IP Library › Granted Patent US 12,310,267
Granted Patent B2
US 12,310,267 · App. 17/346,358 · Granted May 20, 2025

ReRAM module with intermediate electrode

Inventors: Juntao Li (Cohoes, NY); Kangguo Cheng (Schenectady, NY); Kevin W. Brew (Niskayuna, NY); Dexin Kong (Redmond, WA)
Assignee: International Business Machines Corporation
H10N70/841H10N70/011H10N70/24H10N70/823
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Quick Facts
Patent No.
US 12,310,267
App. No.
17/346,358
Granted
May 20, 2025
Kind
B2
Abstract

A resistive RAM module comprises a source electrode and an intermediate electrode that is formed on the source electrode. The intermediate electrode has a closed-curve profile. The resistive RAM module also comprises a memristor element that is deposited on the intermediate electrode. The resistive RAM module also comprises a sink electrode that is in contact with the memristor element. The intermediate electrode is electrically between the source electrode and the memristor element and the memristor element is electrically between the intermediate electrode and the sink electrode.

Claims (10)

1. A resistive RAM module comprising:

a source electrode;

an intermediate electrode that is formed on the source electrode;

a memristor element that is deposited on the intermediate electrode such that the intermediate electrode is electrically between the source electrode and the memristor element; and

a sink electrode that is in contact with the memristor element such that the memristor element is electrically between the intermediate electrode and the sink electrode;

wherein the intermediate electrode and the memristor element have a closed-curve profile with at least one point.

2. The resistive RAM module of claim 1 , wherein the closed-curve profile is a concave closed-curve profile.

3. The resistive RAM module of claim 2 , wherein the sink electrode forms a negative pattern of the concave closed-curve profile.

4. The resistive RAM module of claim 2 , wherein the concave closed-curve profile has four points.

5. The resistive RAM module of claim 1 , further comprising a nitride cap that is formed on the intermediate electrode and the memristor element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2021
From: LI, JUNTAO; CHENG, KANGGUO; BREW, KEVIN W.; KONG, DEXIN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 056528/0488 →
Continuity (1)
Related Publication 20220399494A1 · Dec 15, 2022
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