Display device and method of manufacturing the display device

1. A display device comprising:

a substrate comprising a component area and a display area adjacent to the component area, the component area including a transmission area;

a first thin-film transistor comprising a first semiconductor layer arranged on the substrate and a first gate electrode overlapping the first semiconductor layer, the first semiconductor layer including a silicon semiconductor;

a first insulating layer covering the first gate electrode and overlapping the transmission area;

a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode overlapping the second semiconductor layer, the second semiconductor layer including an oxide semiconductor;

a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area;

an intermediate insulating layer between the first insulating layer and the second insulating layer;

a conductive pattern between the intermediate insulating layer and the first insulating layer;

a display element arranged on the second insulating layer and spaced apart from the transmission area; and

a pattern layer arranged between the intermediate insulating layer and the second insulating layer and overlapping the component area,

wherein the transmission hole exposes an upper surface of the intermediate insulating layer, and

the pattern layer comprises an opening that entirely overlaps the transmission hole and exposes the upper surface of the intermediate insulating layer.

2. The display device of claim 1 , wherein the display area surrounds the component area.

3. The display device of claim 1 , wherein the second semiconductor layer is arranged between the intermediate insulating layer and the second insulating layer, and

the first thin-film transistor further comprises any one of a first source electrode and a first drain electrode arranged above the second insulating layer and electrically connected to the first semiconductor layer through a lower contact hole of the first insulating layer, an intermediate contact hole of the intermediate insulating layer, and a first upper contact hole of the second insulating layer.

4. The display device of claim 1 , wherein the second thin-film transistor further comprises any one of a second source electrode and a second drain electrode arranged above the second insulating layer and electrically connected to the second semiconductor layer through a second upper contact hole of the second insulating layer.

5. The display device of claim 1 ,

wherein the pattern layer and the second semiconductor layer include a same material.

6. The display device of claim 1 , wherein a second thickness of the second insulating layer is greater than a first thickness of the first insulating layer.

7. The display device of claim 1 , further comprising a bottom metal layer arranged between the substrate and the first semiconductor layer and overlapping the component area,

wherein at least one of the first thin-film transistor and the second thin-film transistor overlaps the bottom metal layer.

8. The display device of claim 1 , further comprising a component overlapping the component area; and

a second display element,

wherein the display element overlaps the component area, and

the second display element overlaps the display area.