4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof
An electronic device includes a semiconductor body of silicon carbide, and a body region at a first surface of the semiconductor body. A source region is disposed in the body region. A drain region is disposed at a second surface of the semiconductor body. A doped region extends seamlessly at the entire first surface of the semiconductor body and includes one or more first sub-regions having a first doping concentration and one or more second sub-regions having a second doping concentration lower than the first doping concentration. Thus, the device has zones alternated to each other having different conduction threshold voltage and different saturation current.
1. An electronic device, comprising:
a semiconductor body of silicon carbide (SiC) having a first and a second surface, opposite to one another along a direction;
a body region, having a first conductivity, extending in the semiconductor body at the first surface;
a source region, having a second conductivity opposite to the first conductivity, extending in the body region at the first surface of the semiconductor body;
a drain region, having the second conductivity, extending at the second surface of the semiconductor body; and
a doped region, having the second conductivity, extending continuously at the entire first surface of the semiconductor body, and including one or more first sub-regions having a first doping density and one or more second sub-regions having a second doping density lower than the first doping density.
2. The device according to claim 1 , wherein the one or more first sub-regions are alternated with the one or more second sub-regions, the one or more first and second sub-regions forming zones alternated to each other having different conduction threshold voltage or different saturation current.
3. The device according to claim 1 , wherein a ratio between a conduction threshold voltage of each of the one or more second sub-region and a conduction threshold voltage of each of the one or more first sub-region is within a range from 1.1 to 2.5.
4. The device according to claim 1 , wherein the one or more first and the one or more second sub-regions have a depth, in the semiconductor body from the surface, within a range from 10 nm to 0.1 μm.
5. The device according to claim 1 , wherein the one or more first sub-regions are contiguous to, and electrically connected to, the respective one or more second sub-regions.
6. The device according to claim 1 , wherein the one or more second sub-regions occupy a volume of the doped region within a range from 50% to 80%.
7. The device according to claim 1 , further comprising a gate structure on the first surface of the semiconductor body, the gate structure including:
a gate dielectric layer,
a metal gate layer on the gate dielectric layer, and
an insulating layer surrounding the metal gate layer,
wherein the doped region extends within the source regions, the body region and below the gate structure.
8. The device according to claim 1 , wherein the semiconductor body is of 4H—SiC.
9. The device according to claim 1 , wherein each of the one or more first and the one or more second sub-regions extends into the semiconductor body from the surface to a same depth.
10. A method for manufacturing an electronic device, comprising:
forming a body region, having a first conductivity, in a semiconductor body of silicon carbide (SiC) at a first surface, the semiconductor body having a second surface opposite to the first surface along a direction;
forming a source region, having a second conductivity opposite to the first conductivity, in the body region at the first surface of the semiconductor body;
forming a drain region, having the second conductivity, at the second surface; and
forming a doped region, having the second conductivity, extending seamlessly at the entire first surface of the semiconductor body, the forming of the doped region including:
forming one or more first sub-regions having a first doping density; and
forming one or more second sub-regions having a second doping density lower than the first doping density.
11. The method according to claim 10 , wherein the one or more first sub-regions are alternated with the one or more second sub-regions and form zones alternated to each other having different conduction threshold voltage or different saturation current.
12. The method according to claim 10 , wherein each of the one or more first sub-region and each of the one or more second sub-region is formed so that a ratio between a conduction threshold voltage of each second sub-region and a conduction threshold voltage of each first sub-region is within a range from 1.1 to 2.5.
13. The method according to claim 10 , wherein the one or more first and the one or more second sub-regions have a depth, in the semiconductor body from the surface, within a range from 10 nm to 0.1 μm.
14. The method according to claim 10 , wherein forming the doped region includes:
forming a uniformly doped region having the second doping density by carrying out an unmasked implant at the entire first surface;
arranging an implant mask on the first surface, the implant mask exposing superficial regions of the semiconductor body at which it is desired to form the one or more first sub-regions; and
forming selectively doped regions having the first doping concentration by carrying out a masked implant, using the implant mask.
15. The method according to claim 10 , wherein the one or more first sub-regions are contiguous to, and electrically connected to, the respective one or more second sub-regions.
16. The method according to claim 10 , wherein the one or more second sub-regions occupy a volume of the doped region ranging from 50% to 80%.
17. A device, comprising:
a semiconductor body having a first surface, and a second surface opposite the first surface along a direction;
a body region, having a first conductivity, extending in the semiconductor body at the first surface;
a source region, having a second conductivity opposite to the first conductivity, extending in the body region at the first surface of the semiconductor body;
a drain region, having the second conductivity, extending at the second surface of the semiconductor body;
a doped region, having the second conductivity, extending continuously at the entire first surface of the semiconductor body, the doped region including a first sub-region having a first doping density and a second sub-region having a second doping density lower than the first doping density;
a first gate structure on the first sub-region; and
a second gate structure on the second sub-region.
18. The device according to claim 17 , wherein each of the first and the second sub-regions extends into the semiconductor body from the surface to a same depth.