Time-dependent defect inspection apparatus
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.
1. A non-transitory computer readable medium storing a set of instructions that is executable by one or more processors of a charged particle beam system to cause the charged particle beam system, with a charged particle beam source to direct charged particles onto a wafer, to perform a method comprising:
controlling a time interval to produce each image of a first set of images of a first area of the wafer during a first time sequence; and
processing the first set of images to detect a defect in the wafer.
2. The computer readable medium of claim 1 , wherein the set of instructions that is executable by the one or more processors of the charged particle beam system to cause the charged particle beam system to further perform:
sampling a first image and a second image from the first set of images, wherein the first image is sampled at a first time and the second image is sampled at a second time; and
comparing the first image to the second image to identify the defect at the first area of the wafer.
3. The computer readable medium of claim 2 , wherein the first image and the second image comprise voltage contrast levels.
4. The computer readable medium of claim 3 , wherein the set of instructions that is executable by the one or more processors of the charged particle beam system to cause the charged particle beam system to further perform:
detecting a difference between the voltage contrast levels of the first image and the voltage contrast levels of the second image to identify a defect in the wafer.
5. The computer readable medium of claim 1 , wherein the set of instructions that is executable by the one or more processors of the charged particle beam system to cause the charged particle beam system to further perform:
producing a second set of images of the first area during a second time sequence;
sampling a first image from the first set of images and a second image from the second set of images; and
comparing the first image to the second image to identify the defect at the first area of the wafer.
6. The computer readable medium of claim 5 , wherein the first image and the second image are sampled at corresponding times of the first time sequence and the second time sequence.
7. The computer readable medium of claim 1 , wherein the set of instructions that is executable by the one or more processors of the charged particle beam system to cause the charged particle beam system to further perform:
producing a second set of images of a second area of the wafer during a second time sequence, wherein the first area and the second area comprise same device structures;
sampling a first image from the first set of images and a second image from the second set of images; and
comparing the first image to the second image to identify the defect at the first area or the second area of the wafer.
8. The computer readable medium of claim 5 , wherein the set of instructions that is executable by the one or more processors of the charged particle beam system to cause the charged particle beam system to further perform:
controlling a time interval between each image of the second set of images.
9. A method of inspecting a wafer using a charged particle beam system with a charged particle beam source to direct charged particles onto a wafer, the method comprising:
controlling a time interval to produce each image of a first set of images of a first area during a first time sequence; and
processing the first set of images to detect a defect in the wafer.
10. The method of claim 9 , further comprising:
sampling a first image and a second image from the first set of images, wherein the first image is sampled at a first time and the second image is sampled at a second time; and
comparing the first image to the second image to identify the defect at the first area of the wafer.
11. The method of claim 10 , wherein the first image and the second image comprise voltage contrast levels.
12. The method of claim 11 , further comprising detecting a difference between the voltage contrast levels of the first image and the voltage contrast levels of the second image to identify a defect in the wafer.
13. The method of claim 9 , further comprising:
producing a second set of images of the first area during a second time sequence;
sampling a first image from the first set of images and a second image from the second set of images; and
comparing the first image to the second image to identify the defect at the first area of the wafer.
14. The method of claim 13 , the first image and the second image are sampled at corresponding times of the first time sequence and the second time sequence.
15. The method of claim 9 , further comprising:
producing a second set of images of a second area of the wafer during a second time sequence, wherein the first area and the second area comprise same device structures;
sampling a first image from the first set of images and a second image from the second set of images; and
comparing the first image to the second image to identify the defect at the first area or the second area of the wafer.
16. The method of claim 15 , further comprising controlling a time interval between each image of the second set of images.