Solid-state imaging device, manufacturing method thereof, and electronic apparatus
A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.
1. An imaging device, comprising:
a semiconductor substrate including a first plane and a second plane opposite to the first plane, wherein the first plane corresponds to a light incident surface of the semiconductor substrate;
a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate;
a first separation region disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross-sectional view;
a color filter disposed above the first plane in the cross-sectional view;
a first insulation layer disposed between the first plane of the semiconductor substrate and the color filter in the cross-sectional view;
a second insulation layer disposed between the first insulation layer and the color filter in the cross-sectional view; and
a wiring layer disposed under the second plane of the semiconductor substrate in the cross-sectional view,
wherein the first separation region includes a first material and a second material,
wherein the first material includes a material different from the first insulation layer and different from the second insulation layer, and
wherein the second material includes a material different from the first insulation layer and different from the second insulation layer.
2. The imaging device of claim 1 , further comprising:
a light shielding portion disposed above the first insulation layer in the cross-sectional view.
3. The imaging device of claim 1 , wherein the first material is different from the second material.
4. The imaging device of claim 1 , wherein the first material includes silicon.
5. The imaging device of claim 1 , wherein a first part of a surface of the first insulation layer that faces the first material is coplanar with a second part of the surface of the first insulation layer that faces the first plane of the semiconductor substrate.
6. The imaging device of claim 1 , wherein the first insulation layer includes a material different from the second insulation layer.
7. The imaging device of claim 2 , wherein the first insulation layer contacts the first material and the second material in the cross-sectional view.
8. The imaging device of claim 7 , further comprising:
a second separation region disposed adjacent to the first separation region, wherein the second separation region includes the first material and the second material.
9. The imaging device of claim 1 , wherein the first separation region includes a trench.
10. The imaging device of claim 2 , wherein the light shielding portion includes titanium.
11. The imaging device of claim 10 , wherein the light shielding portion includes titanium nitride.
12. The imaging device of claim 2 , wherein the light shielding portion includes a first layer and a second layer.
13. The imaging device of claim 12 , wherein the first layer includes titanium nitride, and the second layer includes tungsten.
14. The imaging device of claim 12 , wherein the second layer is disposed above the first layer.
15. An electronic apparatus comprising:
a semiconductor substrate including a first plane and a second plane opposite to the first plane, wherein the first plane corresponds to a light incident surface of the semiconductor substrate;
a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate;
a first separation region disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross-sectional view;
a color filter disposed above the first plane in the cross-sectional view;
a first insulation layer disposed between the first plane of the semiconductor substrate and the color filter in the cross-sectional view;
a second insulation layer disposed between the first insulation layer and the color filter in the cross-sectional view; and
a wiring layer disposed under the second plane of the semiconductor substrate in the cross-sectional view,
wherein the first separation region includes a first material and a second material,
wherein the first material includes a material different from the first insulation layer and different from the second insulation layer, and
wherein the second material includes a material different from the first insulation layer and different from the second insulation layer.
16. The electronic apparatus of claim 15 , further comprising:
a light shielding portion disposed above the first insulation layer in the cross-sectional view.
17. The electronic apparatus of claim 15 , wherein the first material is different from the second material.
18. The electronic apparatus of claim 15 , wherein the first material includes silicon.
19. The electronic apparatus of claim 15 , wherein a first part of a surface of the first insulation layer that faces the first material is coplanar with a second part of the surface of the first insulation layer that faces the first plane of the semiconductor substrate.
20. The electronic apparatus of claim 15 , wherein the first insulation layer includes a material different from the second insulation layer.