Display device
An embodiment of a display device includes: a first display area; a second display area including a transmission area; a third display area between the first display area and the second display area; and a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively. Each of the plurality of pixel circuits includes: a first thin-film transistor including a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer; a second thin-film transistor including a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer; and a bottom shielding layer below the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane.
1. A display device comprising:
a first display area in which a plurality of first light-emitting elements are arranged;
a second display area in which a plurality of second light-emitting elements are arranged, the second display area comprising a transmission area;
a third display area in which a plurality of third light-emitting elements are arranged, the third display area being between the first display area and the second display area; and
a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively,
wherein each of the plurality of pixel circuits comprises:
a first thin-film transistor comprising a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer;
a second thin-film transistor comprising a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer;
a bottom shielding layer below the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane; and
a wiring layer including a same material as that of the second gate electrode of the second thin-film transistor,
wherein the wiring layer is electrically connected to the bottom shielding layer through a contact hole in the third display area.
2. The display device of claim 1 , wherein the first semiconductor layer of the first thin-film transistor includes a silicon semiconductor material, and the second semiconductor layer of the second thin-film transistor includes an oxide semiconductor material.
3. The display device of claim 1 , wherein the bottom shielding layer includes a same material as that of the first gate electrode of the first thin-film transistor.
4. The display device of claim 1 , wherein the bottom shielding layer includes a same material as that of the first semiconductor layer of the first thin-film transistor.
5. The display device of claim 1 , further comprising a bottom metal layer below the first semiconductor layer of the first thin-film transistor and overlapping the first semiconductor layer on a plane.
6. The display device of claim 1 , further comprising a light shielding portion in the third display area and comprising at least two conductive layers.
7. The display device of claim 6 , wherein the light shielding portion is closer to the second display area than the plurality of pixel circuits on a plane.
8. The display device of claim 6 , wherein the light shielding portion is arranged to surround at least a portion of the second display area on a plane.
9. The display device of claim 6 , wherein the at least two conductive layers of the light shielding portion comprise:
a first conductive layer including a same material as that of the first gate electrode or the second gate electrode; and
a second conductive layer on the first conductive layer and electrically connected to the first conductive layer.
10. The display device of claim 1 , wherein each of the plurality of third light-emitting elements comprises a pixel electrode, an opposite electrode above the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode, and
the pixel electrode overlaps the second thin-film transistor of each of the plurality of pixel circuits on a plane.
11. A display device comprising:
a first display area in which a plurality of first light-emitting elements are arranged;
a second display area in which a plurality of second light-emitting elements are arranged, the second display area comprising a transmission area;
a third display area in which a plurality of third light-emitting elements are arranged, the third display area being between the first display area and the second display area; and
a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively,
wherein each of the plurality of pixel circuits comprises:
a first thin-film transistor comprising a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer;
a second thin-film transistor comprising a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer; and
a bottom shielding layer below the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane,
wherein each of the plurality of pixel circuits further comprises a capacitor electrode overlapping at least a portion of the first gate electrode of the first thin-film transistor, and
the bottom shielding layer includes a same material as that of the capacitor electrode.
12. A display device comprising:
a first display area in which a plurality of first light-emitting elements are arranged;
a second display area in which a plurality of second light-emitting elements are arranged, the second display area comprising a transmission area;
a third display area in which a plurality of third light-emitting elements are arranged, the third display area being between the first display area and the second display area; and
a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively,
wherein each of the plurality of pixel circuits comprises:
a first thin-film transistor comprising a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer;
a second thin-film transistor comprising a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer;
a light shielding portion in the third display area and comprising a plurality of conductive layers; and
a bottom metal layer below the first semiconductor layer of the first thin-film transistor and overlapping the first semiconductor layer on a plane,
wherein the plurality of conductive layers of the light shielding portion comprises:
a first conductive layer including a same material as that of the first gate electrode or the second gate electrode;
a second conductive layer on the first conductive layer and electrically connected to the first conductive layer, and
a third conductive layer including a same material as that of the bottom metal layer and electrically connected to the first conductive layer.
13. A display device comprising:
a substrate comprising a first area, a second area, and a third area between the first area and the second area;
a first semiconductor layer on the substrate in the third area and including a silicon semiconductor material;
a first insulating layer covering the first semiconductor layer;
a first gate electrode on the first insulating layer and overlapping at least a portion of the first semiconductor layer;
a second insulating layer covering the first gate electrode;
a second semiconductor layer on the second insulating layer in the third area and including an oxide semiconductor material;
a third insulating layer covering the second semiconductor layer;
a second gate electrode on the third insulating layer and overlapping at least a portion of the second semiconductor layer;
a bottom shielding layer between the substrate and the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane; and
a wiring layer on the third insulating layer and including a same material as that of the second gate electrode,
wherein each of the first to third insulating layers comprises a hole overlapping a portion of the second area, and
the bottom shielding layer is electrically connected to the wiring layer through a contact hole in the third area.
14. The display device of claim 13 , wherein the bottom shielding layer includes a same material as that of the first gate electrode or the first semiconductor layer.
15. The display device of claim 13 , further comprising a bottom metal layer between the substrate and the first semiconductor layer and overlapping the first semiconductor layer on a plane.
16. The display device of claim 13 , further comprising:
a fourth insulating layer covering the second gate electrode; and
a light shielding portion in the third area,
wherein the light shielding portion comprises:
a first conductive layer on a same layer as the first gate electrode or the second gate electrode; and
a second conductive layer on the fourth insulating layer and having a portion electrically connected to the first conductive layer through a contact hole in the fourth insulating layer.
17. The display device of claim 16 , wherein the light shielding portion is closer to the second area than a region of the third area in which the second semiconductor layer is arranged, on a plane.
18. The display device of claim 16 , wherein the light shielding portion is arranged to surround at least a portion of the second area on a plane.