Low resistivity metal contact stack
Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
1. A method of fabricating a microelectronic device, the method comprising depositing a metal contact stack by:
depositing a metal cap layer comprising tungsten on a substrate by a DC physical vapor deposition (PVD) process or an RF PVD process; and
depositing a molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer, wherein the substrate comprises a gate electrode on a gate dielectric layer on a surface of the substrate and a structure having at least one sidewall and a bottom, the at least one sidewall including a dielectric and the bottom including a metal, and the metal cap layer is deposited selectively on the bottom of the structure relative to the at least one sidewall.
2. The method of claim 1 , wherein the metal cap layer is deposited at a temperature in the range of 300° C. to 350° C.
3. The method of claim 1 , wherein the metal cap layer is deposited to a thickness in a range of from 10 Å to 200 Å.
4. The method of claim 1 , wherein the ALD process is a thermal process.
5. The method of claim 1 , wherein the molybdenum conductor layer is deposited selectively on the metal cap layer.
6. The method of claim 1 , wherein the ALD process comprises exposing the substrate sequentially to a reactant and a molybdenum precursor.
7. The method of claim 6 , wherein the molybdenum precursor comprises a molybdenum halide or molybdenum oxyhalide.
8. The method of claim 7 , wherein the molybdenum precursor comprises one or more of molybdenum pentachloride or molybdenum dichloride dioxide.
9. The method of claim 6 , wherein the reactant comprises hydrogen (H 2 ).
10. The method of claim 6 , wherein the molybdenum conductor layer is deposited to a thickness in the range of from 1 nm to 50 nm.
11. The method of claim 6 , wherein the ALD process occurs at a temperature in the range of 450° C. to 500° C.
12. The method of claim 1 , wherein the metal contact stack has a sheet resistance less than or equal to 20 μΩ-cm at a total thickness of 100 Å.
13. The method of claim 12 , wherein the structure has a width in a range of 10 nm to 12 nm.
14. The method of claim 12 , wherein the structure is filled in a bottom-up manner.
15. A method of depositing a metal contact stack having a sheet resistance in a range of from 10 μΩ-cm to 20 μΩ-cm, the method comprising:
a. depositing a metal cap layer on a substrate by DC physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising tungsten at a direct current of 35 KW, a bias of 1160 W, and
depositing a molybdenum conductor layer by thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to a molybdenum precursor;
b. depositing a metal cap layer on a substrate by RF physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising tungsten at a radio frequency of 3 KW, a bias of 50 W and a pressure of 230 mTorr; and
depositing a molybdenum conductor layer by thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to a molybdenum precursor; or
c. depositing a metal cap layer on a substrate by RF physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising molybdenum at a radio frequency of 3 KW, a bias of 50 W and a pressure of 100 mTorr, and
depositing a molybdenum conductor layer by thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to a molybdenum precursor.