Semiconductor structure and method for forming the same
A method includes forming a plurality of first conductive vias over a redistribution layer (RDL); disposing a first die over the RDL and adjacent to the first vias; and forming a plurality of second conductive vias over and electrically connected to the first conductive vias, each of the second conductive vias corresponding to one of the first conductive vias. The method further includes forming a plurality of third conductive vias over the first die; disposing a second die over the first die and adjacent to the third conductive vias; and encapsulating the first die, the second die, the first conductive vias, the second conductive vias and the third conductive vias with a molding material.
1. A method, comprising:
forming a plurality of first conductive vias over a redistribution layer (RDL);
disposing a first die over the RDL and adjacent to the plurality of first conductive vias;
forming a plurality of second conductive vias over and electrically connected to the plurality of first conductive vias, each of the plurality of second conductive vias corresponding to one of the plurality of first conductive vias;
forming a plurality of third conductive vias over the first die, wherein when the plurality of third conductive vias are formed, the plurality of first conductive vias are exposed;
disposing a second die over the first die and adjacent to the plurality of third conductive vias; and
encapsulating the first die, the second die, the plurality of first conductive vias, the plurality of second conductive vias and the plurality of third conductive vias.
2. The method of claim 1 , wherein a width of each of the plurality of first conductive vias is substantially equal to or greater than the corresponding one of the plurality of second conductive vias.
3. The method of claim 1 , wherein the first die, the second die, the plurality of first conductive vias, the plurality of second conductive vias and the plurality of third conductive vias are encapsulated during a same encapsulating operation.
4. The method of claim 1 , wherein a distance between adjacent of the plurality of first conductive vias is substantially equal to or greater than a distance between adjacent of the plurality of second conductive vias.
5. The method of claim 1 , wherein forming of the plurality of second conductive vias and the forming of plurality of third conductive vias are performed during a same operation.
6. The method of claim 1 , wherein forming of the plurality of second conductive vias includes forming a step between the plurality of second conductive vias and the plurality of first conductive vias.
7. The method of claim 1 , further comprising:
receiving a first substrate;
forming a first conductive pad over the first substrate;
depositing a first passivation layer over the first conductive pad;
thinning the first substrate;
disposing a die attach film to the first substrate on a side of the first substrate opposite to the conductive pad; and
singulating the first substrate to form the first die.
8. The method of claim 7 , further comprising:
forming a plurality of die connectors over the first passivation layer and electrically connected to the first conductive pad.
9. The method of claim 8 , wherein the plurality of third conductive vias are electrically coupled to the plurality of die connectors.
10. A method, comprising:
forming a plurality of first conductive vias over a first redistribution layer (RDL);
disposing a first die over the first RDL and adjacent to the plurality of first conductive vias;
forming a plurality of second conductive vias over and corresponding to the plurality of first conductive vias, a trench being formed in each of adjacent pairs of the plurality of first conductive vias through an upper surface of the first RDL to an upper surface of each of the plurality of second conductive vias;
forming a plurality of third conductive vias over the first die;
disposing a second die over the first die and adjacent to the plurality of third conductive vias;
dispensing a molding material to fill the trench and over the plurality of second conductive vias; and
curing the molding material to encapsulate the first die, the second die, the plurality of first conductive vias and the plurality of second conductive vias.
11. The method of claim 10 , wherein a height of each of the plurality of first conductive vias is substantially equal to a thickness of the first die.
12. The method of claim 10 , wherein a thickness of the second die is substantially equal to a height of the plurality of third conductive vias.
13. The method of claim 10 , wherein a height of each of the plurality of second conductive vias is substantially equal to a height of the plurality of third conductive vias.
14. The method of claim 10 , wherein the plurality of third conductive vias are formed to electrically couple the first die to the plurality of third conductive vias.
15. The method of claim 10 , further comprising:
removing a portion of the molding material to expose the second die, the plurality of second conductive vias and the plurality of third conductive vias; and
forming a second RDL over the second die, the plurality of second conductive vias, and the plurality of third conductive vias.
16. A method of manufacturing a semiconductor structure, comprising:
forming a plurality of first conductive vias over a first redistribution layer (RDL);
disposing a first die over the first RDL and adjacent to the plurality of first conductive vias;
forming a plurality of second conductive vias over and corresponding to the plurality of first conductive vias, wherein a stepped shape is formed around an interface between each of the plurality of first conductive vias and corresponding one of the plurality of second conductive vias;
forming a plurality of third conductive vias over the first die;
disposing a second die over the first die and adjacent to the plurality of third conductive vias; and
dispensing a molding material to encapsulate the first die, the second die, the plurality of first conductive vias, the plurality of second conductive vias and the plurality of third conductive vias, wherein the dispensing causes the molding material to flow in a space between the plurality of the second conductive vias and a space between the first die and the adjacent one of the plurality of first conductive vias.
17. The method of claim 16 , Wherein formation of the plurality of second conductive vias and formation of the plurality of third conductive vias are performed during a same operation.
18. The method of claim 16 , wherein top surfaces of the plurality of first conductive vias are level with a top surface of the first die.
19. The method of claim 16 , wherein a top surface of the second die is level with top surfaces of the plurality of second conductive vias or top surfaces of the plurality of third conductive vias.
20. The method of claim 16 , wherein a width of each of the plurality of first conductive vias is substantially equal to or greater than the corresponding one of the plurality of second conductive vias.