IP Library › Granted Patent US 11,657,860
Granted Patent B2
US 11,657,860 · App. 17/361,780 · Granted May 23, 2023

Memory package and storage device including the same

Inventors: Joohwan Kim (Suwon-si, KR); Jindo Byun (Suwon-si, KR); Younghoon Son (Yongin-si, KR); Youngdon Choi (Seoul, KR); Junghwan Choi (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C7/1084G06F3/0656G06F3/0679G11C7/222
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Quick Facts
Patent No.
US 11,657,860
App. No.
17/361,780
Granted
May 23, 2023
Kind
B2
Abstract

A memory package includes a package substrate including a redistribution layer and bonding pads connected to the redistribution layer, the redistribution layer including a plurality of signal paths; a buffer chip mounted on the package substrate and including a plurality of chip pads corresponding to a plurality of memory channels; and a plurality of memory chips stacked on the package substrate and divided into a plurality of groups corresponding to the plurality of memory channels, wherein memory chips of a first group, among the plurality of memory chips, are connected to first chip pads of the plurality of chip pads through first wires, and wherein memory chips of a second group, among the plurality of memory chips, are connected to second chip pads of the plurality of chip pads through second wires and at least a portion of the plurality of signal paths.

Claims (51)

1. A memory package, comprising:

a package substrate including a plurality of redistribution layers and bonding pads connected to the plurality of redistribution layers, the plurality of redistribution layers including at least a first and second redistribution layer, each of the plurality of redistribution layers including a plurality of signal paths;

a buffer chip mounted on the package substrate and including a plurality of chip pads corresponding to a plurality of memory channels, the buffer chip configured to receive a control command from an external device controller through at least a portion of the plurality of signal paths of the first redistribution layer; and

a plurality of memory chips stacked on the package substrate and divided into a plurality of groups corresponding to the plurality of memory channels,

wherein memory chips of a first group, among the plurality of memory chips, are connected to first chip pads of the plurality of chip pads through first wires, and

wherein memory chips of a second group, among the plurality of memory chips, are connected to second chip pads of the plurality of chip pads through second wires and at least a portion of the plurality of signal paths of the second redistribution layer.

2. The memory package of claim 1 , wherein the buffer chip is configured to transmit a control command received from an external device controller to two or more groups corresponding to two or more of the plurality of memory channels.

3. The memory package of claim 1 , wherein memory chips of a third group, among the plurality of memory chips, are connected to third chip pads of the plurality of chip pads through third wires.

4. The memory package of claim 3 , wherein memory chips of a fourth group, among the plurality of memory chips, are connected to fourth chip pads of the plurality of chip pads through fourth wires and another portion of the plurality of signal paths, different than the at least one portion of the plurality of signal paths.

5. The memory package of claim 1 , wherein a number of the memory chips of the first group is the same as a number of the memory chips of the second group.

6. The memory package of claim 1 , wherein the memory chips of the first group and the memory chips of the second group are disposed in different positions in a direction parallel to an upper surface of the package substrate.

7. The memory package of claim 6 , wherein the memory chips of the first group and the memory chips of the second group are disposed at the same level in a direction perpendicular to the upper surface of the package substrate.

8. The memory package of claim 1 , wherein the memory chips of the first group are connected to each other by through wirings, and the through wirings are connected to the first wires.

9. The memory package of claim 1 , wherein the buffer chip includes a plurality of transmitters and a plurality of receivers connected to the plurality of chip pads, and each of the plurality of chip pads is connected to one of the plurality of transmitters and one of the plurality of receivers.

10. The memory package of claim 9 ,

wherein the buffer chip includes a selection circuit for selecting at least one of the plurality of chip pads, and

wherein the buffer chip is configured to activate the transmitter and the receiver connected to a chip pad selected by the selection circuit among the plurality of chip pads, and to deactivate the transmitter and the receiver connected to chip pads not selected by the selection circuit.

11. The memory package of claim 1 ,

wherein the plurality of chip pads include upper chip pads disposed on an upper surface of the buffer chip, and lower chip pads disposed on a lower surface of the buffer chip, and

wherein the upper chip pads include the first chip pads.

12. The memory package of claim 11 , wherein the lower chip pads include the second chip pads, and the second chip pads are directly connected to the at least a portion of the plurality of signal paths.

13. The memory package of claim 11 ,

wherein memory chips of a third group, among the plurality of memory chips, are disposed between the memory chips of the second group and the package substrate, and

wherein the memory chips of the third group are connected to third chip pads included in the lower chip pads through the other portion of the plurality of signal paths.

14. A storage device, comprising:

a system substrate;

device controller circuitry mounted on the system substrate; and

a plurality of memory packages mounted on the system substrate and configured to operate in response to a control command received from the device controller circuitry,

wherein each of the plurality of memory packages includes a package substrate connected to the system substrate, a single buffer chip mounted on the package substrate, and a plurality of memory chips connected to the buffer chip through the plurality of memory channels, the package substrate including a plurality of redistribution layers and bonding pads connected to the plurality of redistribution layers, the plurality of redistribution layers including at least a first and second redistribution layer, each of the plurality of redistribution layers including a plurality of signal paths, the single buffer chip configured to receive the control command from the device controller circuitry through at least a portion of the plurality of signal paths of the first redistribution layer and out the control command to at least one of a plurality of channels, and the plurality of memory chips connected to the buffer chip through the plurality of memory channels,

wherein memory chips of a first group, among the plurality of memory chips, are electrically connected to the buffer chip through first wires, and

wherein memory chips of a second group, among the plurality of memory chips, are electrically connected to the buffer chip through second wires and the second redistribution layer.

15. The memory package of claim 14 ,

wherein the buffer chip includes a plurality of chip pads, and the plurality of chip pads include upper chip pads disposed on an upper surface of the buffer chip, and lower chip pads disposed on a lower surface of the buffer chip,

wherein the upper chip pads are electrically connected to the memory chips of the first group through the first wires, and

wherein the lower chip pads are electrically connected to the memory chips of the second group through the second wires and the second redistribution layer.

16. The memory package of claim 14 ,

wherein the memory chips of the first group are connected to each other by the first wires, and

wherein the memory chips of the second group are connected to each other by the second wires.

17. The memory package of claim 14 , wherein the memory chips of the first group are connected to each other through first through silicon vias, and the memory chips of the second group are connected to each other through second through silicon vias.

18. The memory package of claim 14 , wherein the buffer chip includes a selection circuit configured to activate at least one of the plurality of channels and to output the control command to at least one of the memory chips.

19. The memory package of claim 14 ,

wherein each of the plurality of memory packages is mounted on the system substrate through a plurality of package bumps formed on a lower surface of the package substrate, and

wherein the package bumps and the plurality of redistribution layers are electrically isolated from each other.

20. A storage device, comprising:

a system substrate including a plurality of redistribution layers, the plurality of redistribution layers including at least a first and second redistribution layer, each of the plurality of redistribution layers including a plurality of channels,

device controller circuitry mounted on the system substrate; and

a plurality of memory packages mounted on the system substrate and configured to operate in response to a control command received from the device controller circuitry,

wherein each of the memory packages includes a package substrate connected to the system substrate and including a plurality of bonding pads, and a plurality of memory chips mounted on the package substrate,

wherein a first memory package of the memory packages includes a buffer chip connected to the memory chips through a plurality of channels and transmitting the control command received from the device controller circuitry to the memory chips through at least one of the channels of the first redistribution layer,

wherein the buffer chip includes a plurality of chip pads, and

wherein at least one of the chip pads is connected to the memory chips of a second memory package which does not include the buffer chip among the memory packages through wires and at least a portion of the channels of the second redistribution layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2021
From: KIM, JOOHWAN; BYUN, JINDO; SON, YOUNGHOON; CHOI, YOUNGDON; CHOI, JUNGHWAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 056761/0343 →
Priority Claims (1)
KR 10-2020-0152800 · Nov 16, 2020 · national
Continuity (1)
Related Publication 20220157353A1 · May 19, 2022
Cited By (1)
US 12,253,953