Decoders for analog neural memory in deep learning artificial neural network
Numerous embodiments of decoders for use with a vector-by-matrix multiplication (VMM) array in an artificial neural network are disclosed. The decoders include bit line decoders, word line decoders, control gate decoders, source line decoders, and erase gate decoders. In certain embodiments, a high voltage version and a low voltage version of a decoder is used.
1. A system comprising:
a vector-by-matrix multiplication array comprising an array of non-volatile memory cells organized into rows and columns, wherein respective ones of the columns are connected to a respective bit line and
a bit line decoder circuit coupled to the respective bit lines, the bit line decoder comprising:
a first column decoder for enabling an individual bit line during a program-and-verify operation of a non-volatile memory cell coupled to the individual bit line; and
a second column decoder for enabling a plurality of bit lines during an analog neuromorphic neuron read operation.
2. The system of claim 1 , wherein the second column decoder comprises a plurality of select transistors and a plurality of activation function circuits respectively coupled to the plurality of bit lines.
3. The system of claim 2 , wherein gates of the plurality of select transistors are coupled to the same control line.
4. The system of claim 1 , wherein a negative bias is applied to word lines coupled respectively to rows containing unselected memory cells during the program-and-verify operation or a read operation of the non-volatile memory cell coupled to the individual bit line.
5. The system of claim 1 , wherein the non-volatile memory cells are split-gate flash memory cells.
6. The system of claim 1 , wherein the non-volatile memory cells are stacked-gate flash memory cells.
7. The system of claim 1 , wherein the non-volatile memory cells are configured to operate in a sub-threshold region.
8. The system of claim 1 , wherein the non-volatile memory cells are configured to operate in a linear region.
9. The system of claim 2 , wherein a negative bias is applied to gates of select transistors coupled to non-enabled bit lines during the program-and-verify operation or a read operation.
10. A system comprising:
a vector-by-matrix multiplication array comprising an array of non-volatile memory cells organized into rows and columns, wherein respective ones of the columns are connected to a respective bit line; and
a bitline decoder circuit, wherein the bitline decoder circuit enables an individual bit line in the vector-by-matrix multiplication array during a program-and-verify operation and enables a plurality of bit lines in the vector-by-matrix multiplication array during an analog neuromorphic neuron read operation.
11. The system of claim 10 , wherein the bitline decoder circuit comprises a plurality of select transistors and a plurality of activation function circuits coupled to the plurality of bit lines.
12. The system of claim 10 , wherein a negative bias is applied to word lines coupled respectively to rows containing unselected memory cells during the program-and-verify operation or a read operation.
13. The system of claim 10 , wherein the non-volatile memory cells are split-gate flash memory cells.
14. The system of claim 10 , wherein the non-volatile memory cells are stacked-gate flash memory cells.
15. The system of claim 10 , wherein the non-volatile memory cells are configured to operate in a sub-threshold region.
16. The system of claim 10 , wherein the non-volatile memory cells are configured to operate in a linear region.
17. The system of claim 11 , wherein a negative bias is applied to gates of select transistors coupled to respective non-enabled bit lines during the program-and-verify operation or a read operation.