Integrated circuit structure including multi-length source/drain contacts
An IC structure includes first, second, and third circuits. The first circuit includes a first semiconductor fin, a first gate electrode extending across the first semiconductor fin, and a first gate dielectric layer spacing the first gate electrode apart from the first semiconductor fin. The second circuit includes a second semiconductor fin, a second gate electrode extending across the second semiconductor fin, and a second gate dielectric layer spacing the second gate electrode apart from the second semiconductor fin. The third circuit includes a third semiconductor fin, a third gate electrode extending across the third semiconductor fin, and a third gate dielectric layer spacing the third gate electrode apart from the third semiconductor fin. The first gate dielectric layer has a greater thickness than the second gate dielectric layer. The third semiconductor fin has a smaller width than the second semiconductor fin.
1. An IC structure, comprising:
a first circuit comprising a plurality of first semiconductor fins and a first source/drain contact extending a first length across the plurality of first semiconductor fins; and
a second circuit comprising a plurality of second semiconductor fins and a second source/drain contact extending a second length across one of the plurality of second semiconductor fins,
wherein a number of the plurality of first semiconductor fins is greater than a number of the plurality of second semiconductor fins, and the first length of the first source/drain contact is greater than the second length of the second source/drain contact.
2. The IC structure of claim 1 , further comprising:
an isolation gate structure separating longitudinal ends of the plurality of first semiconductor fins from longitudinal ends of the plurality of second semiconductor fins.
3. The IC structure of claim 2 , wherein the isolation gate structure non-overlaps the plurality of first semiconductor fins and the plurality of second semiconductor fins.
4. The IC structure of claim 2 , wherein the isolation gate structure is made of one or more dielectric materials.
5. The IC structure of claim 1 , wherein the number of the plurality of first semiconductor fins is double the number of the plurality of second semiconductor fins.
6. The IC structure of claim 1 , wherein a ratio of the first length of the first source/drain contact to the second length of the second source/drain contact is in a range from 1.1 to 3.
7. An IC structure, comprising:
a first circuit comprising a plurality of first semiconductor fins, a first source/drain contact extending a first length across the plurality of first semiconductor fins, and a second source/drain contact extending a second length across the plurality of first semiconductor fins, wherein the first length of the first source/drain contact is greater than the second length of the second source/drain contact; and
a second circuit comprising a plurality of second semiconductor fins and a third source/drain contact extending a third length across one of the plurality of second semiconductor fins,
wherein a number of the plurality of first semiconductor fins is greater than a number of the plurality of second semiconductor fins, and the first length of the first source/drain contact is greater than the third length of the third source/drain contact.
8. The IC structure of claim 7 , further comprising:
a dummy gate interposing the plurality of first semiconductor fins and the plurality of second semiconductor fins.
9. The IC structure of claim 8 , wherein the dummy gate includes a dielectric material.
10. The IC structure of claim 7 , wherein the first circuit further comprises a plurality of gate structures extending across the plurality of first semiconductor fins, and a plurality of gate spacers respectively enclosing the plurality of gate structures.
11. The IC structure of claim 10 , wherein one of the plurality of gate spacers has opposite outermost sidewalls respectively in contact with the first source/drain contact and the second source/drain contact.
12. The IC structure of claim 7 , wherein the second length of the second source/drain contact is greater than the third length of the third source/drain contact.
13. The IC structure of claim 7 , wherein the second circuit further comprises a fourth source/drain contact extending a fourth length across said one of the plurality of second semiconductor fins, and the fourth length of the fourth source/drain contact is greater than the third length of the third source/drain contact.
14. The IC structure of claim 13 , wherein the fourth length of the fourth source/drain contact is greater than the second length of the second source/drain contact.
15. The IC structure of claim 13 , wherein a distance from the fourth source/drain contact to the first circuit is greater than a distance from the third source/drain contact to the first circuit.
16. The IC structure of claim 7 , wherein a distance from the first source/drain contact to the second circuit is greater than a distance from the second source/drain contact to the second circuit.
17. An IC structure, comprising:
a first circuit comprising a plurality of first semiconductor fins and one or more first gate structures extending across the plurality of first semiconductor fins;
a dielectric dummy gate having a first side interfacing longitudinal ends of the plurality of first semiconductor fins; and
a second circuit comprising a plurality of second semiconductor fins and one or more second gate structures extending across the plurality of second semiconductor fins, wherein the dielectric dummy gate has a second side interfacing longitudinal ends of the plurality of second semiconductor fins, a number of the plurality of first semiconductor fins is greater than a number of the plurality of second semiconductor fins, and a number of the one or more first gate structures is greater than a number of the one or more second gate structures.
18. The IC structure of claim 17 , wherein a difference between the number of the plurality of first semiconductor fins and the number of the plurality of second semiconductor fins is greater than a difference between the number of the one or more first gate structures and the number of the one or more second gate structures.
19. The IC structure of claim 17 , wherein one of the plurality of first semiconductor fins has a width greater than a width of one of the plurality of second semiconductor fins.
20. The IC structure of claim 17 , further comprising:
a spacer surrounding four sides of the dielectric dummy gate from a top view.