Metal oxide and field-effect transistor
View Patent ↗To provide a novel material. In a field-effect transistor including a metal oxide, a channel formation region of the transistor includes a material having at least two different energy band widths. The material includes nano-size particles each with a size of greater than or equal to 0.5 nm and less than or equal to 10 nm. The nano-size particles are dispersed or distributed in a mosaic pattern.
1. A semiconductor device comprising:
a transistor comprising a channel formation region in a metal oxide,
wherein the channel formation region comprises a material having at least two different energy band widths,
wherein the material comprises nano-size particles each with a size of greater than or equal to 0.5 nm and less than or equal to 10 nm,
wherein a first nano-size particle of the nano-size particles comprises In,
wherein a second nano-size particle of the nano-size particles comprises Ga, and
wherein the first nano-size particle and the second nano-size particle are randomly and unevenly distributed.
2. The semiconductor device according to claim 1 ,
wherein a boundary between the first nano-size particle and the second nano-size particle is not clear, and
wherein the first nano-size particle and the second nano-size particle are mixed in a cloud-like manner.
3. The semiconductor device according to claim 1 ,
wherein an energy band width of the first nano-size particle is larger than an energy band width of the second nano-size particle.
4. The semiconductor device according to claim 1 ,
wherein the second nano-size particle further comprises at least one of In, Zn, and Sn.