Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic
First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.
1. A method of forming a static random access memory (SRAM) region, the method comprising:
providing (i) a first set of mandrels corresponding to a first lithography process and (ii) a second set of mandrels corresponding to a second lithography process, wherein a first mandrel of the first set of mandrels is adjacent to a first mandrel of the second set of mandrels;
forming spacers on the first and second sets of mandrels within approximately a same time interval during which a spacer layer deposition and etch process occurs; and
removing the first and second sets of mandrels to form an intermediate SRAM fin pattern, the intermediate SRAM fin pattern comprising:
first and second intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the first set of mandrels; and
third and fourth intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the second set of mandrels, wherein the second and third intermediate SRAM fins are adjacent intermediate SRAM fins,
wherein a pitch between the third and fourth intermediate SRAM fins corresponds to a width of the first mandrel of the second set of mandrels plus a width of a spacer, and
wherein a pitch between the second and third intermediate SRAM fins corresponds to a width of a space between the first mandrel of the first set of mandrels and the first mandrel of the second set of mandrels minus the width of a spacer.
2. The method of claim 1 , further comprising etching to transfer the intermediate SRAM fin pattern into a substrate to form first, second, third, and fourth active SRAM fins.
3. The method of claim 2 , wherein forming the first, second, third, and fourth active SRAM fins involves only one spacer layer deposition and etch.
4. The method of claim 2 , further comprising removing a portion of the third active SRAM fin.
5. The method of claim 2 , further comprising removing a portion of the second and third active SRAM fins.
6. The method of claim 2 , wherein a centerline spacing of the second and third active SRAM fins is approximately 48 nm.
7. The method of claim 2 , wherein a centerline spacing of the third and fourth active SRAM fins is approximately 56 nm.
8. The method of claim 1 , wherein the first set of mandrels comprises a second mandrel of the first set of mandrels, the method further comprising:
forming fifth and sixth intermediate SRAM fins corresponding to spacers on opposing sidewalls of the second mandrel of the first set of mandrels,
wherein the third and fourth intermediate SRAM fins are between (i) the first and second intermediate SRAM fins and (ii) the fifth and sixth intermediate SRAM fins, and
wherein the intermediate SRAM fin pattern further comprises the fifth and sixth intermediate SRAM fins.
9. The method of claim 8 , further comprising etching to transfer the intermediate SRAM fin pattern into a substrate to form first, second, third, fourth, fifth, and sixth active SRAM fins.
10. The method of claim 9 , wherein forming the first, second, third, fourth, fifth, and sixth active SRAM fins involves only one spacer layer deposition and etch.
11. A method of forming a static random access memory (SRAM) region, the method comprising:
providing (i) a first set of mandrels corresponding to a first lithography process and (ii) a second set of mandrels corresponding to a second lithography process, wherein a first mandrel of the first set of mandrels is adjacent to a first mandrel of the second set of mandrels, and wherein the first and second set of mandrels are interleaved;
forming spacers on the first and second sets of mandrels within approximately a same time interval during which a spacer layer deposition and etch process occurs; and
removing the first and second sets of mandrels to form an intermediate SRAM fin pattern, the intermediate SRAM fin pattern comprising:
first and second intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the first set of mandrels; and
third and fourth intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the second set of mandrels, wherein the second and third intermediate SRAM fins are adjacent intermediate SRAM fins,
wherein a pitch between the third and fourth intermediate SRAM fins corresponds to a width of the first mandrel of the second set of mandrels plus a width of a spacer, and
wherein a pitch between the second and third intermediate SRAM fins corresponds to a width of a space between the first mandrel of the first set of mandrels and the first mandrel of the second set of mandrels minus the width of a spacer.
12. The method of claim 11 , further comprising etching to transfer the intermediate SRAM fin pattern into a substrate to form first, second, third, and fourth active SRAM fins.
13. The method of claim 12 , wherein forming the first, second, third and fourth active SRAM fins involves only one spacer layer deposition and etch.
14. The method of claim 12 , further comprising removing a portion of the third active SRAM fin.
15. The method of claim 12 , further comprising removing a portion of the second and third active SRAM fins.
16. The method of claim 11 , wherein the first set of mandrels comprises a second mandrel of the first set of mandrels, and wherein the second set of mandrels comprises a second mandrel of the second set of mandrels, the method further comprising:
forming fifth and sixth intermediate SRAM fins corresponding to spacers on opposing sidewalls of the second mandrel of the first set of mandrels; and
forming a seventh and an eighth intermediate SRAM fin corresponding to spacers on opposing sidewalls of the second mandrel of the second set of mandrels,
wherein the third and fourth intermediate SRAM fins are between (i) the first and second intermediate SRAM fins and (ii) the fifth and sixth intermediate SRAM fins,
wherein the fifth and sixth intermediate SRAM fins are between (i) the third and fourth intermediate SRAM fins and (ii) the seventh and eighth intermediate SRAM fins,
wherein the sixth intermediate SRAM fin is adjacent to the seventh intermediate SRAM fin, and
wherein the intermediate SRAM fin pattern further comprises the fifth, sixth, seventh, and eighth intermediate SRAM fins.
17. The method of claim 16 , further comprising etching to transfer the intermediate SRAM fin pattern into a substrate to form first, second, third, fourth, fifth, sixth, seventh, and eighth active SRAM fins.
18. The method of claim 17 , wherein forming the first, second, third, fourth, fifth, sixth, seventh, and eighth active SRAM fins involves only one spacer layer deposition and etch.
19. The method of claim 16 , wherein:
a pitch between the seventh and eighth intermediate SRAM fins corresponds to a width of the second mandrel of the second set of mandrels plus the width of a spacer; and
a pitch between the sixth and seventh intermediate SRAM fins corresponds to a width of the space between the second mandrel of the first set of mandrels and the second mandrel of the second set of mandrels minus the width of a spacer.
20. The method of claim 16 , wherein the pitch between the first and second mandrels of the first set of mandrels is equal to the pitch between the first and second mandrels of the second set of mandrels.