IP Library › Granted Patent US 12,262,598
Granted Patent B2
US 12,262,598 · App. 18/378,656 · Granted Mar 25, 2025

Display device and method of manufacturing the display device

Inventors: Jaybum Kim (Yongin-si, KR); Myeongho Kim (Yongin-si, KR); Yeonhong Kim (Yongin-si, KR); Kyoungseok Son (Yongin-si, KR); Seungjun Lee (Yongin-si, KR); Seunghun Lee (Yongin-si, KR); Junhyung Lim (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H10K59/124H01L27/1225H01L27/1251H01L27/1255H10K59/1213H10K59/1216H10K71/00H01L25/167H01L25/18H10K59/1201H10K59/121H10K59/65
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Quick Facts
Patent No.
US 12,262,598
App. No.
18/378,656
Granted
Mar 25, 2025
Kind
B2
Abstract

A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

Claims (24)

1. A display device comprising:

a substrate comprising a component area and a display area adjacent to the component area, the component area including a transmission area;

a first thin-film transistor comprising a first semiconductor layer arranged on the substrate and a first gate electrode overlapping the first semiconductor layer, the first semiconductor layer including a silicon semiconductor;

a first insulating layer covering the first gate electrode and overlapping the transmission area;

a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode overlapping the second semiconductor layer, the second semiconductor layer including an oxide semiconductor;

a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area;

a conductive pattern between the first insulating layer and the second insulating layer;

a display element arranged on the second insulating layer and spaced apart from the transmission area; and

a pattern layer arranged between the first insulating layer and the second insulating layer and overlapping the component area,

wherein the transmission hole exposes an upper surface of the first insulating layer, and

the pattern layer comprises an opening that overlaps the transmission hole and exposes the upper surface of the first insulating layer.

2. The display device of claim 1 , wherein the conductive pattern includes a same material as the second semiconductor layer.

3. The display device of claim 1 , wherein the display area surrounds the component area.

4. The display device of claim 1 , wherein the second semiconductor layer is arranged between the first insulating layer and the second insulating layer, and

the first thin-film transistor further comprises any one of a first source electrode and a first drain electrode arranged above the second insulating layer and electrically connected to the first semiconductor layer through a lower contact hole of the first insulating layer, and a first upper contact hole of the second insulating layer.

5. The display device of claim 1 , wherein the second thin-film transistor further comprises any one of a second source electrode and a second drain electrode arranged above the second insulating layer and electrically connected to the second semiconductor layer through a second upper contact hole of the second insulating layer.

6. The display device of claim 1 , wherein the pattern layer and the second semiconductor layer include a same material.

7. The display device of claim 1 , wherein a second thickness of the second insulating layer is greater than a first thickness of the first insulating layer.

8. The display device of claim 1 , further comprising a bottom metal layer arranged between the substrate and the first semiconductor layer and overlapping the component area,

wherein at least one of the first thin-film transistor and the second thin-film transistor overlaps the bottom metal layer.

9. The display device of claim 1 , further comprising a component overlapping the component area,

wherein the display element comprises a first display element and a second display element,

the first display element overlaps the display area, and

the second display element overlaps the component area.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2023
From: KIM, JAYBUM; KIM, MYEONGHO; KIM, YEONHONG; SON, KYOUNGSEOK; LEE, SEUNGJUN; LEE, SEUNGHUN; LIM, JUNHYUNG
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 065189/0373 →
Priority Claims (1)
KR 10-2020-0178939 · Dec 18, 2020 · national
Continuity (2)
Continuation 17353640 · Jun 21, 2021
Related Publication 20240040861A1 · Feb 1, 2024
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