Different diffusion break structures for three-dimensional stacked semiconductor device
A multi-stack semiconductor device formed to cover a plurality of gate pitches includes: a 1 st transistor; a 2 nd transistor formed at a right side of the 1 st transistor, and isolated from the transistor by a 1 st portion of a diffusion break structure; a 3 rd transistor formed vertically above or below the 1 st transistor; and a 4 th transistor formed at a right side of the 3 rd transistor, and isolated from the 3 rd transistor by a 2 nd portion of the diffusion break structure, wherein the 1 st portion and the 2 nd portion of the diffusion break structure are formed of different material compositions or have different physical dimensions.
1. A multi-stack semiconductor device formed to cover a plurality of gate pitches, comprising:
a 1 st transistor;
a 2 nd transistor formed at a right side of the 1 st transistor, and isolated from the 1 st transistor by a 1 st portion of a diffusion break structure;
a 3 rd transistor formed vertically above or below the 1 st transistor; and
a 4 th transistor formed at a right side of the 3 rd transistor, and isolated from the 3 rd transistor by a 2 nd portion of the diffusion break structure, wherein the 1 st portion of the diffusion break structure covers a space corresponding to approximately one gate pitch or more in a 1 st direction, and the 2 nd portion of the diffusion break structure covers a space corresponding to approximately one gate structure or dummy gate structure or less in the 1 st direction.
2. The multi-stack semiconductor device of claim 1 , wherein the 1 st portion and the 2 nd portion of the diffusion break structure have a same material composition.
3. The multi-stack semiconductor device of claim 2 , wherein each of the 1 st transistor and the 2 nd transistor is one of a p-type transistor and an n-type transistor, and each of the 3 rd transistor and the 4 th transistor is the other of the p-type transistor and the n-type transistor.
4. The multi-stack semiconductor device of claim 3 , wherein the same material composition of the 1 st portion and the 2 nd portion of the diffusion break structure has a characteristic of increasing one of compressive stress and tensile stress applied to the 1 st to 4 th transistors.
5. The multi-stack semiconductor device of claim 4 , wherein each of the 1 st to 4 th transistors is a nanosheet transistor or a fin field-effect transistor (finFET).
6. The multi-stack semiconductor device of claim 3 , wherein the 1 st portion of the diffusion break structure forms a double diffusion break (DBB) structure, and the 2 nd portion of the diffusion break structure forms a single diffusion break (SDB) structure.
7. The multi-stack semiconductor device of claim 6 , wherein the 1 st portion of the diffusion break structure forms a double diffusion break (DDB) structure that occupies a space corresponding to approximately two gate structures or dummy gate structures adjacent to each other and an active region therebetween in the 1 st direction, the two gate structures or dummy gate structures adjacent to each other being formed between a gate structure of the 1 st transistor and a gate structure of the 2 nd transistor, wherein the 2 nd portion of the diffusion break structure forms a single diffusion break (SDB) structure that occupies a space corresponding to approximately one gate structure or dummy gate structure between the 3 rd transistor and the 4 th transistor in the 1 st direction, and
wherein the one gate structure or dummy gate structure is formed vertically above or below one of the two gate structures or dummy gate structures adjacent to each other.
8. The multi-stack semiconductor device of claim 1 , wherein a source/drain region of the 4 th transistor vertically overlaps the 2 nd portion of the diffusion break structure.
9. A multi-stack semiconductor device formed to cover a plurality of gate pitches, comprising:
a 1 st transistor;
a 2 nd transistor formed at a right side of the 1 st transistor, and isolated from the 1 st transistor by a 1 st portion of a diffusion break structure;
a 3 rd transistor formed vertically above or below the 1 st transistor; and
a 4 th transistor formed at a right side of the 3 rd transistor, and isolated from the 3 rd transistor by a 2 nd portion of the diffusion break structure,
wherein the 1 st portion and the 2 nd portion of the diffusion break structure are formed of different material compositions or have different physical dimensions.
10. The multi-stack semiconductor device of claim 9 ,
wherein a material composition of the 1 st portion of the diffusion break structure has a characteristic of increasing one of compressive stress and tensile stress applied to the 1 st transistor and the 2 nd transistor, and
wherein a material composition of the 2 nd portion of the diffusion break structure has a characteristic of increasing the other of the compressive stress and the tensile stress.
11. The multi-stack semiconductor device of claim 9 ,
wherein the 1 st portion of the diffusion break structure covers a space corresponding to approximately one gate pitch or more, and
wherein the 2 nd portion of the diffusion break structure covers a space corresponding to approximately one gate structure or dummy gate structure or less.
12. The multi-stack semiconductor device of claim 9 , wherein each of the 1 st transistor and the 2 nd transistor is one of a p-type transistor and an n-type transistor, and
wherein each of the 3 rd transistor and the 4 th transistor is the other of the p-type transistor and the n-type transistor.