turn on the semiconductor switching element by supplying a drive signal of a current corresponding to the voltage signal to the control electrode terminal of the semiconductor switching element in synchronization with the input signal, and a switch circuit configured to turn off the semiconductor switching element by extracting charges accumulated in the control electrode terminal of the semiconductor switching element.

9. A power conversion device comprising:

a semiconductor switching element having a control electrode terminal and two main electrode terminals and configured to control a current flowing between the two main electrode terminals by a drive signal applied to the control electrode terminal;

a drive circuit configured to generate the drive signal in response to an input signal and to turn on/off the semiconductor switching element by the drive signal,

wherein

the drive circuit is configured to detect the current flowing between the two main electrode terminals of the semiconductor switching element at a timing at which the semiconductor switching element is turned off, and to adjust a drive capacity,

when the current flowing between the two main electrode terminals of the semiconductor switching element, which is detected at the timing at which the semiconductor switching element is turned off, becomes equal to or smaller than a predetermined value, the drive circuit reduces the drive capacity,

the semiconductor switching element has a sense terminal configured to output a sense current corresponding to the current flowing between the two main electrode terminals,

the drive circuit is configured to detect the current flowing between the two main electrode terminals by the sense current output from the sense terminal,

the drive circuit comprises:

a current detection unit configured to output a selection signal based on a magnitude of the sense current,

a switch unit configured to output a voltage signal for determining the drive capacity based on the selection signal, and

a drive unit configured to generate the drive signal by using the voltage signal and the input signal,

the current detection unit comprises:

a sense voltage generation circuit configured to convert the sense current output from the sense terminal into a voltage and to output the voltage as a sense voltage,

a comparator configured to compare the sense voltage and a reference voltage and to output a result of the comparison,

a latch circuit configured to hold a signal indicative of the result of the comparison in synchronization with the input signal, and

a selection circuit configured to output the selection signal based on an output of the latch circuit,

a first bias circuit inserted between the comparator and the sense voltage generation circuit and configured to generate a bias voltage by connecting a constant current source and a MOSFET in series; and

a second bias circuit inserted between the comparator and a voltage source configured to generate the reference voltage, and configured to generate a bias voltage by connecting a constant current source having a temperature characteristic similar to the constant current source and a MOSFET in series,

wherein the first bias circuit is configured to add the bias voltage to the sense voltage and to supply the same to a non-inverting input terminal of the comparator, and

wherein the second bias circuit is configured to add the bias voltage to the reference voltage and to supply the same to an inverting input terminal of the comparator.